MT41K128M16JT-125:K vs K4B4G1646E-BYK000 Comparación
Comparación detallada lado a lado de MT41K128M16JT-125:K por Micron Technology y K4B4G1646E-BYK000 por Samsung Electronics. Compare las especificaciones clave, los parámetros eléctricos, el encapsulado, el estado del ciclo de vida, los precios y la disponibilidad para determinar el mejor componente para los requisitos de su diseño.
Micron Technology
MT41K128M16JT-125:K - 2Gb DDR3L SDRAM 1600MT/s | Micron Technology
MT41K128M16JT-125:K ✓ ActivoSamsung Electronics
K4B4G1646E-BYK000 - 4Gb DDR3L SDRAM 256Mx16 | Samsung
K4B4G1646E-BYK000 ✓ ActivoComparación de especificaciones
| Parámetro | MT41K128M16JT-125:K | K4B4G1646E-BYK000 |
|---|---|---|
| Marca | Micron Technology | Samsung Electronics |
| Categoría | Memory ICs | Memory ICs |
| Estado del ciclo de vida | Activo | Activo |
| Estado del stock | In Stock | In Stock |
| Precio unitario (USD) | $9,75 | $0,56 |
| Tipo de memoria | DDR3L SDRAM | DDR3L SDRAM |
| Memory Capacity | 2 Gbit | — |
| Organización de memoria | 128M x 16 | 256M x 16 |
| Interfaz | Parallel | Parallel |
| Clock Frequency | 800 MHz (1600 MT/s data rate) | 800 MHz |
| Access Time (Clock Cycle) | 13.75 ns | — |
| Supply Voltage (VDD) | 1.35 V (1.283 V to 1.45 V) | 1.35 V (DDR3L), 1.5 V compatible (DDR3) |
| Prefetch Architecture | 8n-bit | — |
| Encapsulado | 96-FBGA (8x14 mm) | 96-FBGA (BYK) |
| Tipo de montaje | Surface Mount | Surface Mount |
| Temperatura de funcionamiento | 0C to +95C | [DATA_NEEDED: operating temperature range] |
| Self Refresh | Auto self-refresh | — |
| Write Leveling | Supported | — |
| Data Mask | Supported | — |
| On-Die Termination | Dynamic ODT supported | — |
| Asynchronous Reset | Supported | — |
| Estado RoHS | Compliant | [DATA_NEEDED: RoHS status] |
| Tamaño de memoria | — | 4 Gbit |
| Speed Grade | — | DDR3-1600 (1.25 ns clock cycle) |
| CAS Latency (CL) | — | [DATA_NEEDED: CAS latency - 1.25 ns CL grade indicates CL11 but not explicitly stated in provided data] |
| Number of Banks | — | [DATA_NEEDED: bank count] |
| Die Process | — | Samsung E-die |
| Características | — | Auto precharge, asynchronous reset, ZQ calibration, dynamic on-chip termination, data mask |
| Access Time | — | 1.25 ns |