MT53E256M32D2DS-046 - 8Gb LPDDR4 SDRAM | Micron Technology
N.º de pieza: MT53E256M32D2DS-046 ✓ Activo| Cant. | Precio unitario | Total |
|---|---|---|
| 1 | $12.5 | $12,50 |
| 10 | $11.4 | $114,00 |
| 100 | $10.6 | $1.060,00 |
| 500 | $9.8 | $4.900,00 |
| 1.000 | $9.1 | $9.100,00 |
MT53E256M32D2DS-046 Descripción general
LPDDR4 (Low Power Double Data Rate 4) is a JEDEC-defined DRAM standard optimized for mobile and battery-powered systems. In the memory hierarchy, LPDDR4 sits below DDR4/DDR5 server DRAM in terms of raw bandwidth density but offers significantly lower standby and self-refresh power, making it the dominant main-memory technology for smartphones, tablets, automotive infotainment, and edge AI modules.
Key features of this part include 8Gb density in a single-die configuration, an x32 wide I/O organization that simplifies controller routing, and a -046 speed bin supporting the highest LPDDR4 clock rates. The D2DS suffix denotes the Micron LPDDR4/LPDDR4X unified die generation, which also supports LPDDR4X 0.6V VDDQ operation per the unified datasheet, reducing I/O power in compatible systems.
Architecturally, the device uses a 32-bit interface with bank groups to enable concurrent access, dual 16-bit channels, and standard LPDDR4 commands (ACTIVATE, READ/WRITE bursts, REFRESH, self-refresh with automatic exit). Automotive (AUT:B), industrial (IT:B), and commercial (WT:B, AAT:B) temperature grades share the same silicon and package footprint, allowing single-board designs across market segments.
Typical applications include automotive infotainment and ADAS processors (QNX, Android Automotive platforms), embedded vision modules, industrial gateways, and high-resolution display systems requiring gigabyte-class frame buffers.
When designing with this device, ensure the memory controller supports LPDDR4 gear-down mode selection, proper on-die termination (ODT) settings, and VDDQ termination compliance for signal integrity at 4266 MT/s.
This page synthesizes distributor pricing, drop-in grade alternatives, and practical layout/design notes not consolidated in the manufacturer datasheet.
Alternativas directas para MT53E256M32D2DS-046 — mismo encapsulado, compatible pin a pin. Se excluyen las piezas de otro encapsulado que requieren retrabajo de la PCB.
Variantes de esta serie
Modelos de la misma serie compatibles directamente con MT53E256M32D2DS-046 (mismo factor de forma y huella) — difiere en Density, Memory Type, Package, Organization, Mounting Type.
Herramienta de comparación rápida — seleccione piezas alternativas para compararlas lado a lado:
MT53E256M32D2DS-046 AUT:B
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MT53E256M32D2DS-046 IT:B
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MT53E256M32D2DS-046 AAT:B
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MT53E256M32D2DS-046 WT:B
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MT53E128M32D2DS-046
✅ Sustitución directa✓ En stock
Consulte el precio
Ver hoja de datos →MT53D512M32D2DS-046
✅ Sustitución directa✓ En stock
$61.75 / unidad
Ver hoja de datos →MT53E256M32D2DS-046 Valores máximos y características eléctricas
| Tipo de memoria | LPDDR4 SDRAM (Mobile DRAM) |
| Density | 8 Gbit |
| Organización de memoria | 256M x 32 |
| Clock Frequency | 2133 MHz |
| Core Supply Voltage (VDD) | 1.1 V |
| Encapsulado | 200-WFBGA (10 x 14.5 mm) |
| Tipo de montaje | Surface Mount |
| Speed Grade | -046 |
| Product Generation | MT53E (LPDDR4/LPDDR4X unified die, supports 0.6V VDDQ LPDDR4X operation) |
| Automotive Qualification (AUT grade variant) | AEC-Q100 qualified (AUT:B variant) |
| Packaging (TR suffix) | Tape & Reel (TR) or Tray |
Guía de configuración de pines de MT53E256M32D2DS-046 200-wfbga (10 x 14.5 mm)
Configuración de pines para MT53E256M32D2DS-046 (encapsulado 200-wfbga (10 x 14.5 mm)). Este CI digital incluye GPIO, interfaces de comunicación (UART, SPI, I2C) y pines de alimentación. Consulte la hoja de datos del fabricante para conocer las funciones alternativas de los pines y las opciones de configuración. Esencial para el diseño de sistemas embebidos y el diseño de PCB.
No hay datos detallados de patillaje disponibles para MT53E256M32D2DS-046.
Consulte la hoja de datos para ver la configuración completa de patillas.
Aplicaciones típicas
MT53E256M32D2DS-046 es adecuado para 6 aplicacións: Automotive Infotainment, ADAS Camera and Sensor Processing, Industrial Gateways and Edge AI Modules, Mobile and Portable Devices, Networking and Communication Equipment, Display and Vision Systems.
Automotive Infotainment
The AUT:B grade of the MT53E256M32D2DS-046 is AEC-Q100 qualified, making it a primary main-memory choice for automotive infotainment SoCs running Android Automotive or QNX. Its 8Gb density and 2133 MHz x32 interface supply the bandwidth required for multi-display clusters, navigation rendering, and audio/video pipelines. Paired with an automotive PMIC that provides the 1.1V core and sequenced I/O rails, the dual-channel 32-bit organization lets one WFBGA device serve both memory channels of typical cockpit SoCs, simplifying routing on the 200-ball footprint.
Recomendado
ADAS Camera and Sensor Processing
Advanced driver assistance systems buffer high-resolution camera frames in DRAM before vision processing; the MT53E256M32D2DS-046 AUT:B provides 8Gb per x32 device with LPDDR4-class bandwidth at 2133 MHz, enough for surround-view stitching at multi-megapixel frame rates. The MT53E die's LPDDR4X 0.6V VDDQ capability reduces I/O power, lowering thermal load in sealed camera modules. Use the AUT:B grade with automotive PMICs and follow strict length-matched DQS/DQ routing to maintain eye margins at full data rate in high-EMI vehicle environments.
Recomendado
Industrial Gateways and Edge AI Modules
The IT:B industrial grade suits factory gateways, edge inference modules, and IIoT controllers that run Linux on ARM SoCs. The 8Gb x32 configuration delivers gigabyte-class main memory in a compact 10 x 14.5 mm footprint, and the -046 speed bin provides headroom for neural-network accelerator DMA traffic. Because MT53E silicon is the successor to the EOL-prone MT53D family, new industrial designs gain long-term supply continuity. Pair with industrial NOR flash and a wide-input DC-DC module to build a complete, RoHS-oriented edge computing memory subsystem.
Recomendado
Mobile and Portable Devices
LPDDR4 was designed for smartphones and tablets, and the MT53E256M32D2DS-046 WT:B commercial grade delivers the canonical mobile DRAM profile: 1.1V core operation, self-refresh for low standby current, and LPDDR4X 0.6V VDDQ capability for battery-life-critical I/O power reduction. The 256M x32 organization maps directly onto application processors with 32-bit LPDDR4 controllers. Its WFBGA package's low profile suits thin portable hardware, while the dual-channel arrangement enables full-rate burst throughput for UI rendering and media decode workloads.
Recomendado
Networking and Communication Equipment
Edge routers, 5G small-cell units, and network-attached processing cards use LPDDR4 as packet-buffer and control-plane memory. The MT53E256M32D2DS-046's 2133 MHz x32 interface supplies burst bandwidth for deep packet buffers, while 8Gb density accommodates flow tables and firmware working sets. The IT:B grade covers extended ambient conditions typical of telecom cabinets. Designers should reserve ample mid-plane decoupling and use gear-down mode when controller frequency limits make full-rate operation unnecessary, trading bandwidth for timing margin.
Recomendado
Display and Vision Systems
High-resolution displays and embedded vision pipelines require large frame buffers with sustained readout bandwidth. The MT53E256M32D2DS-046 provides 8Gb in a single x32 device, letting one IC hold multiple 4K frames while its 2133 MHz interface keeps up with 60 Hz refresh and concurrent capture. The AAT:B automotive temperature grade covers displays used in vehicles, and industrial IT:B suits digital signage. MT53E silicon's LPDDR4X VDDQ option reduces I/O switching power in always-on signage deployments, cutting enclosure thermal design cost.
Recomendado
Resumen de productos recomendados
Datos de referencia de ingeniería para MT53E256M32D2DS-046 — comparación, orientación de diseño e información de cumplimiento.
Guía de selección
Comparación con alternativas
| Parámetro | Este producto | MT53E256M32D2DS-046 AUT:B | MT53E256M32D2DS-046 IT:B | MT53E256M32D2DS-046 AAT:B | MT53E256M32D2DS-046 WT:B | MT53E128M32D2DS-046 | MT53D512M32D2DS-046 |
|---|---|---|---|---|---|---|---|
| Package | 200-WFBGA (10 x 14.5 mm) | 200-WFBGA (10 x 14.5 mm) - same | 200-WFBGA (10 x 14.5 mm) - same | 200-WFBGA (10 x 14.5 mm) - same | 200-WFBGA (10 x 14.5 mm) - same | 200-WFBGA (10 x 14.5 mm) - same | 200-WFBGA (10 x 14.5 mm) - same |
| Brand | Micron Technology | Micron Technology | Micron Technology | Micron Technology | Micron Technology | Micron Technology | Micron Technology |
| Density | 8 Gbit | 8 Gbit | 8 Gbit | 8 Gbit | 8 Gbit | 4 Gbit | 8 Gbit class (MT53D generation) |
| Organization | 256M x 32 | 256M x 32 | 256M x 32 | 256M x 32 | 256M x 32 | 128M x 32 | 512M x 32 |
| Clock Frequency | 2133 MHz | 2133 MHz | 2133 MHz | 2133 MHz | 2133 MHz | 2133 MHz | 2133 MHz |
| Core Supply (VDD) | 1.1 V | 1.1 V | 1.1 V | 1.1 V | 1.1 V | 1.1 V | 1.1 V |
| Memory Generation | MT53E (LPDDR4/LPDDR4X unified, 0.6V VDDQ capable) | MT53E - same | MT53E - same | MT53E - same | MT53E - same | MT53E - same | MT53D (prior generation, EOL path) |
Diferenciadores clave
- LPDDR4X-capable unified die for lower I/O power (frente a MT53D512M32D2DS-046)
- Automotive AEC-Q100 option on identical footprint (frente a MT53E256M32D2DS-046 IT:B)
- Highest-speed -046 bin at 2133 MHz (frente a MT53D512M32D2DS-053 WT:D)
- Lower-cost 4Gb footprint-identical option exists (frente a MT53E128M32D2DS-046)
Notas de diseño
At the -046 speed bin (2133 MHz clock / full LPDDR4 data rate), DQ/DQS/DM traces must be length-matched within the controller vendor's spec (typically a few mils intra-byte). Maintain 40-50 ohm single-ended impedance on DQ nets and route CA/CK differentially with controlled spacing. Simulate with IBIS models from Micron's product page before tape-out; the 200-WFBGA (10 x 14.5 mm) ball-out concentrates DQ buses on package edges, so plan layer transitions early.
Provide separate 1.1V VDD core and I/O (VDDQ/VDD2) rails from a memory-dedicated PMIC with correct power-up sequencing per the Micron LPDDR4 datasheet (VDD before VDDQ-dependent rails, RESET# held low during ramp). If the controller supports LPDDR4X mode, the MT53E die's 0.6V VDDQ capability reduces I/O power significantly - estimate savings as proportional to V^2 (0.6/1.1)^2, roughly a 70% reduction in I/O switching power, but only in LPDDR4X-capable systems.
Do not mix MT53D (prior generation) and MT53E dies in dual-die socketed designs without validating controller timing tables - the icallin migration guide documents that MT53D-to-MT53E migration requires firmware updates because the MT53D family is end-of-life. Also confirm ODT and drive-strength register settings in the boot loader match the -046 speed bin; defaults written for -053 or -062 bins will fail margin at full rate.
Place the WFBGA within 50 mm of the SoC to keep fly-by CA stubs short, and pour solid reference planes under all DQ/DQS/CA routing - do not split memory nets across plane gaps. Use via-in-pad or dog-bone fanout consistently; the 0.5 mm-class ball pitch of the 200-ball package demands fine-geometry PCB capability (typically 4/4 mil lines). Add bulk decoupling (22-47 uF) plus per-rail ceramic arrays close to the ball field.
Información de cumplimiento
The AUT:B grade variant is AEC-Q100 qualified per datasheets.com and Arrow listings. RoHS/REACH status not stated in provided web data - confirm on Micron part-detail page.
