MW7IC2040NBR1 vs MW7IC2220NBR1 Comparación
Comparación detallada lado a lado de MW7IC2040NBR1 por NXP Semiconductors y MW7IC2220NBR1 por NXP Semiconductors. Compare las especificaciones clave, los parámetros eléctricos, el encapsulado, el estado del ciclo de vida, los precios y la disponibilidad para determinar el mejor componente para los requisitos de su diseño.
NXP Semiconductors
MW7IC2040NBR1 - 4W RF LDMOS Wideband Power Amplifier | NXP Semiconductors
MW7IC2040NBR1 ✓ ActivoNXP Semiconductors
MW7IC2220NBR1 - 2W W-CDMA RF Power Amplifier 2.11-2.17 GHz | NXP
MW7IC2220NBR1 ✓ ActivoComparación de especificaciones
| Parámetro | MW7IC2040NBR1 | MW7IC2220NBR1 |
|---|---|---|
| Marca | NXP Semiconductors | NXP Semiconductors |
| Categoría | RF Amplifiers | RF Amplifiers |
| Estado del ciclo de vida | Activo | Activo |
| Estado del stock | In Stock | In Stock |
| Precio unitario (USD) | $15,20 | $21,50 |
| RF Type | General Purpose | — |
| Frequency Range | 1930 MHz to 1990 MHz (PCS) / 1805 MHz to 1880 MHz (DCS) | 2000 MHz to 2200 MHz (usable), 2110-2170 MHz (W-CDMA band) |
| Test Frequency | 1990 MHz | — |
| Gain | 23.5 dB (typ at 1990 MHz) | — |
| Output Power (P1dB/avg) | 4 W (family rating) | — |
| Tensión de alimentación | 24 V to 32 V | — |
| Quiescent Supply Current | 75 mA (typ) | — |
| Encapsulado / Carcasa | TO-272-16 Variant, Flat Leads | — |
| Tipo de montaje | Surface Mount | Surface Mount (flange/over-molded) |
| Technology | RF LDMOS (later-generation, on-chip matching) | RF LDMOS (Laterally Diffused MOSFET) |
| Number of Functions | 1 (multi-stage integrated PA) | — |
| Temperatura de funcionamiento | [DATA_NEEDED: operating temperature range] | — |
| Storage Temperature | [DATA_NEEDED: storage temperature range] | — |
| Modulation Support | W-CDMA, GSM, EDGE, CW | W-CDMA, TD-SCDMA, LTE, multi-carrier |
| Estado RoHS | Compliant (per ETEI / distributor data) | — |
| Función | — | W-CDMA Wideband Integrated Power Amplifier |
| Operating Frequency (typical) | — | 2167.5 MHz |
| Average Output Power | — | 2 W (33 dBm) |
| Drain Supply Voltage (VDD) | — | 28 V (24 V to 32 V operating range) |
| Small-Signal Gain | — | 31 dB (typical at 2.17 GHz) |
| Quiescent Current Stage 1 (IDQ1) | — | 80 mA |
| Quiescent Current Stage 2 (IDQ2) | — | 300 mA |
| Package Type | — | TO-272WB-16 (over-molded plastic) |
| Input Matching | — | On-chip (50 ohm nominal) |
| Output Matching | — | On-chip (50 ohm nominal) |
| Characteristic Impedance | — | 50 ohm |
| Maximum Operating Temperature | — | 150 C |
| Test Signal | — | Single-Carrier W-CDMA, IQ Magnitude Clipping, PAR = 7.5 dB |
| ACPR Measurement | — | 3.84 MHz channel bandwidth at +/-5 MHz offset |