MW7IC2040NBR1 vs MW7IC2220NBR1 Comparaison
Comparaison détaillée côte à côte de MW7IC2040NBR1 par NXP Semiconductors et MW7IC2220NBR1 par NXP Semiconductors. Comparez les spécifications clés, les paramètres électriques, le conditionnement, le statut de cycle de vie, les prix et la disponibilité pour déterminer le meilleur composant pour vos exigences de conception.
NXP Semiconductors
MW7IC2040NBR1 - 4W RF LDMOS Wideband Power Amplifier | NXP Semiconductors
MW7IC2040NBR1 ✓ ActifNXP Semiconductors
MW7IC2220NBR1 - 2W W-CDMA RF Power Amplifier 2.11-2.17 GHz | NXP
MW7IC2220NBR1 ✓ ActifComparaison des spécifications
| Paramètre | MW7IC2040NBR1 | MW7IC2220NBR1 |
|---|---|---|
| Marque | NXP Semiconductors | NXP Semiconductors |
| Catégorie | RF Amplifiers | RF Amplifiers |
| Statut du cycle de vie | Actif | Actif |
| Statut du stock | In Stock | In Stock |
| Prix unitaire (USD) | $15,20 | $21,50 |
| RF Type | General Purpose | — |
| Frequency Range | 1930 MHz to 1990 MHz (PCS) / 1805 MHz to 1880 MHz (DCS) | 2000 MHz to 2200 MHz (usable), 2110-2170 MHz (W-CDMA band) |
| Test Frequency | 1990 MHz | — |
| Gain | 23.5 dB (typ at 1990 MHz) | — |
| Output Power (P1dB/avg) | 4 W (family rating) | — |
| Tension d'alimentation | 24 V to 32 V | — |
| Quiescent Supply Current | 75 mA (typ) | — |
| Boîtier / Format | TO-272-16 Variant, Flat Leads | — |
| Type de montage | Surface Mount | Surface Mount (flange/over-molded) |
| Technology | RF LDMOS (later-generation, on-chip matching) | RF LDMOS (Laterally Diffused MOSFET) |
| Number of Functions | 1 (multi-stage integrated PA) | — |
| Température de fonctionnement | [DATA_NEEDED: operating temperature range] | — |
| Storage Temperature | [DATA_NEEDED: storage temperature range] | — |
| Modulation Support | W-CDMA, GSM, EDGE, CW | W-CDMA, TD-SCDMA, LTE, multi-carrier |
| Statut RoHS | Compliant (per ETEI / distributor data) | — |
| Fonction | — | W-CDMA Wideband Integrated Power Amplifier |
| Operating Frequency (typical) | — | 2167.5 MHz |
| Average Output Power | — | 2 W (33 dBm) |
| Drain Supply Voltage (VDD) | — | 28 V (24 V to 32 V operating range) |
| Small-Signal Gain | — | 31 dB (typical at 2.17 GHz) |
| Quiescent Current Stage 1 (IDQ1) | — | 80 mA |
| Quiescent Current Stage 2 (IDQ2) | — | 300 mA |
| Package Type | — | TO-272WB-16 (over-molded plastic) |
| Input Matching | — | On-chip (50 ohm nominal) |
| Output Matching | — | On-chip (50 ohm nominal) |
| Characteristic Impedance | — | 50 ohm |
| Maximum Operating Temperature | — | 150 C |
| Test Signal | — | Single-Carrier W-CDMA, IQ Magnitude Clipping, PAR = 7.5 dB |
| ACPR Measurement | — | 3.84 MHz channel bandwidth at +/-5 MHz offset |