MW7IC2040NR1 vs MW7IC2040GNR1 Comparación

Comparación detallada lado a lado de MW7IC2040NR1 por NXP Semiconductors y MW7IC2040GNR1 por NXP Semiconductors. Compare las especificaciones clave, los parámetros eléctricos, el encapsulado, el estado del ciclo de vida, los precios y la disponibilidad para determinar el mejor componente para los requisitos de su diseño.

NXP Semiconductors
MW7IC2040NR1 MW7IC2040NR1 - 4W RF LDMOS Wideband PA | NXP | Cellular BTS

MW7IC2040NR1 - 4W RF LDMOS Wideband PA | NXP | Cellular BTS

MW7IC2040NR1 ✓ Activo
NXP Semiconductors
MW7IC2040GNR1 MW7IC2040GNR1 - 4W RF LDMOS PA, 1.8-1.99 GHz | NXP

MW7IC2040GNR1 - 4W RF LDMOS PA, 1.8-1.99 GHz | NXP

MW7IC2040GNR1 Obsolete

Comparación de especificaciones

Parámetro MW7IC2040NR1 MW7IC2040GNR1
Marca NXP Semiconductors NXP Semiconductors
Categoría RF Amplifiers RF Amplifiers
Estado del ciclo de vida Activo Obsolete
Estado del stock In Stock In Stock
Precio unitario (USD) $24,20 $17,50
Manufacturer NXP Semiconductors (formerly Freescale / Motorola Semiconductor) NXP Semiconductors (formerly Freescale/Motorola)
Technology RF LDMOS (Laterally Diffused MOSFET) LDMOS (Laterally Diffused MOS)
RF Type General Purpose / Wideband Integrated Power Amplifier General Purpose / Cellular Base Station PA
Función Two-stage integrated power amplifier with on-chip matching —
Frequency Range (Application) 1805 MHz to 1990 MHz (covers 1805-1880 MHz DCS/PCS and 1930-1990 MHz UMTS) —
Frequency Range (Characterization) 100 MHz to 1 GHz —
Supply Voltage (Vdd) 24 V to 32 V (nominal 28 V) —
Maximum Supply Voltage 32 V —
Quiescent Supply Current (Idq) 75 mA —
Small-Signal Gain 23.5 dB 23.5 dB (typical at 1.99 GHz, per web data)
Output Power (avg, W-CDMA) 4 W (typical at rated operating conditions) —
Modulation Compatibility Single W-CDMA, GSM/EDGE, UMTS, LTE, all typical cellular BTS formats —
Encapsulado / Carcasa TO-270 WBL-16 (TO-270-16 Variant, Flat Leads), plastic over-mold surface-mount TO-270-16 Variant, Gull Wing (TO-270 WBL-16)
Recuento de pines 16 —
Operating Mode Class-AB (multi-stage, externally biased) —
Lead Configuration Flat leads (surface-mount) —
Tipo de montaje Surface Mount (PCB solderable with bottom drain ground plane) Surface Mount (Gull Wing leads)
Temperatura de funcionamiento -40 C to +85 C (industrial base-station operating ambient; per Freescale/NXP LDMOS module family) —
Packaging Type Tape & Reel (per part suffix NR1 suffix convention) —
Estado RoHS Compliant (per NXP product family) [DATA_NEEDED: RoHS status]
Part Family — MW7IC2040 (NR1 / GNR1 / NBR1)
Device Type — RF LDMOS Wideband Integrated Power Amplifier
Frequency Range — 1805 MHz to 1990 MHz
Output Power (CW) — 4 W typical
Power Supply Voltage — 24 V to 32 V (28 V nominal)
Corriente en reposo — 75 mA (typical, per web data)
Modulation Support — W-CDMA, GSM/EDGE, multi-carrier cellular
On-Chip Matching — Yes (input/output 50 ohm)
Number of Stages — 2 (multi-stage integrated)
Package Body Material — Plastic / Epoxy overmold
Packaging — Tape & Reel
Rango de temperatura de funcionamiento — [DATA_NEEDED: operating temperature range]
ESD Protection — Yes (integrated)
Lead-Free — [DATA_NEEDED: lead-free status]
Sin halógenos — Not Compliant (per GlobalSpec listing)

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