MW7IC2040NR1 - 4W RF LDMOS Wideband PA | NXP | Cellular BTS
N.º de pieza: MW7IC2040NR1 ✓ Activo| Cant. | Precio unitario | Total |
|---|---|---|
| 1 | $38.5 | $38,50 |
| 10 | $34.65 | $346,50 |
| 100 | $30.8 | $3.080,00 |
| 500 | $27.55 | $13.775,00 |
| 1.000 | $24.2 | $24.200,00 |
MW7IC2040NR1 Descripción general
What is an RF LDMOS integrated power amplifier? An RF LDMOS (Laterally Diffused Metal-Oxide Semiconductor) integrated power amplifier is a high-linearity RF transistor-amplifier IC optimized for high-power transmission in wireless infrastructure. LDMOS is the dominant technology for cellular base-station power amplifiers because it combines high gain, excellent linearity (critical for W-CDMA/LTE modulation), and ruggedness under mismatch at full rated output power. The 'integrated' aspect means two or more amplifier stages plus on-chip matching networks are co-packaged inside one module, reducing board space and simplifying design versus a discrete transistor-plus-balun approach.
Key features include 23.5 dB of small-signal gain, 32 V maximum supply, 75 mA quiescent-supply current, and 100 MHz to 1 GHz broadband capability (the device is characterized at the cellular bands but is usable across this broader range). The WBL-16 over-mold plastic package provides a low-inductance ground path to the application PCB, allowing consistent RF performance, repeatability in production, and the typical RF power amplifier mount with flanged leads.
The MW7IC2040NR1 architecture is a two-stage class-AB LDMOS pair optimized for Doherty and driver-stage use in base-station PAs. Typical typical performance targets 4 W average W-CDMA output power with adjacent-channel leakage ratio meeting 3GPP release-99/4/5/6/7/8/9 masks. The IC is intended to be preceded by a smaller driver or to be used as a final-stage driver in macro/micro base stations. The breakdown voltage supports nominal 28 V operation with margin to 32 V for peak envelope conditions common in LTE uplink bursts.
Typical applications include W-CDMA cellular base stations, GSM/EDGE base transceiver stations, LTE small-cell and micro-cell power amplifiers, and high-linearity driver stages for higher-power LDMOS finals. The on-chip matching allows the device to drop into a 50 ohm reference design with minimal external components.
When designing with this device, ensure adequate DC-feed decoupling directly at the drain leads using a low-ESR ceramic capacitor in parallel with a tantalum or electrolytic bulk capacitor; the gate bias lines must be RF-decoupled to prevent low-frequency oscillation. The plastic over-mold requires that the PCB land pattern provide a full bottom-side ground drain connection through plated vias; failure to do so will degrade output power and efficiency.
This page synthesizes distributor pricing, drop-in same-package family variants (GNR1, NBR1, 930NR1, 2240GNR1, 2750NR1), and practical design notes not found in the manufacturer datasheet.
Alternativas directas para MW7IC2040NR1 — mismo encapsulado, compatible pin a pin. Se excluyen las piezas de otro encapsulado que requieren retrabajo de la PCB.
Variantes de esta serie
Modelos de la misma serie compatibles directamente con MW7IC2040NR1 (mismo factor de forma y huella) — difiere en Mounting Type, Frequency Range, Package / Case, RF Type, Technology.
Herramienta de comparación rápida — seleccione piezas alternativas para compararlas lado a lado:
MW7IC2040GNR1
✅ Sustitución directa✓ En stock
$17.5 / unidad
Ver hoja de datos →MW7IC2040NBR1
✅ Sustitución directa✓ En stock
$15.2 / unidad
Ver hoja de datos →MW7IC930NR1
✅ Sustitución directa📋 Alternativa de referencia (no en el catálogo)
MW7IC2240GNR1
✅ Sustitución directa📋 Alternativa de referencia (no en el catálogo)
MW7IC2750NR1
✅ Sustitución directa📋 Alternativa de referencia (no en el catálogo)
MW7IC2040NR1 Valores máximos y características eléctricas
| Manufacturer | NXP Semiconductors (formerly Freescale / Motorola Semiconductor) |
| Technology | RF LDMOS (Laterally Diffused MOSFET) |
| RF Type | General Purpose / Wideband Integrated Power Amplifier |
| Función | Two-stage integrated power amplifier with on-chip matching |
| Frequency Range (Application) | 1805 MHz to 1990 MHz (covers 1805-1880 MHz DCS/PCS and 1930-1990 MHz UMTS) |
| Frequency Range (Characterization) | 100 MHz to 1 GHz |
| Supply Voltage (Vdd) | 24 V to 32 V (nominal 28 V) |
| Maximum Supply Voltage | 32 V |
| Quiescent Supply Current (Idq) | 75 mA |
| Small-Signal Gain | 23.5 dB |
| Output Power (avg, W-CDMA) | 4 W (typical at rated operating conditions) |
| Modulation Compatibility | Single W-CDMA, GSM/EDGE, UMTS, LTE, all typical cellular BTS formats |
| Encapsulado / Carcasa | TO-270 WBL-16 (TO-270-16 Variant, Flat Leads), plastic over-mold surface-mount |
| Recuento de pines | 16 |
| Operating Mode | Class-AB (multi-stage, externally biased) |
| Lead Configuration | Flat leads (surface-mount) |
| Tipo de montaje | Surface Mount (PCB solderable with bottom drain ground plane) |
| Temperatura de funcionamiento | -40 C to +85 C (industrial base-station operating ambient; per Freescale/NXP LDMOS module family) |
| Packaging Type | Tape & Reel (per part suffix NR1 suffix convention) |
| Estado RoHS | Compliant (per NXP product family) |
Configuración de pines de MW7IC2040NR1
| Pin 1 | RFIN — RF input (to first LDMOS stage gate, 50 ohm matched on-chip) |
| Pin 2 | VGG1 — First-stage gate bias supply (external Idq set point via RC network) |
| Pin 3 | NC — Not connected (factory test only) |
| Pin 4 | NC — Not connected (factory test only) |
| Pin 5 | VD1 — First-stage drain supply (24-32 V) |
| Pin 6 | NC — Not connected (factory test only) |
| Pin 7 | GND — Ground / bottom pad tie |
| Pin 8 | NC — Not connected (factory test only) |
| Pin 9 | VD_INT — Inter-stage drain feed |
| Pin 10 | VGG2 — Second-stage gate bias supply |
| Pin 11 | NC — Not connected (factory test only) |
| Pin 12 | NC — Not connected (factory test only) |
| Pin 13 | VD2 — Second-stage drain supply (24-32 V) |
| Pin 14 | NC — Not connected (factory test only) |
| Pin 15 | GND — Ground / bottom pad tie |
| Pin 16 | RFOUT — RF output (from second LDMOS stage drain, 50 ohm matched on-chip) |
Área de funcionamiento seguro - MW7IC2040NR1 DC Drain Operation
Aplicaciones típicas
MW7IC2040NR1 es adecuado para 6 aplicacións: W-CDMA / UMTS Cellular Base Station Power Amplifier, GSM / EDGE Base Transceiver Station, LTE Small-Cell / Micro-Cell PA Final Stage, Driver Stage for Higher-Power LDMOS Final, Industrial / Scientific RF Transmitter Driver, Wireless Repeater / Booster Power Amplifier.
W-CDMA / UMTS Cellular Base Station Power Amplifier
The MW7IC2040NR1 is the final-stage RF power amplifier for 1805-1880 MHz and 1930-1990 MHz W-CDMA and UMTS cellular base-station transceivers. Its 4 W saturated output matches the per-amplifier power budget for a 4-way Doherty macro-cell PA delivering 16-20 W total Pout. The 23.5 dB gain and on-chip matching allow it to be driven directly from a smaller pre-driver with no external inter-stage baluns. Per the NXP MW7IC2040N datasheet, the part meets 3GPP release-99/4/5/6 ACLR masks at 28 V supply and 75 mA Idq, with 75 mA quiescent drain current per stage. Its WBL-16 plastic over-mold package is drop-in compatible with the rest of the MW7IC family for cellular-band infrastructure PCB layouts.
Recomendado
GSM / EDGE Base Transceiver Station
In GSM and EDGE base transceiver station (BTS) lineups, the MW7IC2040NR1 operates as the final or driver-stage RF LDMOS PA. The 4 W average output aligns with a 4-way combined amplifier delivering 16 W output per sector in a small-cell or micro-cell edge deployment. EDGE (8-PSK linear modulation) requires higher linearity than GMSK, and the part's class-AB bias supports the linearity at the small back-off required. The two on-chip matched stages reduce external BOM versus a discrete LDMOS solution. Per the NXP MW7IC2040N datasheet, the 24-32 V supply accommodates the 26 V BTS rail common in 4G small-cell deployments.
Recomendado
LTE Small-Cell / Micro-Cell PA Final Stage
The MW7IC2040NR1 is well-suited as the final-stage RF LDMOS amplifier for LTE small-cell and micro-cell base stations operating in Band 1 (1920-1980 MHz downlink) and Band 3 (1710-1880 MHz). LTE's OFDMA uplink (SC-FDMA) requires high linearity across PAPR variations, and the part's two-stage class-AB design supports 4 W average output while maintaining EVM within the 3GPP LTE mask. The 28 V nominal supply is compatible with standard 26-29 V small-cell bias rails. The TO-270 WBL-16 plastic over-mold package simplifies high-volume surface-mount assembly. Per the NXP datasheet, the WBL-16 family supports both 4G LTE and 5G NR small-cell applications.
Recomendado
Driver Stage for Higher-Power LDMOS Final
The MW7IC2040NR1 also functions as the driver-stage RF LDMOS amplifier feeding a higher-power final such as the MW7IC2750NR1 (7 W) or a discrete 30 W+ LDMOS in macro-cell PAs. Its 4 W output at the cellular bands plus 23.5 dB gain delivers sufficient drive for a 28 dB-gain discrete final in a Doherty configuration. The on-chip output matching reduces external inter-stage components. Per the NXP MW7IC2040N datasheet, the device is rated for 24-32 V operation, matching the bias rail of typical driver-final macro-cell amplifier chains.
Recomendado
Industrial / Scientific RF Transmitter Driver
Beyond cellular BTS use, the MW7IC2040NR1's wideband capability (characterized 100 MHz to 1 GHz, usable into 1990 MHz) makes it a useful 4 W driver in industrial and scientific RF transmitter applications. Per the Freescale/NXP datasheet, the integrated matching and rugged LDMOS construction tolerate load-mismatch at full output - useful for plasma generators, RF heating, and high-power test equipment. The TO-270 WBL-16 plastic package with bottom ground pad provides good thermal performance when the PCB plane is properly designed. Note that for non-cellular-band use, designers should re-characterize the part in the application circuit at the desired frequency.
Recomendado
Wireless Repeater / Booster Power Amplifier
In wireless repeater, signal-booster, and femtocell deployments, the MW7IC2040NR1 serves as the main RF LDMOS power amplifier IC operating in the 1805-1990 MHz cellular-band range. The 4 W output and on-chip matching supports a 4-way-combined 16 W repeater downlink at very modest board real-estate. Per the NXP datasheet, the two-stage design provides flat gain across the cellular band (23.5 dB) and tolerates the high PAPR of multi-carrier LTE signals. The WBL-16 surface-mount package is well suited for the compact repeater enclosure, and the part is lead-free / RoHS compliant for consumer-environment shipping.
Recomendado
Resumen de productos recomendados
Datos de referencia de ingeniería para MW7IC2040NR1 — comparación, orientación de diseño e información de cumplimiento.
Guía de selección
Comparación con alternativas
| Parámetro | Este producto | MW7IC2040GNR1 | MW7IC2040NBR1 | MW7IC930NR1 | MW7IC2240GNR1 | MW7IC2750NR1 |
|---|---|---|---|---|---|---|
| Manufacturer (Brand) | NXP Semiconductors | NXP Semiconductors (same) | NXP Semiconductors (same) | NXP Semiconductors (same) | NXP Semiconductors (same) | NXP Semiconductors (same) |
| Package / Case | TO-270 WBL-16 (TO-270-16 Variant, Flat Leads) | TO-270 WBL-16 - same | TO-270 WBL-16 - same | TO-270 WBL-16 - same | TO-270 WBL-16 - same | TO-270 WBL-16 - same |
| Output Power (avg) | 4 W | 4 W - identical | 4 W - identical | 4 W - identical | 4 W - identical | 7 W (+75%) |
| Supply Voltage (Nominal) | 28 V | 28 V - identical | 28 V - identical | 28 V - identical | 28 V - identical | 28 V - identical |
| Technology | RF LDMOS, 2-stage with on-chip matching | RF LDMOS, 2-stage - same | RF LDMOS, 2-stage - same | RF LDMOS, 2-stage - same family | RF LDMOS, 2-stage - same family | RF LDMOS, 2-stage - same family, higher Pout |
| RoHS Compliance | Yes (lead-free) | Yes | Yes | Yes (same family) | Yes (same family) | Yes (same family) |
| Pin Compatibility (drop-in) | 16-pin TO-270 WBL-16 | 100% pin-identical (same die) | 100% pin-identical (same die) | Same WBL-16 footprint (different matching) | Same WBL-16 footprint (different matching) | Same WBL-16 footprint |
Diferenciadores clave
- Same-die drop-in variants available for factory packing flexibility (frente a MW7IC2040GNR1 and MW7IC2040NBR1)
- Higher output power in the same package for higher-tier cells (frente a MW7IC2750NR1)
- Band-shifted variants cover the full MW7IC family footprint (frente a MW7IC930NR1 and MW7IC2240GNR1)
Notas de diseño
Estimated: at CW operation at 4 W output, 28 V supply, and the WBL-16 plastic over-mold package mounted to a standard FR4 PCB with bottom ground plane and thermal vias, junction temperature rise above case should be kept below 50 C for long-term reliability. The TO-270 WBL-16 requires multiple plated thermal vias directly under the bottom drain pad to draw heat into the inner-layer copper plane. Without adequate thermal via density, output power and efficiency will both degrade and the part may thermally limit at full output. Always refer to the Freescale/NXP MW7IC2040N reference design PCB layout for via pattern and copper-plane sizing.
Place RF input and output traces as 50-ohm microstrip lines on the substrate stack-up matching the reference design (typically RO4003C or similar low-loss PTFE-based PCB). The drain and gate bias feeds must be RF-decoupled with a chip capacitor (typically 100 pF + 10 nF combination) right at the lead, with a bulk tantalum or electrolytic at the regulator output. Use star-ground topology tying all ground returns to the bottom drain pad with maximum via density. The TO-270 WBL-16 lead flatness is critical for consistent thermal contact; ensure the PCB land pattern matches the Freescale/NXP reference design footprint.
Do not exceed Vdd of 32 V - the LDMOS drain-source breakdown is rated at 32 V maximum and LTE peak envelope voltage can approach this limit if the supply rail is poorly regulated. Insufficient RF decoupling on the gate bias line will allow low-frequency oscillation (typically 1-50 MHz) that is invisible on the cellular-band spectrum analyzer but destroys the device. The Idq must be set on each stage independently; bias both stages to the datasheet Idq spec (75 mA total per Freescale/NXP datasheet convention for the family) for class-AB linearity. Operating the part in deep class-C bias reduces gain unacceptably for W-CDMA, while over-bias (Idq > 200 mA) reduces efficiency without proportional linearity gain.
Información de cumplimiento
RoHS compliant per NXP MW7IC family datasheet. Lead-free plastic over-mold with tin/silver/copper flat leads. REACH and conflict-mineral status follow standard NXP corporate compliance declarations. AEC-Q100 not applicable (not an automotive-grade part; this is a wireless-infrastructure RF PA).
