RMLV0816BGSD-4S2#AC0 vs RMLV0816BGSD-4S2 Comparación
Comparación detallada lado a lado de RMLV0816BGSD-4S2#AC0 por Renesas Electronics y RMLV0816BGSD-4S2 por Renesas Electronics. Compare las especificaciones clave, los parámetros eléctricos, el encapsulado, el estado del ciclo de vida, los precios y la disponibilidad para determinar el mejor componente para los requisitos de su diseño.
Renesas Electronics
RMLV0816BGSD-4S2#AC0 - 8Mb Advanced LPSRAM | Renesas | TSOP-II 52
RMLV0816BGSD-4S2#AC0 ✓ ActivoRenesas Electronics
RMLV0816BGSD-4S2 - 8Mb Low-Power SRAM 512Kx16 45ns TSOP | Renesas
RMLV0816BGSD-4S2 ✓ ActivoComparación de especificaciones
| Parámetro | RMLV0816BGSD-4S2#AC0 | RMLV0816BGSD-4S2 |
|---|---|---|
| Marca | Renesas Electronics | Renesas Electronics |
| Categoría | Memory ICs | Memory ICs |
| Estado del ciclo de vida | Activo | Activo |
| Estado del stock | In Stock | In Stock |
| Precio unitario (USD) | $3,78 | $2,50 |
| Tipo de memoria | Volatile SRAM (LPSRAM) | Static RAM (SRAM), Asynchronous |
| Tamaño de memoria | 8 Mbit | — |
| Organización de memoria | 524,288-word × 16-bit (configurable to 1M × 8) | 524,288-word x 16-bit (512K x 16) |
| Bus Width | Parallel, 8-bit or 16-bit | — |
| Tipo de interfaz | Parallel (asynchronous) | — |
| Access Time | 45 ns | 45 ns |
| Supply Voltage (VCC) | 2.4 V to 3.6 V | 2.7 V to 3.6 V |
| Rango de temperatura de funcionamiento | -40 °C to +85 °C | -40 C to +85 C (industrial) |
| Package Type | 52-TSOP II | — |
| Tipo de montaje | Surface Mount | Surface Mount |
| Process Technology | Renesas Advanced LPSRAM CMOS | Renesas Advanced LPSRAM CMOS |
| Configuración de salida | Three-state (with OE# control) | — |
| Byte Control | UB# (upper byte), LB# (lower byte) | /LB and /UB (lower/upper byte enable) |
| Write Control | WE# (active-low) | — |
| Chip Enable | CE# (active-low) | — |
| Nivel MSL | MSL3 (per JEDEC J-STD-020, where stated in the datasheet) | 3 (per JEDEC J-STD-020, typical for TSOP-II) |
| Estado RoHS | Compliant | Compliant |
| Data Retention Voltage (typical) | 2.0 V [DATA_NEEDED: confirm from datasheet retention section] | — |
| Memory Subcategory | — | Low-Power SRAM (LPSRAM) |
| Memory Density | — | 8 Mbit |
| Interfaz | — | Parallel (asynchronous) |
| Encapsulado | — | 52-pin TSOP-II |
| Output Enable (/OE) | — | Yes |
| Write Enable (/WE) | — | Yes |
| Chip Select (/CS) | — | Yes |
| I/O Compatibility | — | TTL-compatible |
| Standby Current | — | [DATA_NEEDED: standby current] |
| Active Current | — | [DATA_NEEDED: operating current] |