RMLV0816BGSD-4S2#AC0 vs RMLV0816BGSD-4S2 Comparaison
Comparaison détaillée côte à côte de RMLV0816BGSD-4S2#AC0 par Renesas Electronics et RMLV0816BGSD-4S2 par Renesas Electronics. Comparez les spécifications clés, les paramètres électriques, le conditionnement, le statut de cycle de vie, les prix et la disponibilité pour déterminer le meilleur composant pour vos exigences de conception.
Renesas Electronics
RMLV0816BGSD-4S2#AC0 - 8Mb Advanced LPSRAM | Renesas | TSOP-II 52
RMLV0816BGSD-4S2#AC0 ✓ ActifRenesas Electronics
RMLV0816BGSD-4S2 - 8Mb Low-Power SRAM 512Kx16 45ns TSOP | Renesas
RMLV0816BGSD-4S2 ✓ ActifComparaison des spécifications
| Paramètre | RMLV0816BGSD-4S2#AC0 | RMLV0816BGSD-4S2 |
|---|---|---|
| Marque | Renesas Electronics | Renesas Electronics |
| Catégorie | Memory ICs | Memory ICs |
| Statut du cycle de vie | Actif | Actif |
| Statut du stock | In Stock | In Stock |
| Prix unitaire (USD) | $3,78 | $2,50 |
| Type de mémoire | Volatile SRAM (LPSRAM) | Static RAM (SRAM), Asynchronous |
| Taille de mémoire | 8 Mbit | — |
| Organisation de la mémoire | 524,288-word × 16-bit (configurable to 1M × 8) | 524,288-word x 16-bit (512K x 16) |
| Bus Width | Parallel, 8-bit or 16-bit | — |
| Type d'interface | Parallel (asynchronous) | — |
| Access Time | 45 ns | 45 ns |
| Supply Voltage (VCC) | 2.4 V to 3.6 V | 2.7 V to 3.6 V |
| Plage de température de fonctionnement | -40 °C to +85 °C | -40 C to +85 C (industrial) |
| Package Type | 52-TSOP II | — |
| Type de montage | Surface Mount | Surface Mount |
| Process Technology | Renesas Advanced LPSRAM CMOS | Renesas Advanced LPSRAM CMOS |
| Configuration de sortie | Three-state (with OE# control) | — |
| Byte Control | UB# (upper byte), LB# (lower byte) | /LB and /UB (lower/upper byte enable) |
| Write Control | WE# (active-low) | — |
| Chip Enable | CE# (active-low) | — |
| Niveau MSL | MSL3 (per JEDEC J-STD-020, where stated in the datasheet) | 3 (per JEDEC J-STD-020, typical for TSOP-II) |
| Statut RoHS | Compliant | Compliant |
| Data Retention Voltage (typical) | 2.0 V [DATA_NEEDED: confirm from datasheet retention section] | — |
| Memory Subcategory | — | Low-Power SRAM (LPSRAM) |
| Memory Density | — | 8 Mbit |
| Interface | — | Parallel (asynchronous) |
| Boîtier | — | 52-pin TSOP-II |
| Output Enable (/OE) | — | Yes |
| Write Enable (/WE) | — | Yes |
| Chip Select (/CS) | — | Yes |
| I/O Compatibility | — | TTL-compatible |
| Standby Current | — | [DATA_NEEDED: standby current] |
| Active Current | — | [DATA_NEEDED: operating current] |