RMLV0816BGSD-4S2#AC0 vs RMLV0816BGSD-4S2 Vergleich
Detaillierter Direktvergleich von RMLV0816BGSD-4S2#AC0 von Renesas Electronics und RMLV0816BGSD-4S2 von Renesas Electronics. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.
Renesas Electronics
RMLV0816BGSD-4S2#AC0 - 8Mb Advanced LPSRAM | Renesas | TSOP-II 52
RMLV0816BGSD-4S2#AC0 ✓ AktivRenesas Electronics
RMLV0816BGSD-4S2 - 8Mb Low-Power SRAM 512Kx16 45ns TSOP | Renesas
RMLV0816BGSD-4S2 ✓ AktivSpezifikationsvergleich
| Parameter | RMLV0816BGSD-4S2#AC0 | RMLV0816BGSD-4S2 |
|---|---|---|
| Marke | Renesas Electronics | Renesas Electronics |
| Kategorie | Memory ICs | Memory ICs |
| Lebenszyklusstatus | Aktiv | Aktiv |
| Lagerstatus | In Stock | In Stock |
| Stückpreis (USD) | $3,78 | $2,50 |
| Speichertyp | Volatile SRAM (LPSRAM) | Static RAM (SRAM), Asynchronous |
| Speichergröße | 8 Mbit | — |
| Speicherorganisation | 524,288-word × 16-bit (configurable to 1M × 8) | 524,288-word x 16-bit (512K x 16) |
| Bus Width | Parallel, 8-bit or 16-bit | — |
| Schnittstellentyp | Parallel (asynchronous) | — |
| Access Time | 45 ns | 45 ns |
| Supply Voltage (VCC) | 2.4 V to 3.6 V | 2.7 V to 3.6 V |
| Betriebstemperaturbereich | -40 °C to +85 °C | -40 C to +85 C (industrial) |
| Package Type | 52-TSOP II | — |
| Montageart | Surface Mount | Surface Mount |
| Process Technology | Renesas Advanced LPSRAM CMOS | Renesas Advanced LPSRAM CMOS |
| Ausgangskonfiguration | Three-state (with OE# control) | — |
| Byte Control | UB# (upper byte), LB# (lower byte) | /LB and /UB (lower/upper byte enable) |
| Write Control | WE# (active-low) | — |
| Chip Enable | CE# (active-low) | — |
| MSL-Level | MSL3 (per JEDEC J-STD-020, where stated in the datasheet) | 3 (per JEDEC J-STD-020, typical for TSOP-II) |
| RoHS-Status | Compliant | Compliant |
| Data Retention Voltage (typical) | 2.0 V [DATA_NEEDED: confirm from datasheet retention section] | — |
| Memory Subcategory | — | Low-Power SRAM (LPSRAM) |
| Memory Density | — | 8 Mbit |
| Schnittstelle | — | Parallel (asynchronous) |
| Gehäuse | — | 52-pin TSOP-II |
| Output Enable (/OE) | — | Yes |
| Write Enable (/WE) | — | Yes |
| Chip Select (/CS) | — | Yes |
| I/O Compatibility | — | TTL-compatible |
| Standby Current | — | [DATA_NEEDED: standby current] |
| Active Current | — | [DATA_NEEDED: operating current] |