RTAX1000S-LG624V vs RTAX1000S-1LG624V Comparación
Comparación detallada lado a lado de RTAX1000S-LG624V por Microchip Technology y RTAX1000S-1LG624V por Microchip Technology. Compare las especificaciones clave, los parámetros eléctricos, el encapsulado, el estado del ciclo de vida, los precios y la disponibilidad para determinar el mejor componente para los requisitos de su diseño.
Microchip Technology
RTAX1000S-LG624V - 1M-Gate Rad-Tolerant FPGA | Microchip
RTAX1000S-LG624V ✓ ActivoMicrochip Technology
RTAX1000S-1LG624V - 1M-Gate Rad-Tolerant FPGA | Microchip
RTAX1000S-1LG624V ✓ ActivoComparación de especificaciones
| Parámetro | RTAX1000S-LG624V | RTAX1000S-1LG624V |
|---|---|---|
| Marca | Microchip Technology | Microchip Technology |
| Categoría | FPGA & CPLD | FPGA & CPLD |
| Estado del ciclo de vida | Activo | Activo |
| Estado del stock | In Stock | In Stock |
| Precio unitario (USD) | $2.600,00 | $3.600,00 |
| Family | RTAX-S/SL Radiation-Tolerant FPGA | — |
| Equivalent System Gates | 1,000,000 | 1000000 |
| Logic Cells | 18144 | 18144 |
| Configurable Logic Blocks (CLBs) | 12096 | — |
| Technology | Digital CMOS, antifuse-based | CMOS antifuse (one-time programmable) |
| Core Supply Voltage | 1.5 V (nominal) | — |
| Configuration Type | One-Time Programmable (antifuse), live at power-up | — |
| Embedded Memory | Embedded SRAM with built-in FIFO control logic | Up to 540 kbits SRAM with optional EDAC |
| Encapsulado | CG624 (624-pin ceramic column grid array, LG624) | LG624 (624-ball ceramic column grid array) |
| Temperatura de funcionamiento | -55C to +125C | [DATA_NEEDED: operating temperature range] |
| Application Domain | Space-flight systems, radiation-tolerant | — |
| Maximum Family Density | 4,000,000 equivalent system gates (family) | — |
| Tipo de montaje | Surface Mount | Surface Mount |
| Number of User I/O | [DATA_NEEDED: number of user I/O for LG624 package] | — |
| Block RAM Capacity | [DATA_NEEDED: embedded SRAM bit capacity] | — |
| Estado RoHS | [DATA_NEEDED: RoHS status] | [DATA_NEEDED: RoHS status] |
| CLBs | — | 12096 |
| Maximum User I/Os | — | 418 |
| Total Ionizing Dose (Functional) | — | 300 krad (Si) |
| Total Ionizing Dose (Parametric) | — | 200 krad (Si) |
| SEU Rate | — | Less than 1E-10 errors per bit-day |
| Combinatorial Delay (max) | — | 0.93 ns |
| Speed Grade | — | -1 |
| Configuration | — | Nonvolatile, live at power-up, single chip |
| Radiation Tolerance Class | — | Rad-tolerant (space flight) |
| Architecture Family | — | RTAX-S (based on Axcelerator) |
| Screening | — | [DATA_NEEDED: screening flow per order code suffix] |
| Supply Voltage (Core) | — | [DATA_NEEDED: core supply voltage] |