RTAX1000S-LG624V vs RTAX1000S-1LG624V Comparação

Comparação detalhada lado a lado de RTAX1000S-LG624V por Microchip Technology e RTAX1000S-1LG624V por Microchip Technology. Compare especificações principais, parâmetros elétricos, encapsulamento, status do ciclo de vida, preços e disponibilidade para determinar o melhor componente para os requisitos do seu projeto.

Microchip Technology
RTAX1000S-LG624V RTAX1000S-LG624V - 1M-Gate Rad-Tolerant FPGA | Microchip

RTAX1000S-LG624V - 1M-Gate Rad-Tolerant FPGA | Microchip

RTAX1000S-LG624V ✓ Ativo
Microchip Technology
RTAX1000S-1LG624V RTAX1000S-1LG624V - 1M-Gate Rad-Tolerant FPGA | Microchip

RTAX1000S-1LG624V - 1M-Gate Rad-Tolerant FPGA | Microchip

RTAX1000S-1LG624V ✓ Ativo

Comparação de especificações

Parâmetro RTAX1000S-LG624V RTAX1000S-1LG624V
Marca Microchip Technology Microchip Technology
Categoria FPGA & CPLD FPGA & CPLD
Status do ciclo de vida Ativo Ativo
Status do estoque In Stock In Stock
Preço unitário (USD) $2.600,00 $3.600,00
Family RTAX-S/SL Radiation-Tolerant FPGA —
Equivalent System Gates 1,000,000 1000000
Logic Cells 18144 18144
Configurable Logic Blocks (CLBs) 12096 —
Technology Digital CMOS, antifuse-based CMOS antifuse (one-time programmable)
Core Supply Voltage 1.5 V (nominal) —
Configuration Type One-Time Programmable (antifuse), live at power-up —
Embedded Memory Embedded SRAM with built-in FIFO control logic Up to 540 kbits SRAM with optional EDAC
Encapsulamento CG624 (624-pin ceramic column grid array, LG624) LG624 (624-ball ceramic column grid array)
Temperatura de operação -55C to +125C [DATA_NEEDED: operating temperature range]
Application Domain Space-flight systems, radiation-tolerant —
Maximum Family Density 4,000,000 equivalent system gates (family) —
Tipo de montagem Surface Mount Surface Mount
Number of User I/O [DATA_NEEDED: number of user I/O for LG624 package] —
Block RAM Capacity [DATA_NEEDED: embedded SRAM bit capacity] —
Status RoHS [DATA_NEEDED: RoHS status] [DATA_NEEDED: RoHS status]
CLBs — 12096
Maximum User I/Os — 418
Total Ionizing Dose (Functional) — 300 krad (Si)
Total Ionizing Dose (Parametric) — 200 krad (Si)
SEU Rate — Less than 1E-10 errors per bit-day
Combinatorial Delay (max) — 0.93 ns
Speed Grade — -1
Configuration — Nonvolatile, live at power-up, single chip
Radiation Tolerance Class — Rad-tolerant (space flight)
Architecture Family — RTAX-S (based on Axcelerator)
Screening — [DATA_NEEDED: screening flow per order code suffix]
Supply Voltage (Core) — [DATA_NEEDED: core supply voltage]

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