RTAX1000S-LG624V vs RTAX1000S-1LG624V Comparaison
Comparaison détaillée côte à côte de RTAX1000S-LG624V par Microchip Technology et RTAX1000S-1LG624V par Microchip Technology. Comparez les spécifications clés, les paramètres électriques, le conditionnement, le statut de cycle de vie, les prix et la disponibilité pour déterminer le meilleur composant pour vos exigences de conception.
Microchip Technology
RTAX1000S-LG624V - 1M-Gate Rad-Tolerant FPGA | Microchip
RTAX1000S-LG624V ✓ ActifMicrochip Technology
RTAX1000S-1LG624V - 1M-Gate Rad-Tolerant FPGA | Microchip
RTAX1000S-1LG624V ✓ ActifComparaison des spécifications
| Paramètre | RTAX1000S-LG624V | RTAX1000S-1LG624V |
|---|---|---|
| Marque | Microchip Technology | Microchip Technology |
| Catégorie | FPGA & CPLD | FPGA & CPLD |
| Statut du cycle de vie | Actif | Actif |
| Statut du stock | In Stock | In Stock |
| Prix unitaire (USD) | $2 600,00 | $3 600,00 |
| Family | RTAX-S/SL Radiation-Tolerant FPGA | — |
| Equivalent System Gates | 1,000,000 | 1000000 |
| Logic Cells | 18144 | 18144 |
| Configurable Logic Blocks (CLBs) | 12096 | — |
| Technology | Digital CMOS, antifuse-based | CMOS antifuse (one-time programmable) |
| Core Supply Voltage | 1.5 V (nominal) | — |
| Configuration Type | One-Time Programmable (antifuse), live at power-up | — |
| Embedded Memory | Embedded SRAM with built-in FIFO control logic | Up to 540 kbits SRAM with optional EDAC |
| Boîtier | CG624 (624-pin ceramic column grid array, LG624) | LG624 (624-ball ceramic column grid array) |
| Température de fonctionnement | -55C to +125C | [DATA_NEEDED: operating temperature range] |
| Application Domain | Space-flight systems, radiation-tolerant | — |
| Maximum Family Density | 4,000,000 equivalent system gates (family) | — |
| Type de montage | Surface Mount | Surface Mount |
| Number of User I/O | [DATA_NEEDED: number of user I/O for LG624 package] | — |
| Block RAM Capacity | [DATA_NEEDED: embedded SRAM bit capacity] | — |
| Statut RoHS | [DATA_NEEDED: RoHS status] | [DATA_NEEDED: RoHS status] |
| CLBs | — | 12096 |
| Maximum User I/Os | — | 418 |
| Total Ionizing Dose (Functional) | — | 300 krad (Si) |
| Total Ionizing Dose (Parametric) | — | 200 krad (Si) |
| SEU Rate | — | Less than 1E-10 errors per bit-day |
| Combinatorial Delay (max) | — | 0.93 ns |
| Speed Grade | — | -1 |
| Configuration | — | Nonvolatile, live at power-up, single chip |
| Radiation Tolerance Class | — | Rad-tolerant (space flight) |
| Architecture Family | — | RTAX-S (based on Axcelerator) |
| Screening | — | [DATA_NEEDED: screening flow per order code suffix] |
| Supply Voltage (Core) | — | [DATA_NEEDED: core supply voltage] |