RTAX1000SL-LG624E vs RTAX1000S-1LG624V Comparación

Comparación detallada lado a lado de RTAX1000SL-LG624E por Microchip Technology y RTAX1000S-1LG624V por Microchip Technology. Compare las especificaciones clave, los parámetros eléctricos, el encapsulado, el estado del ciclo de vida, los precios y la disponibilidad para determinar el mejor componente para los requisitos de su diseño.

Microchip Technology
RTAX1000SL-LG624E RTAX1000SL-LG624E - 1M-Gate Rad-Tolerant FPGA 624-LGA | Microchip

RTAX1000SL-LG624E - 1M-Gate Rad-Tolerant FPGA 624-LGA | Microchip

RTAX1000SL-LG624E ✓ Activo
Microchip Technology
RTAX1000S-1LG624V RTAX1000S-1LG624V - 1M-Gate Rad-Tolerant FPGA | Microchip

RTAX1000S-1LG624V - 1M-Gate Rad-Tolerant FPGA | Microchip

RTAX1000S-1LG624V ✓ Activo

Comparación de especificaciones

Parámetro RTAX1000SL-LG624E RTAX1000S-1LG624V
Marca Microchip Technology Microchip Technology
Categoría FPGA & CPLD FPGA & CPLD
Estado del ciclo de vida Activo Activo
Estado del stock In Stock In Stock
Precio unitario (USD) $0,00 $3.600,00
Family RTAX-SL Radiation-Tolerant FPGA —
Equivalent System Gates 1,000,000 1000000
ASIC Gates 125,000 —
Logic Cells (CLBs) 12,096 —
Maximum Combinatorial Delay per CLB 0.93 ns —
Maximum Frequency 581 MHz —
Process Technology 0.15 um CMOS —
Core Supply Voltage 1.5 V —
Encapsulado 624-Pin LGA (CBGA624), Ceramic LG624 (624-ball ceramic column grid array)
Tipo de montaje Surface Mount Surface Mount
Packaging Box —
Technology Base CMOS, Antifuse —
Configuration Live-at-power-up (no external configuration device) Nonvolatile, live at power-up, single chip
Temperatura de funcionamiento [DATA_NEEDED: operating temperature range] [DATA_NEEDED: operating temperature range]
I/O Voltage Range [DATA_NEEDED: I/O voltage range] —
TID Rating [DATA_NEEDED: total ionizing dose rating] —
SEU Immunity [DATA_NEEDED: single-event upset immunity figure] —
Estado RoHS [DATA_NEEDED: RoHS status] [DATA_NEEDED: RoHS status]
Logic Cells — 18144
CLBs — 12096
Maximum User I/Os — 418
Embedded Memory — Up to 540 kbits SRAM with optional EDAC
Technology — CMOS antifuse (one-time programmable)
Total Ionizing Dose (Functional) — 300 krad (Si)
Total Ionizing Dose (Parametric) — 200 krad (Si)
SEU Rate — Less than 1E-10 errors per bit-day
Combinatorial Delay (max) — 0.93 ns
Speed Grade — -1
Radiation Tolerance Class — Rad-tolerant (space flight)
Architecture Family — RTAX-S (based on Axcelerator)
Screening — [DATA_NEEDED: screening flow per order code suffix]
Supply Voltage (Core) — [DATA_NEEDED: core supply voltage]

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