RTAX1000SL-LG624E vs RTAX1000S-1LG624V Comparação
Comparação detalhada lado a lado de RTAX1000SL-LG624E por Microchip Technology e RTAX1000S-1LG624V por Microchip Technology. Compare especificações principais, parâmetros elétricos, encapsulamento, status do ciclo de vida, preços e disponibilidade para determinar o melhor componente para os requisitos do seu projeto.
Microchip Technology
RTAX1000SL-LG624E - 1M-Gate Rad-Tolerant FPGA 624-LGA | Microchip
RTAX1000SL-LG624E ✓ AtivoMicrochip Technology
RTAX1000S-1LG624V - 1M-Gate Rad-Tolerant FPGA | Microchip
RTAX1000S-1LG624V ✓ AtivoComparação de especificações
| Parâmetro | RTAX1000SL-LG624E | RTAX1000S-1LG624V |
|---|---|---|
| Marca | Microchip Technology | Microchip Technology |
| Categoria | FPGA & CPLD | FPGA & CPLD |
| Status do ciclo de vida | Ativo | Ativo |
| Status do estoque | In Stock | In Stock |
| Preço unitário (USD) | $0,00 | $3.600,00 |
| Family | RTAX-SL Radiation-Tolerant FPGA | — |
| Equivalent System Gates | 1,000,000 | 1000000 |
| ASIC Gates | 125,000 | — |
| Logic Cells (CLBs) | 12,096 | — |
| Maximum Combinatorial Delay per CLB | 0.93 ns | — |
| Maximum Frequency | 581 MHz | — |
| Process Technology | 0.15 um CMOS | — |
| Core Supply Voltage | 1.5 V | — |
| Encapsulamento | 624-Pin LGA (CBGA624), Ceramic | LG624 (624-ball ceramic column grid array) |
| Tipo de montagem | Surface Mount | Surface Mount |
| Packaging | Box | — |
| Technology Base | CMOS, Antifuse | — |
| Configuration | Live-at-power-up (no external configuration device) | Nonvolatile, live at power-up, single chip |
| Temperatura de operação | [DATA_NEEDED: operating temperature range] | [DATA_NEEDED: operating temperature range] |
| I/O Voltage Range | [DATA_NEEDED: I/O voltage range] | — |
| TID Rating | [DATA_NEEDED: total ionizing dose rating] | — |
| SEU Immunity | [DATA_NEEDED: single-event upset immunity figure] | — |
| Status RoHS | [DATA_NEEDED: RoHS status] | [DATA_NEEDED: RoHS status] |
| Logic Cells | — | 18144 |
| CLBs | — | 12096 |
| Maximum User I/Os | — | 418 |
| Embedded Memory | — | Up to 540 kbits SRAM with optional EDAC |
| Technology | — | CMOS antifuse (one-time programmable) |
| Total Ionizing Dose (Functional) | — | 300 krad (Si) |
| Total Ionizing Dose (Parametric) | — | 200 krad (Si) |
| SEU Rate | — | Less than 1E-10 errors per bit-day |
| Combinatorial Delay (max) | — | 0.93 ns |
| Speed Grade | — | -1 |
| Radiation Tolerance Class | — | Rad-tolerant (space flight) |
| Architecture Family | — | RTAX-S (based on Axcelerator) |
| Screening | — | [DATA_NEEDED: screening flow per order code suffix] |
| Supply Voltage (Core) | — | [DATA_NEEDED: core supply voltage] |