RTAX1000SL-LG624E vs RTAX1000S-1LG624V Comparaison
Comparaison détaillée côte à côte de RTAX1000SL-LG624E par Microchip Technology et RTAX1000S-1LG624V par Microchip Technology. Comparez les spécifications clés, les paramètres électriques, le conditionnement, le statut de cycle de vie, les prix et la disponibilité pour déterminer le meilleur composant pour vos exigences de conception.
Microchip Technology
RTAX1000SL-LG624E - 1M-Gate Rad-Tolerant FPGA 624-LGA | Microchip
RTAX1000SL-LG624E ✓ ActifMicrochip Technology
RTAX1000S-1LG624V - 1M-Gate Rad-Tolerant FPGA | Microchip
RTAX1000S-1LG624V ✓ ActifComparaison des spécifications
| Paramètre | RTAX1000SL-LG624E | RTAX1000S-1LG624V |
|---|---|---|
| Marque | Microchip Technology | Microchip Technology |
| Catégorie | FPGA & CPLD | FPGA & CPLD |
| Statut du cycle de vie | Actif | Actif |
| Statut du stock | In Stock | In Stock |
| Prix unitaire (USD) | $0,00 | $3 600,00 |
| Family | RTAX-SL Radiation-Tolerant FPGA | — |
| Equivalent System Gates | 1,000,000 | 1000000 |
| ASIC Gates | 125,000 | — |
| Logic Cells (CLBs) | 12,096 | — |
| Maximum Combinatorial Delay per CLB | 0.93 ns | — |
| Maximum Frequency | 581 MHz | — |
| Process Technology | 0.15 um CMOS | — |
| Core Supply Voltage | 1.5 V | — |
| Boîtier | 624-Pin LGA (CBGA624), Ceramic | LG624 (624-ball ceramic column grid array) |
| Type de montage | Surface Mount | Surface Mount |
| Packaging | Box | — |
| Technology Base | CMOS, Antifuse | — |
| Configuration | Live-at-power-up (no external configuration device) | Nonvolatile, live at power-up, single chip |
| Température de fonctionnement | [DATA_NEEDED: operating temperature range] | [DATA_NEEDED: operating temperature range] |
| I/O Voltage Range | [DATA_NEEDED: I/O voltage range] | — |
| TID Rating | [DATA_NEEDED: total ionizing dose rating] | — |
| SEU Immunity | [DATA_NEEDED: single-event upset immunity figure] | — |
| Statut RoHS | [DATA_NEEDED: RoHS status] | [DATA_NEEDED: RoHS status] |
| Logic Cells | — | 18144 |
| CLBs | — | 12096 |
| Maximum User I/Os | — | 418 |
| Embedded Memory | — | Up to 540 kbits SRAM with optional EDAC |
| Technology | — | CMOS antifuse (one-time programmable) |
| Total Ionizing Dose (Functional) | — | 300 krad (Si) |
| Total Ionizing Dose (Parametric) | — | 200 krad (Si) |
| SEU Rate | — | Less than 1E-10 errors per bit-day |
| Combinatorial Delay (max) | — | 0.93 ns |
| Speed Grade | — | -1 |
| Radiation Tolerance Class | — | Rad-tolerant (space flight) |
| Architecture Family | — | RTAX-S (based on Axcelerator) |
| Screening | — | [DATA_NEEDED: screening flow per order code suffix] |
| Supply Voltage (Core) | — | [DATA_NEEDED: core supply voltage] |