RTAX2000DL-1CQ352V vs RTAX2000SL-1CQ352V Comparación
Comparación detallada lado a lado de RTAX2000DL-1CQ352V por Microchip Technology y RTAX2000SL-1CQ352V por Microchip Technology. Compare las especificaciones clave, los parámetros eléctricos, el encapsulado, el estado del ciclo de vida, los precios y la disponibilidad para determinar el mejor componente para los requisitos de su diseño.
Microchip Technology
RTAX2000DL-1CQ352V - 2M-Gate Rad-Tolerant FPGA | Microchip
RTAX2000DL-1CQ352V ✓ ActivoMicrochip Technology
RTAX2000SL-1CQ352V - 2M-Gate Rad-Tolerant FPGA | Microchip
RTAX2000SL-1CQ352V ✓ ActivoComparación de especificaciones
| Parámetro | RTAX2000DL-1CQ352V | RTAX2000SL-1CQ352V |
|---|---|---|
| Marca | Microchip Technology | Microchip Technology |
| Categoría | FPGA & CPLD | FPGA & CPLD |
| Estado del ciclo de vida | Activo | Activo |
| Estado del stock | In Stock | In Stock |
| Precio unitario (USD) | $2.950,00 | $2.050,00 |
| Family | RTAX-DSP (RTAX2000DL) | RTAX-S/SL Radiation-Tolerant FPGA |
| Equivalent System Gates | 2,000,000 (approx.) | 2,000,000 |
| Logic Cells | 29,568 | 32,256 |
| CLBs | 19,712 | — |
| Core Supply Voltage | 1.425 V to 1.575 V (nominal 1.5 V) | 1.5 V (1.425 V to 1.575 V) |
| Technology | Digital CMOS | — |
| Programming Technology | Antifuse (one-time programmable) | — |
| Radiation Tolerance | Radiation-tolerant (RTAX-DSP) | Radiation-tolerant (space flight grade) |
| Configuration | Live at power-up, no external boot memory | Live at power-up, single chip (antifuse) |
| Speed Grade | -1 | — |
| Encapsulado | CQ352 (352-pin ceramic QFP) | 352-pin ceramic CQFP (CQ352) |
| Tipo de montaje | Surface Mount | Surface Mount |
| Application Domain | Space-flight systems | Space flight systems |
| Special Features | DSP multiply-accumulate blocks (DL variant) | — |
| Estado RoHS | [DATA_NEEDED: RoHS Status] | [DATA_NEEDED: RoHS status] |
| Temperatura de funcionamiento | [DATA_NEEDED: Operating Temperature] | [DATA_NEEDED: operating temperature range] |
| Embedded SRAM | [DATA_NEEDED: Embedded SRAM capacity] | — |
| CLB Count | — | 21,504 |
| Process Technology | — | CMOS, antifuse OTP interconnect |
| Embedded Memory | — | Embedded SRAM with built-in FIFO control |
| Clocking | — | Segmentable clock resources, chip-wide highway routing |
| I/O Supply Voltage | — | [DATA_NEEDED: I/O bank voltage] |
| Total Ionizing Dose (TID) | — | [DATA_NEEDED: TID rating] |
| Nivel MSL | — | Not applicable (ceramic package) |