S9S08QD4J1VSC vs S9S08QD4J2MSCR Comparación
Comparación detallada lado a lado de S9S08QD4J1VSC por NXP Semiconductors y S9S08QD4J2MSCR por NXP Semiconductors. Compare las especificaciones clave, los parámetros eléctricos, el encapsulado, el estado del ciclo de vida, los precios y la disponibilidad para determinar el mejor componente para los requisitos de su diseño.
Comparación de especificaciones
| Parámetro | S9S08QD4J1VSC | S9S08QD4J2MSCR |
|---|---|---|
| Marca | NXP Semiconductors | NXP Semiconductors |
| Categoría | Microcontrollers | Microcontrollers |
| Estado del ciclo de vida | NRND | Activo |
| Estado del stock | In Stock | In Stock |
| Precio unitario (USD) | $1,31 | $1,55 |
| Core Architecture | HCS08 (S08 family) | — |
| CPU Bit Width | 8-bit | — |
| Maximum CPU Frequency | 16 MHz | 16 MHz |
| Program Memory (Flash) | 4 KB (4K x 8) | — |
| RAM | 256 B | — |
| Supply Voltage (VDD) | 2.7 V to 5.5 V | — |
| Temperatura de funcionamiento | -40C to +105C | -40 C to +125 C |
| Encapsulado | 8-pin SOIC (SOIC-8) | 8-SOIC (0.154 inch, 3.90 mm width) |
| Tipo de montaje | Surface Mount | Surface Mount |
| ADC | 8-channel 10-bit | 10-bit, 4-channel with internal bandgap/temperature sensor, hardware triggerable via RTI |
| Timers | TPM (16-bit) + MTIM (8-bit) | TIM1 - 2-channel (input capture / output compare / buffered edge- or center-aligned PWM) |
| Debug Interface | Background debug (single wire) + on-chip breakpoints | — |
| AEC-Q100 | Qualified (automotive) | — |
| Instruction Set | HC08 + BGND | — |
| Nivel MSL | MSL3 (per SOIC-8 standard) | — |
| Estado RoHS | Compliant | Compliant |
| Core | — | HCS08 |
| Instruction Set Architecture | — | CISC (68 HC08 with added BGND) |
| Core Width | — | 8-bit |
| Program Memory Type | — | Flash |
| Program Memory Size | — | 4 KB (4K x 8) |
| Tensión de alimentación | — | 2.7 V to 5.5 V |
| Packaging | — | Tape & Reel (TR) |
| I/O Pins | — | 4 |
| Debug | — | Background Debug Mode (BDM); single breakpoint + two additional on-chip breakpoints |