UCC21521DWR vs UCC21550BDWR Comparación
Comparación detallada lado a lado de UCC21521DWR por Texas Instruments y UCC21550BDWR por Texas Instruments. Compare las especificaciones clave, los parámetros eléctricos, el encapsulado, el estado del ciclo de vida, los precios y la disponibilidad para determinar el mejor componente para los requisitos de su diseño.
Texas Instruments
UCC21550BDWR - 4A/6A Dual Isolated Gate Driver | Texas Instruments
UCC21550BDWR ✓ ActivoComparación de especificaciones
| Parámetro | UCC21521DWR | UCC21550BDWR |
|---|---|---|
| Marca | Texas Instruments | Texas Instruments |
| Categoría | Power MOSFET Drivers | Power MOSFET Drivers |
| Estado del ciclo de vida | Activo | Activo |
| Estado del stock | In Stock | In Stock |
| Precio unitario (USD) | $2,15 | $0,88 |
| Channel Count | 2 | — |
| Peak Source Current | 4 A | 4 A |
| Peak Sink Current | 6 A | 6 A |
| Isolation Rating | 5700 Vrms | — |
| CMTI | 100 V/ns (minimum) | — |
| Propagation Delay | 19 ns (typical) | — |
| Delay Matching | 5 ns (maximum) | — |
| Pulse-Width Distortion | 6 ns (maximum) | — |
| Minimum Pulse Width | 10 ns | — |
| Max Switching Frequency | 5 MHz | — |
| Isolation Technology | Capacitive coupling | — |
| Input Threshold | TTL and CMOS compatible (3.3 V logic) | — |
| Enable / Disable Pin | Yes (DIS) | — |
| Temperatura de funcionamiento | -40C to +125C | — |
| Encapsulado | SOIC-16 (DW) | 16-SOIC (DW) |
| Tipo de montaje | Surface Mount | Surface Mount |
| Configurations | Dual low-side, dual high-side, or half-bridge | — |
| Estado RoHS | Compliant | [DATA_NEEDED: RoHS status] |
| Configuración de salida | — | Dual-channel (dual low-side, dual high-side, or half-bridge) |
| Isolation Type | — | Capacitive coupling, reinforced isolation |
| Isolation Voltage | — | 5000 Vrms |
| CMTI (Common-Mode Transient Immunity) | — | > 125 V/ns |
| VDD Output Supply Range | — | Up to 25 V |
| UVLO Threshold | — | 8 V (VDD UVLO) |
| Programmable Dead Time | — | Yes |
| Disable Function | — | Yes |
| Junction Temperature Range | — | -40 C to +150 C |
| Driven Devices | — | Power MOSFET, SiC MOSFET, GaN FET, IGBT |