UCC21521DWR vs UCC21550BDWR Сравнение
Подробное сравнение бок о бок UCC21521DWR от Texas Instruments и UCC21550BDWR от Texas Instruments. Сравните ключевые характеристики, электрические параметры, упаковку, статус жизненного цикла, цены и наличие, чтобы выбрать лучший компонент для ваших требований.
Texas Instruments
UCC21550BDWR - 4A/6A Dual Isolated Gate Driver | Texas Instruments
UCC21550BDWR ✓ АктивенСравнение характеристик
| Параметр | UCC21521DWR | UCC21550BDWR |
|---|---|---|
| Бренд | Texas Instruments | Texas Instruments |
| Категория | Power MOSFET Drivers | Power MOSFET Drivers |
| Статус жизненного цикла | Активен | Активен |
| Наличие | In Stock | In Stock |
| Цена за единицу (USD) | $2,15 | $0,88 |
| Channel Count | 2 | — |
| Peak Source Current | 4 A | 4 A |
| Peak Sink Current | 6 A | 6 A |
| Isolation Rating | 5700 Vrms | — |
| CMTI | 100 V/ns (minimum) | — |
| Propagation Delay | 19 ns (typical) | — |
| Delay Matching | 5 ns (maximum) | — |
| Pulse-Width Distortion | 6 ns (maximum) | — |
| Minimum Pulse Width | 10 ns | — |
| Max Switching Frequency | 5 MHz | — |
| Isolation Technology | Capacitive coupling | — |
| Input Threshold | TTL and CMOS compatible (3.3 V logic) | — |
| Enable / Disable Pin | Yes (DIS) | — |
| Рабочая температура | -40C to +125C | — |
| Корпус | SOIC-16 (DW) | 16-SOIC (DW) |
| Тип монтажа | Surface Mount | Surface Mount |
| Configurations | Dual low-side, dual high-side, or half-bridge | — |
| Статус RoHS | Compliant | [DATA_NEEDED: RoHS status] |
| Выходная конфигурация | — | Dual-channel (dual low-side, dual high-side, or half-bridge) |
| Isolation Type | — | Capacitive coupling, reinforced isolation |
| Isolation Voltage | — | 5000 Vrms |
| CMTI (Common-Mode Transient Immunity) | — | > 125 V/ns |
| VDD Output Supply Range | — | Up to 25 V |
| UVLO Threshold | — | 8 V (VDD UVLO) |
| Programmable Dead Time | — | Yes |
| Disable Function | — | Yes |
| Junction Temperature Range | — | -40 C to +150 C |
| Driven Devices | — | Power MOSFET, SiC MOSFET, GaN FET, IGBT |