UCC21521DWR vs UCC21550BDWR 비교

다음의 상세 나란히 비교: UCC21521DWR 제조: Texas Instruments 및 UCC21550BDWR 제조: Texas Instruments. 주요 사양, 전기적 파라미터, 패키징, 수명 주기 상태, 가격 및 재고를 비교하여 설계 요구 사항에 가장 적합한 부품을 결정하십시오.

Texas Instruments
UCC21521DWR UCC21521 - 4A/6A 5.7kVrms Isolated Gate Driver | TI

UCC21521 - 4A/6A 5.7kVrms Isolated Gate Driver | TI

UCC21521DWR ✓ 활성
Texas Instruments
UCC21550BDWR UCC21550BDWR - 4A/6A Dual Isolated Gate Driver | Texas Instruments

UCC21550BDWR - 4A/6A Dual Isolated Gate Driver | Texas Instruments

UCC21550BDWR ✓ 활성

사양 비교

파라미터 UCC21521DWR UCC21550BDWR
브랜드 Texas Instruments Texas Instruments
카테고리 Power MOSFET Drivers Power MOSFET Drivers
수명 주기 상태 활성 활성
재고 상태 In Stock In Stock
단가 (USD) $2.15 $0.88
Channel Count 2 —
Peak Source Current 4 A 4 A
Peak Sink Current 6 A 6 A
Isolation Rating 5700 Vrms —
CMTI 100 V/ns (minimum) —
Propagation Delay 19 ns (typical) —
Delay Matching 5 ns (maximum) —
Pulse-Width Distortion 6 ns (maximum) —
Minimum Pulse Width 10 ns —
Max Switching Frequency 5 MHz —
Isolation Technology Capacitive coupling —
Input Threshold TTL and CMOS compatible (3.3 V logic) —
Enable / Disable Pin Yes (DIS) —
동작 온도 -40C to +125C —
패키지 SOIC-16 (DW) 16-SOIC (DW)
실장 유형 Surface Mount Surface Mount
Configurations Dual low-side, dual high-side, or half-bridge —
RoHS 상태 Compliant [DATA_NEEDED: RoHS status]
출력 구성 — Dual-channel (dual low-side, dual high-side, or half-bridge)
Isolation Type — Capacitive coupling, reinforced isolation
Isolation Voltage — 5000 Vrms
CMTI (Common-Mode Transient Immunity) — > 125 V/ns
VDD Output Supply Range — Up to 25 V
UVLO Threshold — 8 V (VDD UVLO)
Programmable Dead Time — Yes
Disable Function — Yes
Junction Temperature Range — -40 C to +150 C
Driven Devices — Power MOSFET, SiC MOSFET, GaN FET, IGBT

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