UCC21550BQDWRQ1 vs UCC21550BDWR Comparación
Comparación detallada lado a lado de UCC21550BQDWRQ1 por Texas Instruments y UCC21550BDWR por Texas Instruments. Compare las especificaciones clave, los parámetros eléctricos, el encapsulado, el estado del ciclo de vida, los precios y la disponibilidad para determinar el mejor componente para los requisitos de su diseño.
Texas Instruments
UCC21550BQDWRQ1 - 4A/6A Automotive Isolated Gate Driver | Texas Instruments
UCC21550BQDWRQ1 ✓ ActivoTexas Instruments
UCC21550BDWR - 4A/6A Dual Isolated Gate Driver | Texas Instruments
UCC21550BDWR ✓ ActivoComparación de especificaciones
| Parámetro | UCC21550BQDWRQ1 | UCC21550BDWR |
|---|---|---|
| Marca | Texas Instruments | Texas Instruments |
| Categoría | Power MOSFET Drivers | Power MOSFET Drivers |
| Estado del ciclo de vida | Activo | Activo |
| Estado del stock | In Stock | In Stock |
| Precio unitario (USD) | $2,45 | $0,88 |
| Driver Type | Dual-channel reinforced isolated gate driver | — |
| Peak Source Current | 4 A | 4 A |
| Peak Sink Current | 6 A | 6 A |
| Isolation Type | Capacitive coupling | Capacitive coupling, reinforced isolation |
| Isolation Voltage | 5000 Vrms | 5000 Vrms |
| Isolation Grade | Reinforced isolation | — |
| Number of Channels | 2 | — |
| Configuration | Two low-side / two high-side / half-bridge | — |
| Dead Time | Programmable (external resistor) | — |
| Disable Function | Yes | Yes |
| UVLO Threshold | 8 V (driver supply) | 8 V (VDD UVLO) |
| Target Transistors | Power MOSFET, SiC MOSFET, GaN FET, IGBT | — |
| Automotive Qualification | AEC-Q100 qualified (Q1) | — |
| Rango de temperatura de funcionamiento | [DATA_NEEDED: operating temperature range] | — |
| Encapsulado | 16-SOIC (DW) | 16-SOIC (DW) |
| Tipo de montaje | Surface Mount | Surface Mount |
| Tensión de alimentación de funcionamiento | [DATA_NEEDED: VCCI / VDD operating range] | — |
| Common-Mode Transient Immunity | [DATA_NEEDED: CMTI value] | — |
| Configuración de salida | — | Dual-channel (dual low-side, dual high-side, or half-bridge) |
| CMTI (Common-Mode Transient Immunity) | — | > 125 V/ns |
| VDD Output Supply Range | — | Up to 25 V |
| Programmable Dead Time | — | Yes |
| Junction Temperature Range | — | -40 C to +150 C |
| Driven Devices | — | Power MOSFET, SiC MOSFET, GaN FET, IGBT |
| Estado RoHS | — | [DATA_NEEDED: RoHS status] |