UCC21550BQDWRQ1 vs UCC21550BDWR 비교
다음의 상세 나란히 비교: UCC21550BQDWRQ1 제조: Texas Instruments 및 UCC21550BDWR 제조: Texas Instruments. 주요 사양, 전기적 파라미터, 패키징, 수명 주기 상태, 가격 및 재고를 비교하여 설계 요구 사항에 가장 적합한 부품을 결정하십시오.
Texas Instruments
UCC21550BQDWRQ1 - 4A/6A Automotive Isolated Gate Driver | Texas Instruments
UCC21550BQDWRQ1 ✓ 활성Texas Instruments
UCC21550BDWR - 4A/6A Dual Isolated Gate Driver | Texas Instruments
UCC21550BDWR ✓ 활성사양 비교
| 파라미터 | UCC21550BQDWRQ1 | UCC21550BDWR |
|---|---|---|
| 브랜드 | Texas Instruments | Texas Instruments |
| 카테고리 | Power MOSFET Drivers | Power MOSFET Drivers |
| 수명 주기 상태 | 활성 | 활성 |
| 재고 상태 | In Stock | In Stock |
| 단가 (USD) | $2.45 | $0.88 |
| Driver Type | Dual-channel reinforced isolated gate driver | — |
| Peak Source Current | 4 A | 4 A |
| Peak Sink Current | 6 A | 6 A |
| Isolation Type | Capacitive coupling | Capacitive coupling, reinforced isolation |
| Isolation Voltage | 5000 Vrms | 5000 Vrms |
| Isolation Grade | Reinforced isolation | — |
| Number of Channels | 2 | — |
| Configuration | Two low-side / two high-side / half-bridge | — |
| Dead Time | Programmable (external resistor) | — |
| Disable Function | Yes | Yes |
| UVLO Threshold | 8 V (driver supply) | 8 V (VDD UVLO) |
| Target Transistors | Power MOSFET, SiC MOSFET, GaN FET, IGBT | — |
| Automotive Qualification | AEC-Q100 qualified (Q1) | — |
| 동작 온도 범위 | [DATA_NEEDED: operating temperature range] | — |
| 패키지 | 16-SOIC (DW) | 16-SOIC (DW) |
| 실장 유형 | Surface Mount | Surface Mount |
| 동작 공급 전압 | [DATA_NEEDED: VCCI / VDD operating range] | — |
| Common-Mode Transient Immunity | [DATA_NEEDED: CMTI value] | — |
| 출력 구성 | — | Dual-channel (dual low-side, dual high-side, or half-bridge) |
| CMTI (Common-Mode Transient Immunity) | — | > 125 V/ns |
| VDD Output Supply Range | — | Up to 25 V |
| Programmable Dead Time | — | Yes |
| Junction Temperature Range | — | -40 C to +150 C |
| Driven Devices | — | Power MOSFET, SiC MOSFET, GaN FET, IGBT |
| RoHS 상태 | — | [DATA_NEEDED: RoHS status] |