UCC21550BQDWRQ1 vs UCC21550BDWR Comparaison
Comparaison détaillée côte à côte de UCC21550BQDWRQ1 par Texas Instruments et UCC21550BDWR par Texas Instruments. Comparez les spécifications clés, les paramètres électriques, le conditionnement, le statut de cycle de vie, les prix et la disponibilité pour déterminer le meilleur composant pour vos exigences de conception.
Texas Instruments
UCC21550BQDWRQ1 - 4A/6A Automotive Isolated Gate Driver | Texas Instruments
UCC21550BQDWRQ1 ✓ ActifTexas Instruments
UCC21550BDWR - 4A/6A Dual Isolated Gate Driver | Texas Instruments
UCC21550BDWR ✓ ActifComparaison des spécifications
| Paramètre | UCC21550BQDWRQ1 | UCC21550BDWR |
|---|---|---|
| Marque | Texas Instruments | Texas Instruments |
| Catégorie | Power MOSFET Drivers | Power MOSFET Drivers |
| Statut du cycle de vie | Actif | Actif |
| Statut du stock | In Stock | In Stock |
| Prix unitaire (USD) | $2,45 | $0,88 |
| Driver Type | Dual-channel reinforced isolated gate driver | — |
| Peak Source Current | 4 A | 4 A |
| Peak Sink Current | 6 A | 6 A |
| Isolation Type | Capacitive coupling | Capacitive coupling, reinforced isolation |
| Isolation Voltage | 5000 Vrms | 5000 Vrms |
| Isolation Grade | Reinforced isolation | — |
| Number of Channels | 2 | — |
| Configuration | Two low-side / two high-side / half-bridge | — |
| Dead Time | Programmable (external resistor) | — |
| Disable Function | Yes | Yes |
| UVLO Threshold | 8 V (driver supply) | 8 V (VDD UVLO) |
| Target Transistors | Power MOSFET, SiC MOSFET, GaN FET, IGBT | — |
| Automotive Qualification | AEC-Q100 qualified (Q1) | — |
| Plage de température de fonctionnement | [DATA_NEEDED: operating temperature range] | — |
| Boîtier | 16-SOIC (DW) | 16-SOIC (DW) |
| Type de montage | Surface Mount | Surface Mount |
| Tension d'alimentation de fonctionnement | [DATA_NEEDED: VCCI / VDD operating range] | — |
| Common-Mode Transient Immunity | [DATA_NEEDED: CMTI value] | — |
| Configuration de sortie | — | Dual-channel (dual low-side, dual high-side, or half-bridge) |
| CMTI (Common-Mode Transient Immunity) | — | > 125 V/ns |
| VDD Output Supply Range | — | Up to 25 V |
| Programmable Dead Time | — | Yes |
| Junction Temperature Range | — | -40 C to +150 C |
| Driven Devices | — | Power MOSFET, SiC MOSFET, GaN FET, IGBT |
| Statut RoHS | — | [DATA_NEEDED: RoHS status] |