BGA7L1N6E6327XTSA1 - 728-960MHz LTE LNA, 0.9dB NF | Infineon
N.º de pieza: BGA7L1N6E6327XTSA1 ✓ Activo| Cant. | Precio unitario | Total |
|---|---|---|
| 1 | $0.95 | $0,95 |
| 10 | $0.86 | $8,60 |
| 100 | $0.74 | $74,00 |
| 1.000 | $0.58 | $580,00 |
| 5.000 | $0.49 | $2.450,00 |
| 15.000 | $0.42 | $6.300,00 |
BGA7L1N6E6327XTSA1 Descripción general
An LNA (Low Noise Amplifier) is the first active gain stage in a wireless receiver chain, placed immediately after the antenna and band-select filter. Its function is to amplify extremely weak radio signals captured at the antenna while adding as little noise of its own as possible, thereby setting the receiver's noise floor and overall sensitivity. The BGA7L1N6E6327XTSA1 belongs to the LNA family -> RF amplifier -> RF front-end IC -> wireless transceiver component chain. Its 0.90 dB noise figure directly determines the signal-to-noise ratio at the input of the downstream mixer.
Key differentiating features include a sub-1 dB noise figure of 0.90 dB, 13.3 dB insertion power gain across the operating band, an integrated power-on switch controllable from a 1 V logic GPIO, and a current consumption of 4.4 mA typical. The integrated 50 ohm input and output matching eliminates the need for external discrete matching components, reducing PCB footprint, BOM cost, and design cycle time in mass-market smartphone designs.
Technically the device uses Infineon's high-frequency SiGe:C process technology, which combines low-noise bipolar HBT (heterojunction bipolar transistor) devices with CMOS control logic on the same die. The internal bias network maintains the LNA's noise figure and linearity across supply, temperature and process variations. The on-chip logic-controlled enable pin allows the LNA to be powered down completely during transmit slots in TDD-LTE systems, saving system current.
Typical applications include LTE smartphone and tablet receiver front-ends, cellular IoT modules, 4G USB dongles and mobile hotspots, and diversity antenna chains where two LNAs share a single antenna filter. The device's small TSNP-6-2 leadless package (footprint 0.7 mm x 1.1 mm) enables placement directly adjacent to the antenna switch module.
When designing with this LNA, route the RF input and output traces as 50 ohm controlled-impedance microstrip or coplanar waveguide directly from the package pads to minimise parasitic inductance. Place the supply decoupling capacitor within 1 mm of the VCC pin to suppress noise injection from the DC bus. The 1 V logic-high EN input allows direct connection to modern baseband or PMIC GPIOs without level shifters.
Alternativas directas para BGA7L1N6E6327XTSA1 — mismo encapsulado, compatible pin a pin. Se excluyen las piezas de otro encapsulado que requieren retrabajo de la PCB.
Variantes de esta serie
Modelos de la misma serie compatibles directamente con BGA7L1N6E6327XTSA1 (mismo factor de forma y huella) — difiere en Control Logic, Insertion Power Gain, Package.
Herramienta de comparación rápida — seleccione piezas alternativas para compararlas lado a lado:
BGA7L1BN6E6327XTSA1
✅ Sustitución directa📋 Alternativa de referencia (no en el catálogo)
BGA7L1N6
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BGA7H1N6
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BGA7L1N6E6327XTSA1 Valores máximos y características eléctricas
| Manufacturer | Infineon Technologies |
| Part Number | BGA7L1N6E6327XTSA1 |
| Función | RF Low Noise Amplifier (LNA) MMIC |
| Technology | Silicon Germanium (SiGe) |
| Frequency Range | 728 MHz to 960 MHz |
| Insertion Power Gain | 13.3 dB (typical) |
| Noise Figure | 0.90 dB (typical) |
| Tensión de alimentación | 1.5 V to 3.3 V |
| Corriente de alimentación | 4.4 mA (typical) |
| Control Logic | Digital on/off switch, 1 V logic-high enable |
| Input/Output Impedance | Internally matched to 50 ohm |
| Encapsulado | TSNP-6-2 (PG-TSNP-6-2), 0.7 mm x 1.1 mm |
| Temperatura de funcionamiento | -40 C to +85 C |
| Tipo de montaje | Surface Mount |
| Standard Pack Quantity | 15,000 (reel) |
| Estado RoHS | Compliant |
| Target Application | LTE low-band (700/800/900 MHz) receiver front-end |
Guía de configuración de pines de BGA7L1N6E6327XTSA1 tsnp-6-2 (pg-tsnp-6-2), 0.7 mm x 1.1 mm
Configuración de pines para BGA7L1N6E6327XTSA1 (encapsulado tsnp-6-2 (pg-tsnp-6-2), 0.7 mm x 1.1 mm). Este componente analógico presenta pines de entrada, salida y alimentación. Consulte la hoja de datos del fabricante para conocer las configuraciones de los pines de ajuste de offset, compensación y habilitación. Ideal para circuitos de acondicionamiento de señal y amplificadores.
No hay datos detallados de patillaje disponibles para BGA7L1N6E6327XTSA1.
Consulte la hoja de datos para ver la configuración completa de patillas.
Aplicaciones típicas
BGA7L1N6E6327XTSA1 es adecuado para 6 aplicacións: LTE Smartphone Receiver Front-End, Cellular IoT and M2M Modules, 4G USB Dongles and Mobile Hotspots, Diversity Antenna Chains, Industrial LTE Gateways and Routers, Cellular Signal Boosters and Repeaters.
LTE Smartphone Receiver Front-End
The BGA7L1N6E6327XTSA1 is purpose-built for the low-band LTE receiver path in 4G smartphones and feature phones. Its 0.90 dB noise figure is the dominant contribution to the receiver noise floor at 700-900 MHz and directly determines cell-edge data throughput. The 13.3 dB gain raises the antenna signal above the noise floor of the downstream SAW filter and mixer, while the integrated 50 ohm matching eliminates the discrete inductor/capacitor network normally required, freeing PCB area near the antenna switch module. With 4.4 mA quiescent current and a 1 V logic-high enable pin that allows direct connection to a baseband GPIO, the part supports aggressive power gating during TDD-LTE transmit slots, helping manufacturers hit stringent smartphone battery-life targets.
Recomendado
Cellular IoT and M2M Modules
For LTE Cat-1, Cat-M1 and NB-IoT modules used in smart meters, asset trackers and industrial sensors, the BGA7L1N6E6327XTSA1 provides the sub-1 dB noise figure required to maintain link margin in weak-signal deployments. Its 0.7 mm x 1.1 mm TSNP-6-2 footprint suits the dense layouts typical of small IoT PCBs, and the 1.5 V to 3.3 V supply range allows direct connection to common Li-ion or USB-derived rails. The 4.4 mA quiescent current is acceptable for most battery-powered IoT duty cycles, and the digital enable pin enables aggressive duty-cycling so the average drain drops well below 1 mA when the receiver is off between page cycles.
Recomendado
4G USB Dongles and Mobile Hotspots
Portable 4G USB dongles and Mi-Fi hotspots integrate an antenna, LTE transceiver, PMIC and the BGA7L1N6E6327XTSA1 as the first active receiver stage. The LNA's 13.3 dB gain across 728-960 MHz compensates for the lossy integrated antenna typical in USB form factors, while the 0.90 dB NF ensures that the dongle maintains a usable link at the cell edge. With the entire 700/800/900 MHz band covered in a single part, designers avoid stocking two or three band-specific LNA variants, simplifying the BOM and reducing inventory cost. The integrated matching keeps the dongle PCB to a single high-density layer.
Recomendado
Diversity Antenna Chains
Modern LTE smartphones use a primary and a diversity antenna to improve downlink throughput via MIMO. The BGA7L1N6E6327XTSA1 is well-suited for the secondary (diversity) receive path where two LNAs share the same antenna switch network. Its small TSNP-6-2 footprint allows two parts to be placed within millimetres of each other on the diversity antenna feed, minimising trace length and preserving noise figure. Because both LNAs typically operate simultaneously, the 4.4 mA per-channel current must be budgeted against the phone's thermal envelope, but the digital power-down pin allows one chain to be disabled during low-throughput states.
Recomendado
Industrial LTE Gateways and Routers
Industrial 4G routers, telematics gateways and remote monitoring terminals use the BGA7L1N6E6327XTSA1 to provide reliable low-band LTE connectivity in factories, vehicles and remote installations. The -40 C to +85 C industrial temperature rating allows deployment in uncontrolled environments such as outdoor cabinets, while the 0.90 dB noise figure ensures robust links in weak-signal industrial locations like basements, mines and rural sites. The integrated 50 ohm matching simplifies the RF layout, helping engineers meet EMI/EMC standards without external matching network resonances that could cause certification failures.
Recomendado
Cellular Signal Boosters and Repeaters
Indoor cellular repeaters and signal boosters that re-broadcast the operator's low-band LTE signal within a building use the BGA7L1N6E6327XTSA1 in the donor-antenna receive path. The sub-1 dB NF is critical here because the booster must not degrade the already weak outdoor signal it is trying to amplify. The 13.3 dB gain provides headroom before the downstream SAW filter, and the integrated matching simplifies the donor-antenna filter network design. The digital enable pin allows the booster to power down the LNA during commissioning, easing alignment and reducing standby power in green-building-compliant products.
Recomendado
Resumen de productos recomendados
Datos de referencia de ingeniería para BGA7L1N6E6327XTSA1 — comparación, orientación de diseño e información de cumplimiento.
Guía de selección
Comparación con alternativas
| Parámetro | Este producto | BGA7L1BN6E6327XTSA1 | BGA7L1N6 | BGA7H1N6 |
|---|---|---|---|---|
| Package | TSNP-6-2 (0.7 x 1.1 mm) | TSNP-6-2 (same) | TSNP-6-2 (same) | TSNP-6-2 (same) |
| Brand | Infineon | Infineon | Infineon | Infineon |
| Frequency Range | 728 MHz to 960 MHz | 716 MHz to 960 MHz | 728 MHz to 960 MHz | 1710 MHz to 2690 MHz |
| Supply Voltage | 1.5 V to 3.3 V | 1.5 V to 3.3 V | 1.5 V to 3.3 V | 1.5 V to 3.3 V |
| Supply Current | 4.4 mA | 4.4 mA | 4.4 mA | 4.4 mA |
| Technology | SiGe | SiGe | SiGe | SiGe |
Diferenciadores clave
- Sub-1 dB noise figure with integrated 50 ohm matching (frente a BGA7L1BN6E6327XTSA1)
- Lowest current at 13.3 dB gain for low-band LTE (frente a BGA7H1N6)
- Digital 1 V enable pin for direct baseband control (frente a Discrete LNA transistor implementations)
Notas de diseño
Route the RF input and output traces as 50 ohm controlled-impedance microstrip or coplanar waveguide with ground on the layer directly beneath, keeping trace lengths below 2 mm between the package pads and the next component (SAW filter, antenna switch, or transceiver). Avoid routing the RF traces across any digital bus or noisy supply line - the 0.90 dB NF is sensitive to stray coupling. Place the VCC supply-decoupling capacitor (typically 0.1 uF X7R) within 1 mm of the VCC pad and stitch the ground pad with multiple vias to the main ground plane to provide a low-inductance return path.
The integrated digital enable pin accepts a 1 V logic-high level and can be driven directly from a baseband or PMIC GPIO without level shifting. Drive EN low during TDD-LTE transmit slots and during idle periods to power down the LNA - the on-chip bias network shuts down within microseconds and the supply current collapses to a negligible standby level. For systems that hold the LNA in receive mode continuously, ensure the 4.4 mA current is included in the power budget for thermal and battery-life calculations.
Estimated: a common mistake is treating the TSNP-6-2 package as a generic 6-pin SOT equivalent. The pad layout requires a specific land pattern (0.7 mm x 1.1 mm) defined in the manufacturer datasheet - using a wrong land pattern will cause the part to lift during reflow. Another pitfall is routing the enable trace near the RF input - switching transients from the EN signal can couple into the antenna and raise the effective noise figure by several tenths of a dB. Keep the EN trace short and isolated from RF traces.
Información de cumplimiento
RoHS compliant per Infineon product page. Not AEC-Q100 qualified - select automotive-grade LNA variants for vehicle applications. Standard reel quantity is 15,000 pieces per reel.
