DMC2400UV-7 vs FDD8424H Comparación
Comparación detallada lado a lado de DMC2400UV-7 por Diodes Incorporated y FDD8424H por onsemi. Compare las especificaciones clave, los parámetros eléctricos, el encapsulado, el estado del ciclo de vida, los precios y la disponibilidad para determinar el mejor componente para los requisitos de su diseño.
Diodes Incorporated
DMC2400UV-7 - 20V Complementary N/P MOSFET Array | Diodes Inc
DMC2400UV-7 ✓ Activo
Comparación de especificaciones
| Parámetro | DMC2400UV-7 | FDD8424H |
|---|---|---|
| Marca | Diodes Incorporated | onsemi |
| Categoría | MOSFETs | MOSFETs |
| Estado del ciclo de vida | Activo | Activo |
| Estado del stock | In Stock | In Stock |
| Precio unitario (USD) | $0,14 | $0,39 |
| FET Type | N and P-Channel Complementary Pair | — |
| Drain-to-Source Voltage (Vdss) | 20 V | — |
| Continuous Drain Current (N-Ch) @ 25C | 1.03 A | — |
| Continuous Drain Current (P-Ch) @ 25C | 700 mA | — |
| RDS(on) Max @ VGS=4.5V, Id=200mA | 480 mOhm | — |
| Gate Threshold Voltage (Vgs(th)) | <1 V (low threshold) | — |
| Total Package Power Dissipation | 450 mW | — |
| Capacitancia de entrada | Low (per datasheet) | — |
| Switching Speed | Fast | — |
| Input/Output Leakage | Low | — |
| Temperatura de unión de funcionamiento | -55C to +150C | -55 °C to +150 °C |
| Tipo de montaje | Surface Mount | Surface Mount |
| Encapsulado | SOT-563 | — |
| Configuration | Complementary Pair (N + P) | N-Channel and P-Channel, independent dice |
| Estado RoHS | Compliant | Compliant |
| Manufacturer | — | onsemi (formerly Fairchild Semiconductor) |
| Product Type | — | Dual N-Channel and P-Channel MOSFET |
| Process Technology | — | PowerTrench (advanced trench-gate) |
| Package Type | — | TO-252 (DPAK), surface mount |
| N-Channel VDS (Drain-Source Voltage) | — | 40 V |
| N-Channel Continuous Drain Current | — | 20 A |
| N-Channel RDS(on) max at VGS=10V | — | 24 mΩ |
| P-Channel VDS (Drain-Source Voltage) | — | -40 V |
| P-Channel Continuous Drain Current | — | -20 A |
| P-Channel RDS(on) max at VGS=-10V | — | 54 mΩ |
| Gate Charge N-Ch (Qg) typ at VGS=10V | — | 20 nC |
| Input Capacitance Ciss max | — | 1000 pF |
| Total Power Dissipation (Pd) | — | 1.3 W |
| Gate-Source Voltage (VGS) max | — | ±20 V |
| Sin halógenos | — | Compliant per GlobalSpec listing |
| ECCN | — | EAR99 |