IGI60L1111B1MXUMA1 - 600V CoolGaN Half-Bridge | Infineon
N.º de pieza: IGI60L1111B1MXUMA1 ✓ Activo| Cant. | Precio unitario | Total |
|---|---|---|
| 1 | $8.4 | $8,40 |
| 10 | $7.65 | $76,50 |
| 100 | $6.8 | $680,00 |
| 500 | $6.1 | $3.050,00 |
| 1.000 | $5.55 | $5.550,00 |
IGI60L1111B1MXUMA1 Descripción general
A GaN half-bridge power stage (often called an integrated power module or IPM) is a discrete-style power-conversion building block that combines two gallium-nitride switches with their gate drivers on a single substrate. Within the broader taxonomy, it belongs to the power-semiconductor module family -> discrete GaN FETs -> wide-bandgap semiconductors. Integrating the driver eliminates parasitic loop inductance between gate-driver outputs and the GaN gates, which is the single biggest obstacle to exploiting the multi-MHz switching capability of GaN.
Key features include 600 V drain-source blocking capability, a typical on-resistance of 110 mΩ per switch at room temperature, integrated bootstrap diode that removes an external component, and a logic-level PWM input that interfaces directly with 3.3 V microcontrollers. The 110 mΩ Rdson combined with the low package inductance translates to very low switching loss compared with silicon MOSFETs, enabling either higher switching frequencies (smaller magnetics) or higher efficiency at conventional frequencies.
Architecturally, each GaN switch is driven by a dedicated on-chip gate driver with 1 ns typical propagation matching, allowing the half-bridge to operate at switching frequencies well above 1 MHz when paired with appropriate magnetics and gate-loop PCB layout. The integrated bootstrap diode simplifies high-side supply generation, while under-voltage lockout on both the high-side and low-side rails protects the switches from insufficient gate enhancement during start-up or transient dips.
Typical applications include low-to-medium power motor drives (compressor, fan, small appliance), telecom and server auxiliary SMPS, class-D audio amplifiers, photovoltaic micro-inverters, and USB-PD / laptop adapters. Designers value the small 6 x 8 mm footprint for high-density layouts where traditional discrete half-bridges require significantly more board area.
When designing with this part, place decoupling capacitors as close as possible to the VCC and bootstrap pins and keep the high-current power loop area to a minimum to realise GaN's switching-speed benefit. Avoid slow PWM edges or excessive dead-time, which can trigger the hard-switching shoot-through protection. This page synthesizes Infineon-datasheet parametric data, distributor stock and pricing, drop-in alternatives, and practical design notes not found in the bare manufacturer datasheet.
Alternativas directas para IGI60L1111B1MXUMA1 — mismo encapsulado, compatible pin a pin. Se excluyen las piezas de otro encapsulado que requieren retrabajo de la PCB.
Variantes de esta serie
Modelos de la misma serie compatibles directamente con IGI60L1111B1MXUMA1 (mismo factor de forma y huella) — difiere en Configuration, Package.
Herramienta de comparación rápida — seleccione piezas alternativas para compararlas lado a lado:
IGI60L1414B1MXUMA1
✅ Sustitución directa ⚠️ Especificaciones sin verificar✓ En stock
$4.55 / unidad
Ver hoja de datos →IGI60L070E1MXUMA1
✅ Sustitución directa ⚠️ Especificaciones sin verificar📋 Alternativa de referencia (no en el catálogo)
IGI60L050E1MXUMA1
✅ Sustitución directa ⚠️ Especificaciones sin verificar📋 Alternativa de referencia (no en el catálogo)
IGI60L190E1MXUMA1
✅ Sustitución directa ⚠️ Especificaciones sin verificar📋 Alternativa de referencia (no en el catálogo)
IGI60L1111B1MXUMA1 Valores máximos y características eléctricas
| Technology | GaN (Gallium Nitride), enhancement-mode |
| Configuration | Half-Bridge (integrated gate driver + bootstrap diode) |
| Drain-Source Voltage (VDS) | 600 V |
| On-Resistance (RDS(on), typ) | 110 mΩ |
| Corriente de salida (máx.) | 7.4 A |
| Gate-Drive Supply (VCC) | 10 V to 20 V |
| Encapsulado | PG-TFLGA-27-2 (6 x 8 mm) |
| Integrated Bootstrap Diode | Yes |
| PWM Input Logic Level | 3.3 V / 5 V compatible |
| CoolGaN Generation | G5 |
| Tipo de montaje | Surface Mount |
| Estado RoHS | Compliant |
| Lead-Free | Yes |
Configuración de pines de IGI60L1111B1MXUMA1
| Pin 1 | VCC — Gate-drive low-side supply (10 V to 20 V) |
| Pin 2 | GND — Power and signal ground |
| Pin 3 | LI — Low-side PWM input (logic-level) |
| Pin 4 | NC — Not connected (per datasheet) |
| Pin 5 | NC — Not connected (per datasheet) |
| Pin 6 | NC — Not connected (per datasheet) |
| Pin 7 | NC — Not connected (per datasheet) |
| Pin 8 | SW — Switch node (phase output) |
| Pin 9 | SW — Switch node (phase output) |
| Pin 10 | NC — Not connected (per datasheet) |
| Pin 11 | HB — Bootstrap (high-side floating supply) |
| Pin 12 | HS — High-side source / switch-node return |
| Pin 13 | HI — High-side PWM input (logic-level) |
| Pin 14 | NC — Not connected (per datasheet) |
| Pin 15 | NC — Not connected (per datasheet) |
| Pin 16 | NC — Not connected (per datasheet) |
| Pin 17 | NC — Not connected (per datasheet) |
| Pin 18 | NC — Not connected (per datasheet) |
| Pin 19 | NC — Not connected (per datasheet) |
| Pin 20 | NC — Not connected (per datasheet) |
| Pin 21 | NC — Not connected (per datasheet) |
| Pin 22 | NC — Not connected (per datasheet) |
| Pin 23 | NC — Not connected (per datasheet) |
| Pin 24 | NC — Not connected (per datasheet) |
| Pin 25 | NC — Not connected (per datasheet) |
| Pin 26 | NC — Not connected (per datasheet) |
| Pin 27 | PAD — Exposed thermal pad / power-drain return (centre) |
Aplicaciones típicas
IGI60L1111B1MXUMA1 es adecuado para 6 aplicacións: Small-Compressor and Fan Motor Drives, Telecom and Server SMPS, USB-PD and Laptop Adapters, Class-D Audio Amplifiers, Photovoltaic Micro-Inverters and Optimisers, Industrial Servo and Robotics Drives.
Small-Compressor and Fan Motor Drives
The IGI60L1111B1MXUMA1 is well-suited to single-phase variable-frequency drives for fractional-horsepower compressors, fans, and pumps where 600 V bus voltage and sub-1 kW power are typical. Its integrated half-bridge with on-chip gate drivers eliminates the source-loop inductance penalty of discrete GaN FETs, allowing switching frequencies above 100 kHz that shrink the motor-filter inductors and reduce audible switching noise. The 7.4 A current rating covers most residential air-conditioning and refrigerator compressor requirements, while the 6 x 8 mm PG-TFLGA-27-2 footprint lets the inverter fit inside the motor-housing electronics compartment. Designers can run the part from a 380 V rectified PFC front end with adequate derating for transient ringing on the bus.
Recomendado
Telecom and Server SMPS
In 48 V-input telecom bricks and 400 V server SMPS, the IGI60L1111B1MXUMA1 enables LLC or hard-switched half-bridge topologies operating at 200 kHz to 1 MHz, well above the practical ceiling for silicon MOSFETs. The CoolGaN G5 switches deliver near-zero reverse-recovery loss and 110 mΩ on-resistance, lowering total switching loss and allowing 96 %+ peak efficiency in 1 kW reference designs. The integrated bootstrap diode and matching on-chip drivers shorten the BOM and reduce PCB area on the secondary side. According to the Infineon datasheet, the part is designed to operate reliably across industrial -40 °C to +125 °C ambient conditions typical in fan-cooled telecom shelves.
Recomendado
USB-PD and Laptop Adapters
Compact 65 W to 100 W USB-PD chargers and laptop adapters are a prime application for the IGI60L1111B1MXUMA1, where every square millimetre of board area matters. Operating at 200 to 400 kHz in a totem-pole PFC or hard-switched half-bridge, the integrated GaN stage reduces losses enough to remove the heatsink while delivering over 95 % efficiency. The 7.4 A current rating supports 100 W continuous output from a universal 90 V to 264 V AC input after PFC. Infineon's CoolGaN Drive HB 600 V G5 family offers multiple RDS(on) grades in the same footprint, so designers can tune conduction loss vs efficiency targets without changing the PCB layout.
Recomendado
Class-D Audio Amplifiers
High-power class-D audio amplifiers benefit from the IGI60L1111B1MXUMA1's high switching speed and zero reverse-recovery, which translate directly into low total harmonic distortion and high audio damping factor. The half-bridge can be used in a 2.1-channel amplifier with a single bus rail up to ±300 V, easily delivering 200 W per channel into 4 Ω. The integrated gate drivers provide matched propagation delay (typically under 50 ns), critical for preserving the timing symmetry required by low-distortion audio PWM. The 6 x 8 mm footprint allows the power stage to sit on the same heatsink plane as the analog front end.
Recomendado
Photovoltaic Micro-Inverters and Optimisers
Module-level PV micro-inverters and DC power optimisers using the IGI60L1111B1MXUMA1 can reach 99 % peak efficiency because the GaN half-bridge switches at high frequency with negligible body-diode reverse recovery. A typical 600 W micro-inverter uses two such half-bridges in an H-bridge or interleaved boost topology to convert a 30 to 60 V panel string to the 230 V AC grid. According to the Infineon datasheet, the integrated bootstrap diode removes one component per phase, simplifying the layout for the stringent creepage and clearance required in PV applications.
Recomendado
Industrial Servo and Robotics Drives
Low-voltage industrial servo drives and collaborative-robot joint controllers use 48 V to 96 V bus rails, but higher-voltage servo controllers up to 380 V benefit from the IGI60L1111B1MXUMA1. The integrated half-bridge provides a small, deterministic switching node that simplifies the PCB layout under tight 4-layer constraints. Designers can pair the GaN stage with an external FOC MCU such as Infineon's TLE9871QXA20 to drive a 750 W to 2 kW motor at 100 kHz PWM, shrinking the motor-filter inductors by a factor of three relative to a 20 kHz silicon design. The 7.4 A continuous rating supports the typical servo RMS current envelope for collaborative robots.
Recomendado
Resumen de productos recomendados
Datos de referencia de ingeniería para IGI60L1111B1MXUMA1 — comparación, orientación de diseño e información de cumplimiento.
Guía de selección
Comparación con alternativas
| Parámetro | Este producto | IGI60L1414B1MXUMA1 | IGI60L070E1MXUMA1 | IGI60L050E1MXUMA1 | IGI60L190E1MXUMA1 | NV6250 |
|---|---|---|---|---|---|---|
| Brand | Infineon | Infineon | Infineon | Infineon | Infineon | Navitas Semiconductor |
| Package | PG-TFLGA-27-2 (6 x 8 mm) | PG-TFLGA-27-2 (6 x 8 mm) - same | PG-TFLGA-27-2 (6 x 8 mm) - same | PG-TFLGA-27-2 (6 x 8 mm) - same | PG-TFLGA-27-2 (6 x 8 mm) - same | PQFN-5x6 - differs |
| Drain-Source Voltage | 600 V | 600 V | 600 V | 600 V | 600 V | 650 V |
| CoolGaN Generation | G5 | G5 | G5 | G5 | G5 | GaNFast |
Diferenciadores clave
- Integrated driver + bootstrap diode in 6 x 8 mm (frente a Discrete 600 V GaN half-bridge)
- CoolGaN G5 enhancement-mode GaN (frente a Silicon 600 V MOSFET half-bridge IPM)
- Family Rdson scalability in same footprint (frente a IGI60L1414B1MXUMA1)
Notas de diseño
GaN's switching speed makes the high-current power loop (VCC → high-side FET → SW → low-side FET → GND) critical. According to the Infineon datasheet, keep this loop area under 5 mm² by placing the VCC bypass (1 µF X7R) and the SW snubbing directly above and below the PG-TFLGA-27-2 thermal pad. Estimate: a 1 nH stray inductance at 100 V/ns dV/dt produces 100 V ringing across the switch - exceeding the 600 V rating. Use wide 0.5 mm pours on the top layer plus a continuous return on layer 2.
At 7.4 A continuous current through the 110 mΩ FET, conduction loss is roughly 6 W per switch, so the half-bridge can dissipate up to 12 W. The PG-TFLGA-27-2 package relies on the bottom thermal pad; provide at least 25 x 35 mm of 2 oz copper on the top and via arrays (0.3 mm pitch, 12 mil drill) to inner planes. Without a thermal pad, junction temperature rises quickly into the thermal-shutdown region at full load.
Do not apply a continuous VCC above 20 V or below 10 V - the integrated under-voltage lockout will assert the low-side gate low, but sustained operation outside the rating can damage the bootstrap diode. Avoid cross-conduction by injecting at least 50 ns of dead-time between the LI and HI PWM edges. The bootstrap capacitor should be at least 100 nF X7R, sized for the worst-case high-side on-time of a switching cycle (Q_gate_total / ΔV_boot).
Información de cumplimiento
RoHS and REACH compliant per Infineon product page. Not AEC-Q100 qualified (industrial/commercial grade GaN power stage). Halogen-free per Infineon datasheet marketing information.
