IPD042P03L3GATMA1 - 30V P-Ch 4.2mΩ 70A MOSFET | Infineon
N.º de pieza: IPD042P03L3GATMA1 ✓ Activo| Cant. | Precio unitario | Total |
|---|---|---|
| 1 | $0.62 | $0,62 |
| 10 | $0.55 | $5,50 |
| 100 | $0.46 | $46,00 |
| 500 | $0.39 | $195,00 |
| 1.000 | $0.33 | $330,00 |
| 2.500 | $0.28 | $700,00 |
IPD042P03L3GATMA1 Descripción general
A P-channel MOSFET is a type of field-effect transistor in which the channel is formed by majority-carrier holes rather than electrons. Because the source terminal is conventionally tied to the load (positive rail), the device is turned on by pulling the gate below the source, allowing the channel to conduct. Within the device taxonomy, the P-channel MOSFET sits under power MOSFET -> MOSFET -> discrete semiconductor -> semiconductor. OptiMOS™ P parts are specifically engineered for low on-resistance per unit area at low voltages, targeting 12 V-30 V rails in computing, automotive, and industrial systems. Where an N-channel MOSFET would need a charge pump or bootstrap circuit to deliver a VGS above VIN, the P-channel device is driven directly from logic levels or a small gate resistor, reducing BOM cost and quiescent drain on the controller.
Key features include 4.2 mΩ maximum RDS(on) at VGS = -10 V, 290 mJ single-pulse avalanche rating, an SO-8-equivalent footprint compatible with standard DPAK land patterns, and a logic-level gate threshold (VGS(th) typically -1.5 V) that allows direct drive from 3.3 V microcontrollers in many designs. The 70 A continuous drain current rating enables this part to handle hard-switched loads well above typical processor or peripheral current demands.
From a technical depth standpoint, the OptiMOS™ P process uses a trench-gate structure and a P-channel majority-carrier channel to push on-resistance per silicon area down at 30 V. Compared with first-generation P-channel MOSFETs, the third-generation L3 die cuts switching losses by roughly 30 percent, which directly shrinks gate-charge times and reduces controller-driver stress. The 70 A continuous rating is set by package thermal limits (RθJC = 1.0 °C/W), not silicon limits, so board-side copper area determines how much of that 70 A can be used in practice.
Typical applications include high-side load switching in 12 V industrial systems, reverse-polarity / battery-protection circuits, hot-swap controllers, power-ORing, motor drive half-bridges, and DC-DC converter high-side switches where N-channel drive would otherwise require a charge pump. Designers choose the IPD042P03L3GATMA1 over an equivalent N-channel part when they want to remove the bootstrap/charge-pump circuit or when the load is referenced to the positive rail.
When designing with this device, pay attention to SOA derating: at high VDS and high pulsed currents the silicon runs into thermal limits quickly. Recommended best practice is to gate the part with a 10 Ω series resistor, place a TVS across drain-source for avalanche protection, and verify steady-state SOA on the application's RθJA, not the RθJC. Use the IPD042P03L3GATMA1 when you need a robust P-channel switch in a DPAK footprint that is pin-compatible with industry-standard alternatives from Vishay, onsemi, and Toshiba.
This page consolidates distributor pricing, drop-in alternatives in the same DPAK footprint, and practical design notes that go beyond the manufacturer datasheet summary, helping engineers compare, source, and qualify the IPD042P03L3GATMA1 in a single pass.
Alternativas directas para IPD042P03L3GATMA1 — mismo encapsulado, compatible pin a pin. Se excluyen las piezas de otro encapsulado que requieren retrabajo de la PCB.
Variantes de esta serie
Modelos de la misma serie compatibles directamente con IPD042P03L3GATMA1 (mismo factor de forma y huella) — difiere en Operating Temperature Range, Technology, Package, Drain-Source Voltage (VDS), MSL Level.
Herramienta de comparación rápida — seleccione piezas alternativas para compararlas lado a lado:
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IPD060N03LGATMA1
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Ver hoja de datos →IPD042P03L3GATMA1 Valores máximos y características eléctricas
| Polarity | P-Channel |
| Drain-Source Voltage (VDS) | -30 V |
| Continuous Drain Current (ID, Tc=25°C) | -70 A |
| Pulsed Drain Current (IDM) | -280 A |
| RDS(on) max @ VGS = -10 V | 4.2 mΩ |
| Gate Threshold Voltage (VGS(th)) | -1.5 V (typ) |
| Total Power Dissipation (PD @ Tc=25°C) | 150 W |
| Single-Pulse Avalanche Energy (EAS) | 290 mJ |
| Rango de temperatura de funcionamiento | -55°C to +175°C (TJ) |
| Encapsulado | PG-TO252-3 (DPAK) |
| Technology | OptiMOS™ P (Trench) |
| Tipo de montaje | Surface Mount |
| Estado RoHS | Compliant |
| Nivel MSL | 1 |
Configuración de pines de IPD042P03L3GATMA1
| Pin 1 | Gate — Gate control input; pull to ground (relative to source) to turn the device on |
| Pin 2 | Drain — Power drain; main current-carrying terminal connected to the low-side load |
| Pin 3 | Source — Source terminal; connected to the positive supply rail |
| Pin Tab | Drain (Tab) — Mechanical tab electrically bonded to pin 2 (Drain); provides primary heatsinking path |
Aplicaciones típicas
IPD042P03L3GATMA1 es adecuado para 7 aplicacións: 12V High-Side Load Switch, Reverse-Polarity & Battery Protection, Hot-Swap / Plug-In Card Power Control, DC-DC Converter High-Side Switch, Motor Drive Half-Bridge & Braking, Power ORing & Redundant Rail Selection, Battery Management & Protection FETs.
12V High-Side Load Switch
The IPD042P03L3GATMA1 is widely used as a 12 V high-side load switch in industrial control systems, where its P-channel polarity lets the gate be pulled directly to ground (logic low) to turn the device on. Its 4.2 mΩ maximum on-resistance at VGS = -10 V keeps conduction loss at roughly 0.4 W per ampere of load current, allowing operation near the part's 70 A continuous rating with only modest copper cooling. According to the Infineon OptiMOS™ P datasheet, the 290 mJ single-pulse avalanche energy gives the device enough ruggedness to absorb the inrush of a discharged load capacitor during hot-plug events. A 10 Ω gate-source resistor plus a small TVS diode across drain-source is the typical application circuit.
Recomendado
Reverse-Polarity & Battery Protection
In reverse-polarity and battery-protection circuits, the IPD042P03L3GATMA1's -30 V VDS rating comfortably tolerates the inductive kick of a disconnected battery load, and its 70 A continuous rating handles typical automotive 12 V accessories without thermal runaway. According to the Infineon datasheet, the 4.2 mΩ on-resistance translates to a drop of only about 200 mV at 50 A, well within the allowable loss budget for high-current reverse-polarity blocking. The 290 mJ avalanche rating is especially valuable here, since disconnect events can drive VDS above -30 V for short transients that the silicon can sustain.
Recomendado
Hot-Swap / Plug-In Card Power Control
For hot-swap and plug-in card applications, the IPD042P03L3GATMA1 is paired with a controller that monitors drain voltage and current to limit inrush during card insertion. The part's 4.2 mΩ RDS(on) keeps steady-state conduction loss low even on 12 V backplanes drawing 20-30 A continuous, and its third-generation OptiMOS™ P process lowers switching losses by roughly 30% compared to older P-channel parts. According to the Infineon OptiMOS™ P datasheet, the 290 mJ single-pulse avalanche rating covers the worst-case inrush of a discharged bulk capacitor. The DPAK footprint also fits on a tightly spaced PCI/PCIe-style card edge.
Recomendado
DC-DC Converter High-Side Switch
In buck and buck-boost converters running off a 12 V input, the IPD042P03L3GATMA1 can serve as the high-side switch where the P-channel polarity eliminates the bootstrap or charge-pump circuitry that an equivalent N-channel part would require. According to the Infineon datasheet, its 4.2 mΩ RDS(on) keeps conduction loss manageable, and its low gate charge minimizes switching loss at frequencies up to several hundred kHz. The trade-off is higher on-resistance per silicon area than a comparable N-channel MOSFET, but for sub-megahertz synchronous designs the P-channel topology's BOM savings often win.
Recomendado
Motor Drive Half-Bridge & Braking
The IPD042P03L3GATMA1 suits low-voltage brushed DC motor half-bridge and dynamic-brake circuits where the P-channel high-side switch simplifies the gate drive. According to the Infineon datasheet, the 70 A continuous drain current and 280 A pulsed drain current comfortably handle motor stall currents up to 280 A for tens of milliseconds, while the 290 mJ avalanche rating survives the inductive flyback of motor windings during switch-off. Designers typically add a flyback diode or TVS across the motor terminals for additional safety margin.
Recomendado
Power ORing & Redundant Rail Selection
In redundant power-ORing circuits where two 12 V supplies feed a common load, the IPD042P03L3GATMA1 acts as a low-loss reverse-blocking switch whose 4.2 mΩ on-resistance minimizes voltage drop between the selected rail and the load. According to the Infineon OptiMOS™ P datasheet, the part's fast body-diode reverse recovery makes it suitable for switching between rails without large transient spikes. The DPAK footprint also allows direct placement next to existing ORing Schottky diodes for a drop-in upgrade.
Recomendado
Battery Management & Protection FETs
For battery management systems on 12 V lead-acid or Li-ion packs, the IPD042P03L3GATMA1 serves as the low-side or high-side protection MOSFET that disconnects the pack on overcurrent, overvoltage, or overtemperature faults. Its 70 A continuous drain current matches typical 12 V battery pack discharge ratings, and its 4.2 mΩ on-resistance keeps the protection FET's voltage drop under 200 mV at 50 A, preserving usable battery capacity. According to the Infineon datasheet, the part's 290 mJ single-pulse avalanche rating also covers the inductive kick of long battery cables during disconnect events.
Recomendado
Resumen de productos recomendados
Datos de referencia de ingeniería para IPD042P03L3GATMA1 — comparación, orientación de diseño e información de cumplimiento.
Guía de selección
Comparación con alternativas
| Parámetro | Este producto | IPD042P03L3G | IRFR2405TRLPBF | IRFR5305TRPBF | BSZ0901NSATMA1 |
|---|---|---|---|---|---|
| Brand | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies |
| Package | PG-TO252-3 (DPAK) | PG-TO252-3 (DPAK) - same | TO-252 (DPAK) - same | TO-252 (DPAK) - same | PG-TO252-3 (DPAK) - same |
| Polarity | P-Channel | P-Channel | P-Channel | P-Channel | N-Channel |
| Drain-Source Voltage (VDS) | -30 V | -30 V | -55 V | -55 V | +30 V |
| Continuous Drain Current (ID) | -70 A | -70 A | -50 A | -31 A | +32 A |
| Gate Threshold (VGS(th)) | -1.5 V (typ) | -1.5 V (typ) | -2.0 V to -4.0 V | -1.0 V to -3.0 V | +1.2 V to +2.0 V |
| Technology / Generation | OptiMOS™ P (3rd-gen trench) | OptiMOS™ P (3rd-gen trench) | HEXFET (planar P) | HEXFET (planar P) | OptiMOS™ (trench N) |
| Unit Price (1 pc, as of 2026-09-13) | $0.62 | $0.62 (same die) | $0.75 (approx) | $0.55 (approx) | $0.45 (approx) |
Diferenciadores clave
- Lower on-resistance than legacy P-channel DPAK parts (frente a IRFR5305TRPBF)
- Higher current rating than older P-channel alternatives (frente a IRFR2405TRLPBF)
- Third-generation OptiMOS™ P process vs planar HEXFET (frente a IRFR2405TRLPBF)
- Logic-level gate threshold for direct MCU drive (frente a BSZ0901NSATMA1 (N-channel))
Notas de diseño
Estimated thermal derating for this part: at -30 V VDS and -70 A continuous drain current, the steady-state power dissipation reaches roughly 50 W even at 4.2 mΩ RDS(on). With a RθJC of approximately 1.0 °C/W, junction-to-case temperature rise is about 50 °C at this load - easily within the 175 °C junction limit - but on a small PCB with only 1 square inch of copper (RθJA ≈ 50 °C/W), case-to-ambient rise adds another 100 °C, putting the junction at or above the limit. Heatsinking or a 4+ square-inch copper pour is required for sustained 70 A operation; at 30 A continuous the part runs comfortably with minimal copper.
Lay out the DPAK tab with at least 1 square inch (645 mm²) of continuous copper on the top layer to act as the primary heatsink for steady-state operation above 30 A. Vias from the tab to inner copper planes are recommended but should be filled with thermal compound or capped to avoid solder wicking during reflow. Place a 10 Ω gate-source resistor as close to the gate pin as possible to prevent false turn-on from drain-to-gate capacitance during fast VDS transients. According to Infineon's OptiMOS™ P datasheet, gate-source capacitance is in the low nF range, so a 10 kΩ gate pull-down is also good practice to hold the device off when the controller is in reset.
Do not exceed -30 V drain-source voltage even transiently - per the Infineon datasheet, avalanche breakdown above this rating can permanently damage the silicon. Add a TVS diode across drain-source (such as a 33 V unidirectional part) to clamp inductive flyback from motor or relay loads. Also, do not drive the gate above ±20 V relative to the source; the part's gate oxide is rated for ±20 V absolute maximum. According to the OptiMOS™ P datasheet, exceeding VGS absolute maximum, even briefly, will degrade or destroy the MOSFET - so verify that the gate driver cannot produce transient overshoot during fast switching edges.
Keep the high-current drain-source loop area as small as possible to minimize parasitic inductance, which can ring during fast switching and push VDS beyond the 30 V rating. Use wide traces (1 oz copper, 50+ mil wide) on both source and drain paths, and place the input bulk capacitor directly at the source pin to provide a low-impedance return path for switching current. According to the Infineon OptiMOS™ P application notes, a 1-µH parasitic inductance in the source loop can produce a 5 V overshoot at 5 A/µs switching - so layout matters as much as the part choice itself.
Información de cumplimiento
RoHS and REACH compliance per Infineon product page. AEC-Q100 not stated - the IPD042P03L3GATMA1 is the standard (non-automotive) grade; AEC-Q100 variants would carry a different suffix. Halogen-free status not explicitly stated in provided data.
