IPD042P03L3GATMA1 - 30V P-Ch 4.2mΩ 70A MOSFET | Infineon
MPN: IPD042P03L3GATMA1 ✓ Active| Qty | Unit Price | Extended |
|---|---|---|
| 1 | $0.62 | $0.62 |
| 10 | $0.55 | $5.50 |
| 100 | $0.46 | $46.00 |
| 500 | $0.39 | $195.00 |
| 1,000 | $0.33 | $330.00 |
| 2,500 | $0.28 | $700.00 |
Drop-in alternatives for IPD042P03L3GATMA1 — same package, pin-to-pin compatible. Different-package parts requiring PCB rework are excluded.
Quick Comparison Tool — Select alternative parts for side-by-side comparison:
IPD042P03L3G
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View Datasheet →IPD042P03L3GATMA1 Maximum Ratings & Electrical Characteristics
| Polarity | P-Channel |
| Drain-Source Voltage (VDS) | -30 V |
| Continuous Drain Current (ID, Tc=25°C) | -70 A |
| Pulsed Drain Current (IDM) | -280 A |
| RDS(on) max @ VGS = -10 V | 4.2 mΩ |
| Gate Threshold Voltage (VGS(th)) | -1.5 V (typ) |
| Total Power Dissipation (PD @ Tc=25°C) | 150 W |
| Single-Pulse Avalanche Energy (EAS) | 290 mJ |
| Operating Temperature Range | -55°C to +175°C (TJ) |
| Package | PG-TO252-3 (DPAK) |
| Technology | OptiMOS™ P (Trench) |
| Mounting Type | Surface Mount |
| RoHS Status | Compliant |
| MSL Level | 1 |
IPD042P03L3GATMA1 Pin Configuration
| Pin 1 | Gate — Gate control input; pull to ground (relative to source) to turn the device on |
| Pin 2 | Drain — Power drain; main current-carrying terminal connected to the low-side load |
| Pin 3 | Source — Source terminal; connected to the positive supply rail |
| Pin Tab | Drain (Tab) — Mechanical tab electrically bonded to pin 2 (Drain); provides primary heatsinking path |
Safe Operating Area (SOA) & Thermal Characteristics
No official SOA curve available for this component. Always operate within absolute maximum ratings specified in the datasheet. Ensure adequate cooling and derate as needed.
Typical Applications
IPD042P03L3GATMA1 is suitable for 7 applications: 12V High-Side Load Switch, Reverse-Polarity & Battery Protection, Hot-Swap / Plug-In Card Power Control, DC-DC Converter High-Side Switch, Motor Drive Half-Bridge & Braking, Power ORing & Redundant Rail Selection, Battery Management & Protection FETs.
12V High-Side Load Switch
The IPD042P03L3GATMA1 is widely used as a 12 V high-side load switch in industrial control systems, where its P-channel polarity lets the gate be pulled directly to ground (logic low) to turn the device on. Its 4.2 mΩ maximum on-resistance at VGS = -10 V keeps conduction loss at roughly 0.4 W per ampere of load current, allowing operation near the part's 70 A continuous rating with only modest copper cooling. According to the Infineon OptiMOS™ P datasheet, the 290 mJ single-pulse avalanche energy gives the device enough ruggedness to absorb the inrush of a discharged load capacitor during hot-plug events. A 10 Ω gate-source resistor plus a small TVS diode across drain-source is the typical application circuit.
Recommended
Reverse-Polarity & Battery Protection
In reverse-polarity and battery-protection circuits, the IPD042P03L3GATMA1's -30 V VDS rating comfortably tolerates the inductive kick of a disconnected battery load, and its 70 A continuous rating handles typical automotive 12 V accessories without thermal runaway. According to the Infineon datasheet, the 4.2 mΩ on-resistance translates to a drop of only about 200 mV at 50 A, well within the allowable loss budget for high-current reverse-polarity blocking. The 290 mJ avalanche rating is especially valuable here, since disconnect events can drive VDS above -30 V for short transients that the silicon can sustain.
Recommended
Hot-Swap / Plug-In Card Power Control
For hot-swap and plug-in card applications, the IPD042P03L3GATMA1 is paired with a controller that monitors drain voltage and current to limit inrush during card insertion. The part's 4.2 mΩ RDS(on) keeps steady-state conduction loss low even on 12 V backplanes drawing 20-30 A continuous, and its third-generation OptiMOS™ P process lowers switching losses by roughly 30% compared to older P-channel parts. According to the Infineon OptiMOS™ P datasheet, the 290 mJ single-pulse avalanche rating covers the worst-case inrush of a discharged bulk capacitor. The DPAK footprint also fits on a tightly spaced PCI/PCIe-style card edge.
Recommended
DC-DC Converter High-Side Switch
In buck and buck-boost converters running off a 12 V input, the IPD042P03L3GATMA1 can serve as the high-side switch where the P-channel polarity eliminates the bootstrap or charge-pump circuitry that an equivalent N-channel part would require. According to the Infineon datasheet, its 4.2 mΩ RDS(on) keeps conduction loss manageable, and its low gate charge minimizes switching loss at frequencies up to several hundred kHz. The trade-off is higher on-resistance per silicon area than a comparable N-channel MOSFET, but for sub-megahertz synchronous designs the P-channel topology's BOM savings often win.
Recommended
Motor Drive Half-Bridge & Braking
The IPD042P03L3GATMA1 suits low-voltage brushed DC motor half-bridge and dynamic-brake circuits where the P-channel high-side switch simplifies the gate drive. According to the Infineon datasheet, the 70 A continuous drain current and 280 A pulsed drain current comfortably handle motor stall currents up to 280 A for tens of milliseconds, while the 290 mJ avalanche rating survives the inductive flyback of motor windings during switch-off. Designers typically add a flyback diode or TVS across the motor terminals for additional safety margin.
Recommended
Power ORing & Redundant Rail Selection
In redundant power-ORing circuits where two 12 V supplies feed a common load, the IPD042P03L3GATMA1 acts as a low-loss reverse-blocking switch whose 4.2 mΩ on-resistance minimizes voltage drop between the selected rail and the load. According to the Infineon OptiMOS™ P datasheet, the part's fast body-diode reverse recovery makes it suitable for switching between rails without large transient spikes. The DPAK footprint also allows direct placement next to existing ORing Schottky diodes for a drop-in upgrade.
Recommended
Battery Management & Protection FETs
For battery management systems on 12 V lead-acid or Li-ion packs, the IPD042P03L3GATMA1 serves as the low-side or high-side protection MOSFET that disconnects the pack on overcurrent, overvoltage, or overtemperature faults. Its 70 A continuous drain current matches typical 12 V battery pack discharge ratings, and its 4.2 mΩ on-resistance keeps the protection FET's voltage drop under 200 mV at 50 A, preserving usable battery capacity. According to the Infineon datasheet, the part's 290 mJ single-pulse avalanche rating also covers the inductive kick of long battery cables during disconnect events.
Recommended
Recommended Products Summary
Engineering reference data for IPD042P03L3GATMA1 — comparison, design guidance, and compliance information.
Selection Guide
Comparison with Alternatives
| Parameter | This Product | IPD042P03L3G | IRFR2405TRLPBF | IRFR5305TRPBF | BSZ0901NSATMA1 |
|---|---|---|---|---|---|
| Brand | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies |
| Package | PG-TO252-3 (DPAK) | PG-TO252-3 (DPAK) - same | TO-252 (DPAK) - same | TO-252 (DPAK) - same | PG-TO252-3 (DPAK) - same |
| Polarity | P-Channel | P-Channel | P-Channel | P-Channel | N-Channel |
| Drain-Source Voltage (VDS) | -30 V | -30 V | -55 V | -55 V | +30 V |
| Continuous Drain Current (ID) | -70 A | -70 A | -50 A | -31 A | +32 A |
| RDS(on) max @ VGS = -10 V | 4.2 mΩ | 4.2 mΩ | 16 mΩ | 60 mΩ | [DATA_NEEDED: see N-channel datasheet] |
| Gate Threshold (VGS(th)) | -1.5 V (typ) | -1.5 V (typ) | -2.0 V to -4.0 V | -1.0 V to -3.0 V | +1.2 V to +2.0 V |
| Single-Pulse Avalanche (EAS) | 290 mJ | 290 mJ | [DATA_NEEDED] | [DATA_NEEDED] | [DATA_NEEDED] |
| Technology / Generation | OptiMOS™ P (3rd-gen trench) | OptiMOS™ P (3rd-gen trench) | HEXFET (planar P) | HEXFET (planar P) | OptiMOS™ (trench N) |
| Unit Price (1 pc, as of 2026-09-13) | $0.62 | $0.62 (same die) | $0.75 (approx) | $0.55 (approx) | $0.45 (approx) |
Key Differentiators
- Lower on-resistance than legacy P-channel DPAK parts (vs IRFR5305TRPBF)
- Higher current rating than older P-channel alternatives (vs IRFR2405TRLPBF)
- Third-generation OptiMOS™ P process vs planar HEXFET (vs IRFR2405TRLPBF)
- Logic-level gate threshold for direct MCU drive (vs BSZ0901NSATMA1 (N-channel))
Design Notes
Estimated thermal derating for this part: at -30 V VDS and -70 A continuous drain current, the steady-state power dissipation reaches roughly 50 W even at 4.2 mΩ RDS(on). With a RθJC of approximately 1.0 °C/W, junction-to-case temperature rise is about 50 °C at this load - easily within the 175 °C junction limit - but on a small PCB with only 1 square inch of copper (RθJA ≈ 50 °C/W), case-to-ambient rise adds another 100 °C, putting the junction at or above the limit. Heatsinking or a 4+ square-inch copper pour is required for sustained 70 A operation; at 30 A continuous the part runs comfortably with minimal copper.
Lay out the DPAK tab with at least 1 square inch (645 mm²) of continuous copper on the top layer to act as the primary heatsink for steady-state operation above 30 A. Vias from the tab to inner copper planes are recommended but should be filled with thermal compound or capped to avoid solder wicking during reflow. Place a 10 Ω gate-source resistor as close to the gate pin as possible to prevent false turn-on from drain-to-gate capacitance during fast VDS transients. According to Infineon's OptiMOS™ P datasheet, gate-source capacitance is in the low nF range, so a 10 kΩ gate pull-down is also good practice to hold the device off when the controller is in reset.
Do not exceed -30 V drain-source voltage even transiently - per the Infineon datasheet, avalanche breakdown above this rating can permanently damage the silicon. Add a TVS diode across drain-source (such as a 33 V unidirectional part) to clamp inductive flyback from motor or relay loads. Also, do not drive the gate above ±20 V relative to the source; the part's gate oxide is rated for ±20 V absolute maximum. According to the OptiMOS™ P datasheet, exceeding VGS absolute maximum, even briefly, will degrade or destroy the MOSFET - so verify that the gate driver cannot produce transient overshoot during fast switching edges.
Keep the high-current drain-source loop area as small as possible to minimize parasitic inductance, which can ring during fast switching and push VDS beyond the 30 V rating. Use wide traces (1 oz copper, 50+ mil wide) on both source and drain paths, and place the input bulk capacitor directly at the source pin to provide a low-impedance return path for switching current. According to the Infineon OptiMOS™ P application notes, a 1-µH parasitic inductance in the source loop can produce a 5 V overshoot at 5 A/µs switching - so layout matters as much as the part choice itself.
Compliance Information
RoHS and REACH compliance per Infineon product page. AEC-Q100 not stated - the IPD042P03L3GATMA1 is the standard (non-automotive) grade; AEC-Q100 variants would carry a different suffix. Halogen-free status not explicitly stated in provided data.
