IRF7306TRPBF vs IRF7416TRPBF Comparación
Comparación detallada lado a lado de IRF7306TRPBF por Infineon y IRF7416TRPBF por Infineon. Compare las especificaciones clave, los parámetros eléctricos, el encapsulado, el estado del ciclo de vida, los precios y la disponibilidad para determinar el mejor componente para los requisitos de su diseño.
Comparación de especificaciones
| Parámetro | IRF7306TRPBF | IRF7416TRPBF |
|---|---|---|
| Marca | Infineon | Infineon |
| Categoría | MOSFETs | MOSFETs |
| Estado del ciclo de vida | Activo | Activo |
| Estado del stock | In Stock | In Stock |
| Precio unitario (USD) | $0,55 | $0,32 |
| Polarity | P-Channel (dual) | — |
| Number of Channels | 2 (independent, in single package) | — |
| Drain-to-Source Voltage (VDS) | -30 V | -30 V |
| Continuous Drain Current (ID) | -3.6 A at 25°C | — |
| On-Resistance RDS(on) max | 100 mOhm at VGS = -10 V | — |
| Gate Threshold Voltage VGS(th) | [DATA_NEEDED: VGS(th) typical/min/max] | — |
| Total Gate Charge Qg | [DATA_NEEDED: Qg total] | — |
| Maximum Power Dissipation | 2 W at TA = 25°C | — |
| Technology | HEXFET Power MOSFET (Generation V) | HEXFET (IR MOSFET) |
| Rango de temperatura de funcionamiento | -55°C to +150°C (junction) | — |
| Encapsulado | 8-SOIC (SO-8, 0.154 inch / 3.90 mm body width) | 8-SO (SOIC-8) |
| Tipo de montaje | Surface Mount | Surface Mount |
| Packaging | Tape & Reel (TR) | — |
| Nivel MSL | 1 (per JEDEC J-STD-020) | 1 (unlimited) |
| RoHS Compliance | Yes (PBF suffix indicates Pb-free) | — |
| Qualification | Consumer market qualification standards (per IR/Infineon datasheet) | — |
| Avalanche Rated | Yes (ruggedized device per datasheet) | — |
| FET Type | — | P-Channel |
| Continuous Drain Current (ID) at TA=25C | — | -10 A |
| Pulsed Drain Current (IDM) | — | -50 A |
| Static Drain-to-Source On-Resistance (RDS(on)) max | — | 20 mOhm at VGS = -10 V |
| Gate-to-Source Voltage (VGS) max | — | [DATA_NEEDED: VGS max rating] |
| Gate Threshold Voltage (VGS(th)) | — | -1 V to -3 V |
| Total Gate Charge (Qg) | — | 61 nC |
| Power Dissipation (PD) max at TA=25C | — | 2.5 W |
| Thermal Resistance, Junction-to-Ambient (RthJA) | — | 50 C/W |
| Rango de temperatura de unión de funcionamiento | — | -55 C to +150 C |
| Estado RoHS | — | Compliant |
| Lead-Free | — | Yes |