IRF8736PBF - 30V 18A N-Channel HEXFET MOSFET SO-8 | Infineon
MPN: IRF8736PBF ✓ Active| Qty | Unit Price | Extended |
|---|---|---|
| 1 | $1.42 | $1.42 |
| 10 | $1.18 | $11.80 |
| 100 | $0.92 | $92.00 |
| 500 | $0.74 | $370.00 |
| 1,000 | $0.58 | $580.00 |
| 3,000 | $0.45 | $1,350.00 |
Drop-in alternatives for IRF8736PBF — same package, pin-to-pin compatible. Different-package parts requiring PCB rework are excluded.
Quick Comparison Tool — Select alternative parts for side-by-side comparison:
IRF8736TRPBF
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IRF8736PBF Maximum Ratings & Electrical Characteristics
| Polarity / Channel Type | N-Channel |
| Drain-Source Voltage (VDS) | 30 V |
| Continuous Drain Current (ID) at TA=25°C | 18 A |
| On-Resistance RDS(on) at VGS=10V | 4.8 mΩ |
| On-Resistance RDS(on) at VGS=4.5V | 6.0 mΩ (typical) |
| Gate-Source Threshold Voltage VGS(th) | Logic-level (optimized for 5 V drive) |
| Total Gate Charge Qg | 17 nC (typical) |
| Maximum Power Dissipation at TA=25°C | 2.5 W |
| Operating Temperature Range | -55°C to +150°C (junction) |
| Package | SO-8 (8-SO) |
| Mounting Type | Surface Mount |
| MSL Level | 1 (Unlimited) |
| RoHS / Lead-Free | Lead-Free, RoHS3 Compliant |
| Qualification Standard | JEDEC |
| Avalanche Rated | Yes (fully characterized avalanche voltage and current) |
IRF8736PBF Pin Configuration
| Pin 1 | S — Source (internally connected to pins 2 and 3) |
| Pin 2 | S — Source (internally connected to pins 1 and 3) |
| Pin 3 | S — Source (internally connected to pins 1 and 2) |
| Pin 4 | G — Gate |
| Pin 5 | D — Drain (internally connected to pins 6, 7, 8 and exposed tab) |
| Pin 6 | D — Drain (internally connected to pins 5, 7, 8 and exposed tab) |
| Pin 7 | D — Drain (internally connected to pins 5, 6, 8 and exposed tab) |
| Pin 8 | D — Drain (internally connected to pins 5, 6, 7 and exposed tab) |
Safe Operating Area (SOA) & Thermal Characteristics
No official SOA curve available for this component. Always operate within absolute maximum ratings specified in the datasheet. Ensure adequate cooling and derate as needed.
Typical Applications
IRF8736PBF is suitable for 6 applications: Notebook CPU/GPU VRM Synchronous Buck, Isolated DC-DC Converter Synchronous Rectifier, Hot-Swap / Load Switch on 12V Distribution, Battery Protection and OR-ing in Battery Packs, Motor Drive Low-Side Switch (Brushless DC), Point-of-Load (POL) Buck Converter Output Stage.
Notebook CPU/GPU VRM Synchronous Buck
The IRF8736PBF is widely used as the low-side synchronous MOSFET in 2- to 4-phase buck converters powering notebook CPU and GPU cores. Its 4.8 mΩ RDS(on) at VGS=10V keeps conduction loss below 0.5 W per device at 10 A load, while the 17 nC Qg minimizes switching losses at 300-500 kHz switching frequencies typical of modern VRMs. Compared to a Schottky-diode rectifier, the IRF8736PBF improves efficiency by 4-6% per phase. Engineers typically pair it with a smaller high-side control FET (e.g., IRF7807) and place it on the bottom of the SO-8 footprint for direct heat-sinking through the drain tab. The logic-level gate threshold allows direct 5 V PWM drive from most notebook controller ICs without a gate-drive IC.
Recommended
Isolated DC-DC Converter Synchronous Rectifier
In isolated half-bridge and forward converters used in networking and telecom equipment, the IRF8736PBF serves as the secondary-side synchronous rectifier replacing lossy Schottky diodes. The 30 V drain rating accommodates 12 V and 24 V output rails with adequate transient headroom for transformer ringing, while 4.8 mΩ RDS(on) reduces conduction loss to roughly 60% of equivalent diode losses at 10 A load. The 17 nC total gate charge keeps drive losses low even at 200 kHz switching. Its full avalanche characterization ensures survival during momentary body-diode conduction in dead-time transitions. PCB layout places the SO-8 on the bottom copper layer with the drain tab thermally bonded to a 1 in² copper pour.
Recommended
Hot-Swap / Load Switch on 12V Distribution
The IRF8736PBF can be used as a low-side hot-swap switch or electronic fuse on 12 V distribution rails, with the gate driven by a hot-swap controller that ramps VGS to limit inrush current. Its 18 A continuous current rating covers most blade-server and router distribution loads, while 30 V VDS handles 12 V nominal with margin for transients. The fully characterized avalanche rating provides robustness during turn-off of inductive loads. A typical circuit uses a current-sense resistor in series with the source to drive the controller's IMON input, with the IRF8736PBF sized for either low-loss always-on paths or pulsed gate-control paths in power-ORing topologies.
Recommended
Battery Protection and OR-ing in Battery Packs
In multi-cell Li-ion battery packs, the IRF8736PBF can serve as a low-side disconnect switch or as an OR-ing MOSFET in redundant battery architectures. The logic-level gate threshold allows direct drive from a fuel-gauge microcontroller at 3.3 V or 5 V, simplifying the protection circuit. The low 4.8 mΩ RDS(on) minimizes voltage drop during high-discharge pulses, preserving battery runtime. The SO-8 footprint is compatible with wave-solder and standard reflow profiles, easing manufacturing of battery-pack BMS boards. Design verification should confirm body-diode reverse recovery is acceptable for the chosen switching frequency.
Recommended
Motor Drive Low-Side Switch (Brushless DC)
For low-voltage brushless DC motor drives (cordless tools, robotics, small appliances), the IRF8736PBF works as a low-side switch per phase in a 3-phase bridge, paired with P-channel or N-channel high-side devices. Its 18 A continuous rating covers most sub-100 W motors, and 30 V VDS gives ample margin for 24 V motor bus rails. The 17 nC Qg is suitable for PWM frequencies up to 50 kHz, supporting smooth torque control. The fully characterized avalanche rating protects against flyback events when commutating inductive motor windings. Engineers should size the gate-drive resistor to limit ringing and confirm SOA at peak motor-startup currents.
Recommended
Point-of-Load (POL) Buck Converter Output Stage
The IRF8736PBF suits 5 V and 3.3 V POL converters on motherboards and industrial control boards where space is constrained and efficiency matters. As the synchronous rectifier, its 4.8 mΩ RDS(on) at VGS=10V limits conduction loss to roughly 0.4 W at 10 A load, allowing the SO-8 to stay within its 2.5 W thermal budget on standard 1 oz copper. Logic-level gate drive eliminates the need for a charge-pump or bootstrap drive IC, reducing BOM cost. The IRF8736PBF is well paired with low-side Schottky-free synchronous control where the body-diode forward drop is acceptable for short dead-time intervals. For higher currents, two IRF8736PBF can be paralleled.
Recommended
Recommended Products Summary
Engineering reference data for IRF8736PBF — comparison, design guidance, and compliance information.
Selection Guide
Comparison with Alternatives
| Parameter | This Product | IRF8736TRPBF | IRF7832TRPBF | NTTFS4939NTAG | AO4407A | Si4401DDY-T1-GE3 |
|---|---|---|---|---|---|---|
| Brand | Infineon | Infineon | Infineon | onsemi | Alpha & Omega Semiconductor | Vishay |
| Package | SO-8 | SO-8 - same | SO-8 - same | SO-8 - same | SO-8 - same | SO-8 - same |
| Drain-Source Voltage (VDS) | 30 V | 30 V | 30 V | 30 V | 30 V | 30 V |
| Continuous Drain Current (ID, TA=25°C) | 18 A | 18 A | 20 A | 16 A | 12 A | 15 A |
| RDS(on) at VGS=10V | 4.8 mΩ | 4.8 mΩ | 6.5 mΩ | 5.2 mΩ | 6.0 mΩ | 5.5 mΩ |
| RDS(on) at VGS=4.5V | 6.0 mΩ (typ) | 6.0 mΩ | [DATA_NEEDED] | 7.0 mΩ | 8.5 mΩ | 8.0 mΩ |
| Total Gate Charge Qg | 17 nC | 17 nC | 23 nC | 19 nC | 21 nC | 20 nC |
| Logic-Level Gate Drive | Yes (optimized for 5V) | Yes | Yes | Yes | Yes | Yes |
| Avalanche Rated | Yes (fully characterized) | Yes | Yes | Yes | Yes | Yes |
Key Differentiators
- Lower on-resistance than comparable SO-8 alternatives (vs IRF7832TRPBF)
- Wider Infineon HEXFET ecosystem with proven JEDEC qualification (vs AO4407A)
- Fully characterized avalanche voltage and current (vs Si4401DDY-T1-GE3)
Design Notes
Estimated: At ID=10 A and RDS(on)=4.8 mΩ, conduction loss is I²R = 0.48 W. On the datasheet 1 in² copper pad the SO-8 thermal resistance is roughly 50°C/W (datasheet 'When mounted on 1 inch square copper board'), giving a junction-temperature rise of ~24°C above ambient. For continuous 18 A operation, ensure at least 1 oz copper area of 1 square inch plus thermal vias to inner planes. Without this copper area, the device will derate to under 1 A continuous due to its small SO-8 die.
Place the SO-8 drain tab on a continuous copper pour on the top or bottom layer with thermal vias to inner planes. Keep the source-sense and gate-drive traces short and away from the drain switching node to minimize dv/dt-induced gate ringing. A gate-drive resistor of 10-22 Ω dampens ringing; add a 10 kΩ gate-source pull-down to keep the device off during controller power-up. Minimize the high-side-to-low-side switching-loop area to reduce inductive ringing on the SW node.
Do not assume the SO-8 MOSFET can handle 18 A on any board - the 2.5 W dissipation rating only applies on the 1 in² reference copper pad. Always calculate conduction loss (I²R) and verify thermal rise against junction-to-ambient resistance. Logic-level gate threshold (VGS(th)) is typically 1.0-2.5 V; confirm the controller's VOH at the gate pin exceeds VGS(th) by at least 1 V at full load to ensure full enhancement. Avoid exceeding VGS=±20 V absolute maximum.
The IRF8736PBF switches in 10-30 ns typical transition times, generating dv/dt up to 5 V/ns on the SW node. Keep the gate-drive loop area under 0.5 in² to avoid parasitic inductance that causes gate-oscillation and possible shoot-through. Place a 1-10 Ω gate resistor near the gate pin to dampen RLC ringing. For high-side drive, use a bootstrap capacitor sized at 10x Qg to maintain proper gate-drive voltage during the high-side on-time.
Compliance Information
RoHS3 compliant and lead-free per PartGenie compliance summary. MSL 1 (unlimited floor life). Not AEC-Q100 qualified - this part targets consumer/notebook market per Infineon qualification standard. JEDEC-qualified.
