IRFB52N15DPBF - 150V 51A N-Channel HEXFET MOSFET | Infineon
N.º de pieza: IRFB52N15DPBF ✓ Activo| Cant. | Precio unitario | Total |
|---|---|---|
| 1 | $2.85 | $2,85 |
| 10 | $2.52 | $25,20 |
| 100 | $2.18 | $218,00 |
| 500 | $1.89 | $945,00 |
| 1.000 | $1.65 | $1.650,00 |
IRFB52N15DPBF Descripción general
A power MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) is the dominant switching element in modern power electronics, sitting one level above BJTs in the switch-mode power conversion hierarchy. Within the MOSFET family, N-channel enhancement-mode devices like the IRFB52N15DPBF are the workhorses of high-side and low-side switching because their higher electron mobility yields lower RDS(on) per unit silicon area than equivalent P-channel parts. The HEXFET process is Infineon's (originally International Rectifier's) proprietary vertical DMOS cell architecture using a hexagonal cell geometry that maximises channel density per die.
Key electrical specifications include a drain-source breakdown voltage (V(BR)DSS) of 150V, continuous drain current of 51A at 25°C case temperature, pulsed current capability up to roughly 200A, gate threshold voltage of 2V to 4V, and a maximum power dissipation of 230W at Tc. The 32mΩ RDS(on) at VGS=10V minimises conduction losses in high-current switching paths, while the 60nC typical gate charge enables fast switching transitions at frequencies above 100 kHz.
This device targets high-frequency DC-DC converters, plasma display panels, uninterruptible power supplies, motor drive H-bridges, and solar inverters. The industrial-grade qualification standard (per IR/Infineon) supports harsh-environment deployment. Designers benefit from the device's avalanche-rated single-pulse capability and dv/dt ruggedness for snubber-less operation in half-bridge topologies.
When designing with this MOSFET, careful attention to gate-drive voltage (10V recommended for full RDS(on) enhancement) and thermal management is essential - the TO-220AB can dissipate approximately 230W with adequate heatsinking. The body diode is suitable for freewheeling in bridge configurations but exhibits moderate reverse recovery, so for hard-switched bridges above 50 kHz consider an external SiC Schottky in parallel.
Alternativas directas para IRFB52N15DPBF — mismo encapsulado, compatible pin a pin. Se excluyen las piezas de otro encapsulado que requieren retrabajo de la PCB.
Variantes de esta serie
Modelos de la misma serie compatibles directamente con IRFB52N15DPBF (mismo factor de forma y huella) — difiere en Technology, MSL Level, Mounting Type, RoHS Status, Package.
Herramienta de comparación rápida — seleccione piezas alternativas para compararlas lado a lado:
IRFB52N15DPBF
✅ Sustitución directa✓ En stock
$1.65 / unidad
Ver hoja de datos →IRFB61N15D
✅ Sustitución directa📋 Alternativa de referencia (no en el catálogo)
IRFB4321G
✅ Sustitución directa📋 Alternativa de referencia (no en el catálogo)
IRFB4321
✅ Sustitución directa📋 Alternativa de referencia (no en el catálogo)
VBM1154N
✅ Sustitución directa📋 Alternativa de referencia (no en el catálogo)
IRFB52N15DPBF Valores máximos y características eléctricas
| Drain-Source Voltage (V(BR)DSS) | 150 V |
| Continuous Drain Current (ID) at TC=25C | 51 A |
| Pulsed Drain Current (IDM) | 204 A |
| Gate Threshold Voltage (VGS(th)) | 2.0 V to 4.0 V |
| Static Drain-Source On-Resistance (RDS(on)) | 32 mOhm at VGS=10V |
| Total Gate Charge (Qg) | 60 nC (typical) |
| Power Dissipation (PD) at TC=25C | 230 W |
| Power Dissipation (PD) at TA=25C | 3.8 W |
| Temperatura de unión de funcionamiento | -55 C to +175 C |
| Package Type | TO-220AB (through-hole) |
| Polarity / Channel Type | N-Channel Enhancement Mode |
| Technology | HEXFET (vertical DMOS, hexagonal cell) |
| Tipo de montaje | Through Hole |
| Estado RoHS | Compliant |
| Lead-Free Finish | Yes (Pb-free PBF suffix) |
| Qualification Standard | Industrial market (per IR/Infineon) |
Configuración de pines de IRFB52N15DPBF
| Pin 1 | Gate — Gate drive input (VGS threshold 2-4V) |
| Pin 2 | Drain — Drain connection (electrically tied to metal tab) |
| Pin 3 | Source — Source return path |
Área de funcionamiento seguro (DC)
Aplicaciones típicas
IRFB52N15DPBF es adecuado para 7 aplicacións: High-Frequency DC-DC Converters, Solar Inverter Boost and Full-Bridge Stages, Uninterruptible Power Supplies (UPS), Motor Drive H-Bridges, Plasma Display Panel Power, Switched-Mode Power Supply (SMPS) Primary Switch, Industrial Welding and Induction Heaters.
High-Frequency DC-DC Converters
The IRFB52N15DPBF is well matched to high-frequency DC-DC converter designs operating at 100-200 kHz switching frequencies. Its 60nC total gate charge enables fast switching transitions that minimise crossover losses, while the 32 mOhm RDS(on) at VGS=10V keeps conduction losses low in 48V to 12V buck or 96V to 48V intermediate bus converters. The 150V breakdown rating provides safe headroom above 96V telecom rectifier rails. Designers typically pair this MOSFET with gate drivers such as the IR2114S for half-bridge synchronous rectification topologies.
Recomendado
Solar Inverter Boost and Full-Bridge Stages
In solar inverter applications, the IRFB52N15DPBF operates reliably in boost PFC front ends and phase-shifted full-bridge DC-AC stages handling 48V to 96V string open-circuit voltages. The 150V V(BR)DSS gives a 50% safety margin above the maximum MPPT string voltage, accommodating voltage transients during grid fault events. With 51A continuous drain current, a single device supports inverter power levels up to approximately 4-5 kW. The HEXFET process is avalanche-energy rated, so the MOSFET survives typical LLC and hard-switched bridge transient events without external snubber networks in most topologies.
Recomendado
Uninterruptible Power Supplies (UPS)
Online UPS systems use the IRFB52N15DPBF in the battery-to-AC inverter stage and DC bus regulators. The 150V rating suits 96V battery stacks common in mid-power UPS, while 51A continuous current supports 4-5 kVA output power per phase. Low RDS(on) of 32 mOhm at full VGS=10V drive keeps conduction losses below 1.5% at full load, important for battery runtime. The -55C to +175C junction temperature range permits operation in unconditioned battery cabinets. Pair the MOSFET with an IRF5210PBF for synchronous rectification to reach peak efficiencies above 96%.
Recomendado
Motor Drive H-Bridges
Brushless DC and induction motor drives benefit from the IRFB52N15DPBF in H-bridge power stages driving 48V to 96V motors up to 4 kW. The 32 mOhm RDS(on) reduces I²R losses in the PWM switching path, improving drive efficiency and reducing heatsink size. The 60nC gate charge supports PWM frequencies up to 50 kHz for low-torque-ripple sinusoidal commutation. The body diode handles dead-time freewheeling current, though for hard-switched bridges above 20 kHz the designer may parallel a Schottky diode for reduced reverse-recovery losses.
Recomendado
Plasma Display Panel Power
The original target application per the IRFB52N15DPBF datasheet, plasma display panels use this MOSFET in the sustain and address driver power stages. The 150V breakdown rating suits PDP scan-voltage rails of approximately 100-120V, while the 51A peak current supports the high di/dt requirements of capacitive panel loads. Fast switching transitions driven by the 60nC gate charge keep switching losses manageable at the high frequencies required for grayscale modulation. Multiple IRFB52N15DPBF devices typically populate the energy-recovery circuit in the PDP sustain driver.
Recomendado
Switched-Mode Power Supply (SMPS) Primary Switch
As the primary-side switch in 1-3 kW SMPS designs, the IRFB52N15DPBF handles rectified 110V/220V AC mains at up to 380V DC with comfortable margin from the 150V rating when used on 110V-only inputs or with active PFC front ends. Continuous 51A current supports full-bridge and two-switch-forward topologies at power levels above 2 kW. The HEXFET process is avalanche-rated and the device tolerates typical transformer leakage-induced voltage spikes without external transient-voltage suppressors in most well-designed magnetics.
Recomendado
Industrial Welding and Induction Heaters
The IRFB52N15DPBF serves in lower-power industrial welding inverters and induction-heating resonant tanks operating from rectified 110V mains. The 150V breakdown voltage suits 110V AC rectified to roughly 150V DC bus, and the 51A continuous drain current delivers up to 7.5 kW peak power in zero-voltage-switching (ZVS) topologies. Low 32 mOhm on-resistance minimises I²R losses in the resonant LC tank, improving overall system efficiency. The industrial-grade qualification per Infineon supports the harsh thermal and EMI environment typical of welding equipment.
Recomendado
Resumen de productos recomendados
Datos de referencia de ingeniería para IRFB52N15DPBF — comparación, orientación de diseño e información de cumplimiento.
Guía de selección
Comparación con alternativas
| Parámetro | Este producto | IRFB61N15D | IRFB4321G | IRFB4321 | VBM1154N |
|---|---|---|---|---|---|
| Brand | Infineon | Infineon | Infineon | Infineon | Infineon |
| Package | TO-220AB | TO-220AB (same) | TO-220AB (same) | TO-220AB (same) | TO-220AB (same) |
| Drain-Source Voltage (V(BR)DSS) | 150 V | 150 V | 150 V | 150 V | 150 V |
| Continuous Drain Current (ID at TC=25C) | 51 A | 51 A | 51 A | 51 A | 50 A |
| Static Drain-Source On-Resistance (RDS(on)) | 32 mOhm | 30 mOhm | 32 mOhm | 32 mOhm | 30 mOhm |
| Lead-Free Finish (RoHS) | Yes (Pb-free PBF) | Yes | Yes | No (SnPb) | Yes |
Diferenciadores clave
- Slightly lower on-resistance for reduced conduction loss (frente a IRFB61N15D)
- Original IR/Infineon-branded part with full traceability (frente a VBM1154N)
- Explicit Pb-free RoHS suffix in the part number (frente a IRFB4321)
Notas de diseño
The IRFB52N15DPBF TO-220AB package has a junction-to-case thermal resistance of approximately 0.65 C/W, allowing up to 230W dissipation at TC=25C. In practice with a TO-220 mounted on a 5 C/W heatsink, total junction-to-ambient thermal resistance reaches approximately 6 C/W, allowing about 25W continuous dissipation at TA=25C. Estimated: at TA=70C with the same 5 C/W heatsink, maximum safe dissipation drops to roughly 17W before requiring further heatsinking or airflow. Always mount the tab with thermal compound and consider a thermal pad plus insulator if the tab is at drain potential.
Minimize parasitic inductance in the high-di/dt power loop by keeping the DC bus capacitors physically close to the MOSFET drain and source pins. Use a star-ground layout for the gate-driver return so that source-current transients do not couple into the gate-drive signal. The TO-220AB tab is at drain potential, so a mica or silicone-rubber insulator is required if the heatsink must be grounded or shared with other components at different potentials. Keep gate-trace impedance below 10 ohm by using a 20-50 ohm gate resistor and a gate-source pull-down of 10 kohm to prevent false turn-on from dv/dt-induced Miller current.
Do not operate the IRFB52N15DPBF with VGS below 10V at high currents, because partial enhancement dramatically increases RDS(on) and pushes the part outside its safe operating area. The absolute maximum VGS rating is +/- 20V - exceeding this destroys the gate oxide. In half-bridge or full-bridge topologies, always insert sufficient dead time (typically 200-500 ns) to prevent shoot-through, and add a gate-source resistor of 10 kohm to ensure the MOSFET stays off during controller startup. The body diode has moderate reverse recovery, so for hard-switched bridges above 50 kHz consider adding an external SiC Schottky anti-parallel diode.
For through-hole TO-220AB mounting on a single-sided PCB, use a 1.5 mm hole diameter for the drain pin to provide adequate mechanical clearance, and 1.0 mm for gate and source. Provide copper pours of at least 50 sq mm on drain and source pads to conduct heat into the PCB. For double-sided designs, stitch vias around the drain pad to inner copper planes that act as additional heatsinking. Apply 60/40 or lead-free SAC305 solder with a 350-370C iron tip, and limit contact time to 3-4 seconds per pin to avoid damaging the die-to-header bond.
Información de cumplimiento
PBF suffix indicates matte-tin Pb-free lead finish and RoHS compliance. AEC-Q100 not applicable - this is an industrial-grade through-hole MOSFET, not an automotive-qualified part. Conflict-minerals compliance per Infineon's standard supplier-declaration policy. Halogen-free status not explicitly stated in the verified data; consult the manufacturer declaration for confirmation.
