IRFB52N15DPBF - 150V 51A N-Channel HEXFET MOSFET | Infineon
MPN: IRFB52N15DPBF β Active| Qty | Unit Price | Extended |
|---|---|---|
| 1 | $2.85 | $2.85 |
| 10 | $2.52 | $25.20 |
| 100 | $2.18 | $218.00 |
| 500 | $1.89 | $945.00 |
| 1,000 | $1.65 | $1,650.00 |
Drop-in alternatives for IRFB52N15DPBF β same package, pin-to-pin compatible. Different-package parts requiring PCB rework are excluded.
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IRFB52N15DPBF
β Drop-Inβ In Stock
$1.65 / Unit
View Datasheet βIRFB61N15D
β Drop-Inπ Reference alternative (not in catalog)
IRFB4321G
β Drop-Inπ Reference alternative (not in catalog)
IRFB4321
β Drop-Inπ Reference alternative (not in catalog)
VBM1154N
β Drop-Inπ Reference alternative (not in catalog)
IRFB52N15DPBF Maximum Ratings & Electrical Characteristics
| Drain-Source Voltage (V(BR)DSS) | 150 V |
| Continuous Drain Current (ID) at TC=25C | 51 A |
| Pulsed Drain Current (IDM) | 204 A |
| Gate Threshold Voltage (VGS(th)) | 2.0 V to 4.0 V |
| Static Drain-Source On-Resistance (RDS(on)) | 32 mOhm at VGS=10V |
| Total Gate Charge (Qg) | 60 nC (typical) |
| Power Dissipation (PD) at TC=25C | 230 W |
| Power Dissipation (PD) at TA=25C | 3.8 W |
| Operating Junction Temperature | -55 C to +175 C |
| Package Type | TO-220AB (through-hole) |
| Polarity / Channel Type | N-Channel Enhancement Mode |
| Technology | HEXFET (vertical DMOS, hexagonal cell) |
| Mounting Type | Through Hole |
| RoHS Status | Compliant |
| Lead-Free Finish | Yes (Pb-free PBF suffix) |
| Qualification Standard | Industrial market (per IR/Infineon) |
IRFB52N15DPBF Pin Configuration
| Pin 1 | Gate β Gate drive input (VGS threshold 2-4V) |
| Pin 2 | Drain β Drain connection (electrically tied to metal tab) |
| Pin 3 | Source β Source return path |
Safe Operating Area (DC)
Typical Applications
IRFB52N15DPBF is suitable for 7 applications: High-Frequency DC-DC Converters, Solar Inverter Boost and Full-Bridge Stages, Uninterruptible Power Supplies (UPS), Motor Drive H-Bridges, Plasma Display Panel Power, Switched-Mode Power Supply (SMPS) Primary Switch, Industrial Welding and Induction Heaters.
High-Frequency DC-DC Converters
The IRFB52N15DPBF is well matched to high-frequency DC-DC converter designs operating at 100-200 kHz switching frequencies. Its 60nC total gate charge enables fast switching transitions that minimise crossover losses, while the 32 mOhm RDS(on) at VGS=10V keeps conduction losses low in 48V to 12V buck or 96V to 48V intermediate bus converters. The 150V breakdown rating provides safe headroom above 96V telecom rectifier rails. Designers typically pair this MOSFET with gate drivers such as the IR2114S for half-bridge synchronous rectification topologies.
Recommended
Solar Inverter Boost and Full-Bridge Stages
In solar inverter applications, the IRFB52N15DPBF operates reliably in boost PFC front ends and phase-shifted full-bridge DC-AC stages handling 48V to 96V string open-circuit voltages. The 150V V(BR)DSS gives a 50% safety margin above the maximum MPPT string voltage, accommodating voltage transients during grid fault events. With 51A continuous drain current, a single device supports inverter power levels up to approximately 4-5 kW. The HEXFET process is avalanche-energy rated, so the MOSFET survives typical LLC and hard-switched bridge transient events without external snubber networks in most topologies.
Recommended
Uninterruptible Power Supplies (UPS)
Online UPS systems use the IRFB52N15DPBF in the battery-to-AC inverter stage and DC bus regulators. The 150V rating suits 96V battery stacks common in mid-power UPS, while 51A continuous current supports 4-5 kVA output power per phase. Low RDS(on) of 32 mOhm at full VGS=10V drive keeps conduction losses below 1.5% at full load, important for battery runtime. The -55C to +175C junction temperature range permits operation in unconditioned battery cabinets. Pair the MOSFET with an IRF5210PBF for synchronous rectification to reach peak efficiencies above 96%.
Recommended
Motor Drive H-Bridges
Brushless DC and induction motor drives benefit from the IRFB52N15DPBF in H-bridge power stages driving 48V to 96V motors up to 4 kW. The 32 mOhm RDS(on) reduces IΒ²R losses in the PWM switching path, improving drive efficiency and reducing heatsink size. The 60nC gate charge supports PWM frequencies up to 50 kHz for low-torque-ripple sinusoidal commutation. The body diode handles dead-time freewheeling current, though for hard-switched bridges above 20 kHz the designer may parallel a Schottky diode for reduced reverse-recovery losses.
Recommended
Plasma Display Panel Power
The original target application per the IRFB52N15DPBF datasheet, plasma display panels use this MOSFET in the sustain and address driver power stages. The 150V breakdown rating suits PDP scan-voltage rails of approximately 100-120V, while the 51A peak current supports the high di/dt requirements of capacitive panel loads. Fast switching transitions driven by the 60nC gate charge keep switching losses manageable at the high frequencies required for grayscale modulation. Multiple IRFB52N15DPBF devices typically populate the energy-recovery circuit in the PDP sustain driver.
Recommended
Switched-Mode Power Supply (SMPS) Primary Switch
As the primary-side switch in 1-3 kW SMPS designs, the IRFB52N15DPBF handles rectified 110V/220V AC mains at up to 380V DC with comfortable margin from the 150V rating when used on 110V-only inputs or with active PFC front ends. Continuous 51A current supports full-bridge and two-switch-forward topologies at power levels above 2 kW. The HEXFET process is avalanche-rated and the device tolerates typical transformer leakage-induced voltage spikes without external transient-voltage suppressors in most well-designed magnetics.
Recommended
Industrial Welding and Induction Heaters
The IRFB52N15DPBF serves in lower-power industrial welding inverters and induction-heating resonant tanks operating from rectified 110V mains. The 150V breakdown voltage suits 110V AC rectified to roughly 150V DC bus, and the 51A continuous drain current delivers up to 7.5 kW peak power in zero-voltage-switching (ZVS) topologies. Low 32 mOhm on-resistance minimises IΒ²R losses in the resonant LC tank, improving overall system efficiency. The industrial-grade qualification per Infineon supports the harsh thermal and EMI environment typical of welding equipment.
Recommended
Recommended Products Summary
Engineering reference data for IRFB52N15DPBF β comparison, design guidance, and compliance information.
Selection Guide
Comparison with Alternatives
| Parameter | This Product | IRFB61N15D | IRFB4321G | IRFB4321 | VBM1154N |
|---|---|---|---|---|---|
| Brand | Infineon | Infineon | Infineon | Infineon | Infineon |
| Package | TO-220AB | TO-220AB (same) | TO-220AB (same) | TO-220AB (same) | TO-220AB (same) |
| Drain-Source Voltage (V(BR)DSS) | 150 V | 150 V | 150 V | 150 V | 150 V |
| Continuous Drain Current (ID at TC=25C) | 51 A | 51 A | 51 A | 51 A | 50 A |
| Static Drain-Source On-Resistance (RDS(on)) | 32 mOhm | 30 mOhm | 32 mOhm | 32 mOhm | 30 mOhm |
| Total Gate Charge (Qg) | 60 nC (typical) | [DATA_NEEDED] | [DATA_NEEDED] | [DATA_NEEDED] | [DATA_NEEDED] |
| Power Dissipation (PD at TC=25C) | 230 W | [DATA_NEEDED] | [DATA_NEEDED] | [DATA_NEEDED] | [DATA_NEEDED] |
| Lead-Free Finish (RoHS) | Yes (Pb-free PBF) | Yes | Yes | No (SnPb) | Yes |
| Approx. Unit Price at Qty 100 (USD) | 2.18 | [DATA_NEEDED] | [DATA_NEEDED] | [DATA_NEEDED] | [DATA_NEEDED] |
Key Differentiators
- Slightly lower on-resistance for reduced conduction loss (vs IRFB61N15D)
- Original IR/Infineon-branded part with full traceability (vs VBM1154N)
- Explicit Pb-free RoHS suffix in the part number (vs IRFB4321)
Design Notes
The IRFB52N15DPBF TO-220AB package has a junction-to-case thermal resistance of approximately 0.65 C/W, allowing up to 230W dissipation at TC=25C. In practice with a TO-220 mounted on a 5 C/W heatsink, total junction-to-ambient thermal resistance reaches approximately 6 C/W, allowing about 25W continuous dissipation at TA=25C. Estimated: at TA=70C with the same 5 C/W heatsink, maximum safe dissipation drops to roughly 17W before requiring further heatsinking or airflow. Always mount the tab with thermal compound and consider a thermal pad plus insulator if the tab is at drain potential.
Minimize parasitic inductance in the high-di/dt power loop by keeping the DC bus capacitors physically close to the MOSFET drain and source pins. Use a star-ground layout for the gate-driver return so that source-current transients do not couple into the gate-drive signal. The TO-220AB tab is at drain potential, so a mica or silicone-rubber insulator is required if the heatsink must be grounded or shared with other components at different potentials. Keep gate-trace impedance below 10 ohm by using a 20-50 ohm gate resistor and a gate-source pull-down of 10 kohm to prevent false turn-on from dv/dt-induced Miller current.
Do not operate the IRFB52N15DPBF with VGS below 10V at high currents, because partial enhancement dramatically increases RDS(on) and pushes the part outside its safe operating area. The absolute maximum VGS rating is +/- 20V - exceeding this destroys the gate oxide. In half-bridge or full-bridge topologies, always insert sufficient dead time (typically 200-500 ns) to prevent shoot-through, and add a gate-source resistor of 10 kohm to ensure the MOSFET stays off during controller startup. The body diode has moderate reverse recovery, so for hard-switched bridges above 50 kHz consider adding an external SiC Schottky anti-parallel diode.
For through-hole TO-220AB mounting on a single-sided PCB, use a 1.5 mm hole diameter for the drain pin to provide adequate mechanical clearance, and 1.0 mm for gate and source. Provide copper pours of at least 50 sq mm on drain and source pads to conduct heat into the PCB. For double-sided designs, stitch vias around the drain pad to inner copper planes that act as additional heatsinking. Apply 60/40 or lead-free SAC305 solder with a 350-370C iron tip, and limit contact time to 3-4 seconds per pin to avoid damaging the die-to-header bond.
Compliance Information
PBF suffix indicates matte-tin Pb-free lead finish and RoHS compliance. AEC-Q100 not applicable - this is an industrial-grade through-hole MOSFET, not an automotive-qualified part. Conflict-minerals compliance per Infineon's standard supplier-declaration policy. Halogen-free status not explicitly stated in the verified data; consult the manufacturer declaration for confirmation.
