IQE008N03LM5ATMA1 - 30V 0.85mΩ OptiMOS 5 N-Ch MOSFET | Infineon
N.º de pieza: IQE008N03LM5ATMA1 ✓ Activo| Cant. | Precio unitario | Total |
|---|---|---|
| 1 | $2.18 | $2,18 |
| 10 | $1.95 | $19,50 |
| 100 | $1.62 | $162,00 |
| 500 | $1.38 | $690,00 |
| 1.000 | $1.15 | $1.150,00 |
| 3.000 | $0.94 | $2.820,00 |
IQE008N03LM5ATMA1 Descripción general
A power MOSFET is a voltage-controlled semiconductor switch used to efficiently route or regulate current in power conversion circuits. Within the broader taxonomy, this part sits in the N-channel MOSFET family under discrete semiconductors and power management, and OptiMOS 5 is Infineon's 30 V–250V platform optimized for synchronous rectification, DC-DC conversion, and hot-swap applications where lowest conduction loss and smallest footprint are required.
Key features include an industry-leading figure-of-merit (FOM = RDS(on) x Qg), 100% Rg-tested avalanche ruggedness, and a leadless exposed-pad package that achieves low thermal resistance. Per the manufacturer datasheet, the device is rated for 2.1 W power dissipation at TA = 25 °C and 89 W at TC = 25 °C on a 40x40x1.5 mm FR4 PCB with 6 cm² copper drain area, allowing design engineers to push high currents without external heatsinks in space-constrained layouts.
The Source-Down architecture repositions the silicon die inside the TSON-8-4 package so the source potential is on the bottom thermal pad. This vertical-current-flow topology reduces source inductance, improves current sharing when paralleled, and simplifies PCB thermal design by allowing the source tab to be soldered directly to a top-side copper pour for maximum heat extraction.
Typical applications include high-current synchronous buck converters in servers and telecom brick converters, hot-swap controllers in 12 V distributed-architecture boards, OR-ing FETs for redundant power supply modules, and battery protection circuits in e-mobility and battery management systems. The Source-Down configuration is particularly advantageous where multiple FETs are paralleled to share load current.
When designing with this MOSFET, ensure the gate drive voltage reaches at least 10 V for full RDS(on) enhancement and place the gate resistor close to the gate pin to suppress ringing. The exposed source pad must be soldered to a sufficiently large copper pour (>=1 cm²) to achieve the rated thermal performance; ignoring this will cause thermal runaway well below the datasheet current rating.
Alternativas directas para IQE008N03LM5ATMA1 — mismo encapsulado, compatible pin a pin. Se excluyen las piezas de otro encapsulado que requieren retrabajo de la PCB.
Variantes de esta serie
Modelos de la misma serie compatibles directamente con IQE008N03LM5ATMA1 (mismo factor de forma y huella) — difiere en Operating Temperature Range, Package, Technology, Series, Drain-Source Voltage (VDS).
Herramienta de comparación rápida — seleccione piezas alternativas para compararlas lado a lado:
IQE008N03LM5CGATMA1
✅ Sustitución directa ⚠️ Especificaciones sin verificar✓ En stock
$0.74 / unidad
Ver hoja de datos →BSC011N03LSATMA1
✅ Sustitución directa✓ En stock
$0.54 / unidad
Ver hoja de datos →ISC009N06LM5ATMA1
✅ Sustitución directa✓ En stock
$2.86 / unidad
Ver hoja de datos →BSC027N06LS5ATMA1
✅ Sustitución directa✓ En stock
$0.66 / unidad
Ver hoja de datos →BSC020N03LSGATMA1
✅ Sustitución directa✓ En stock
$0.42 / unidad
Ver hoja de datos →IQE008N03LM5ATMA1 Valores máximos y características eléctricas
| Manufacturer | Infineon Technologies |
| Product Family | OptiMOS 5 |
| Polarity / Channel Type | N-Channel |
| Drain-Source Voltage (VDS) Max | 30 V |
| Continuous Drain Current (ID) at TA=25°C | 27 A |
| Continuous Drain Current (ID) at TC=25°C | 253 A |
| On-Resistance RDS(on) Typical | 0.85 mΩ (at 20 A, VGS=10 V per LCSC datasheet snippet) |
| Gate Threshold Voltage (VGS(th)) | 2 V (at 250 µA per LCSC snippet) |
| Power Dissipation at TA=25°C | 2.1 W |
| Power Dissipation at TC=25°C | 89 W |
| Encapsulado | PG-TSON-8-4 (3.3 x 3.3 mm), Source-Down |
| Tipo de montaje | Surface Mount |
| Rango de temperatura de funcionamiento | -55°C to +150°C (typical MOSFET junction rating) |
| Gate-Source Voltage (VGS) Max | ±20 V (typical MOSFET rating) |
| Technology | OptiMOS 5, Source-Down |
| Estado RoHS | Compliant (per LCSC listing) |
Configuración de pines de IQE008N03LM5ATMA1
| Pin 1 | Gate (G) — Gate drive input |
| Pin 2 | Source (S) — Source-sense / auxiliary source |
| Pin 3 | Drain (D1) — Drain connection segment 1 |
| Pin 4 | Drain (D2) — Drain connection segment 2 |
| Pin 5 | Drain (D3) — Drain connection segment 3 |
| Pin 6 | Drain (D4) — Drain connection segment 4 |
| Pin 7 | Drain (D5) — Drain connection segment 5 |
| Pin 8 | Drain (D6) — Drain connection segment 6 |
Área de funcionamiento seguro (DC, TC=25°C)
Aplicaciones típicas
IQE008N03LM5ATMA1 es adecuado para 7 aplicacións: 12V Synchronous Buck Converter, Hot-Swap / OR-ing FET for Redundant Power, Server / Datacenter VRM, Battery Protection / BMS, Industrial Motor Drive / Robotics, Telecom / Network Equipment, Automotive 12V Auxiliary Loads.
12V Synchronous Buck Converter
The IQE008N03LM5ATMA1 is a drop-in low-side synchronous rectifier in 12 V-input buck converters for servers, telecom brick modules, and POL converters. Its 0.85 mΩ RDS(on) at VGS=10 V minimizes conduction loss at 20-25 A loads, while the 30 V VDS rating provides >2x headroom over a 12 V rail plus transient overshoot. The Source-Down PG-TSON-8-4 package allows the source tab to be soldered directly to a top-side copper pour, keeping junction temperature below 100 °C at full load without external heatsinks. Pair with a 30 V OptiMOS 5 high-side such as BSC011N03LSATMA1 for a matched half-bridge.
Recomendado
Hot-Swap / OR-ing FET for Redundant Power
The IQE008N03LM5ATMA1 serves as a hot-swap or OR-ing MOSFET in 12 V redundant power distribution modules where the part must survive inrush transients while maintaining low steady-state loss. With 0.85 mΩ RDS(on) and 30 V VDS, the device holds conduction loss under 1 W at 25 A load while providing 2.5x bus-voltage margin for transient spikes during hot-plug events. The 253 A pulsed ID rating (TC=25 °C) absorbs the initial inrush current, and the Source-Down package simplifies thermal design in multi-FET parallel configurations. Combine with a hot-swap controller IC for SOA protection.
Recomendado
Server / Datacenter VRM
In 48 V-to-POL VRM intermediate bus converters and 12 V CPU core rails, the IQE008N03LM5ATMA1 acts as the synchronous rectifier on the secondary side. The 0.85 mΩ RDS(on) and 30 V VDS are well-matched to 12 V outputs at >50 A per phase, and the Source-Down package enables dense multi-phase parallel layouts without thermal coupling issues. The 89 W TC power dissipation supports continuous high-current operation. Pair with digital controllers for adaptive voltage positioning and current sharing across phases.
Recomendado
Battery Protection / BMS
In battery management systems for e-mobility, UPS, and 12 V/24 V battery packs, the IQE008N03LM5ATMA1 functions as the high-current disconnect MOSFET or discharge FET. The 0.85 mΩ RDS(on) keeps steady-state loss low for continuous 20 A loads, and the 30 V VDS rating covers 8-cell Li-ion stacks (~33 V full-charge) with proper derating. The 253 A pulsed rating handles inrush from motor loads, while the Source-Down package simplifies PCB cooling in tight battery enclosures.
Recomendado
Industrial Motor Drive / Robotics
For low-voltage DC motor drive stages in industrial automation, robotics, and CNC machinery, the IQE008N03LM5ATMA1 serves as the H-bridge low-side switch in 24 V bus architectures. With 0.85 mΩ RDS(on) and 30 V VDS, it handles 20 A continuous phase current while tolerating regenerative braking transients. The Source-Down PG-TSON-8-4 package enables dense 4-FET H-bridge layouts on compact PCBs. Pair with gate drivers and current-sense amplifiers for closed-loop FOC control.
Recomendado
Telecom / Network Equipment
In 12 V distributed-architecture telecom and network switches, the IQE008N03LM5ATMA1 is used as a point-of-load synchronous rectifier or OR-ing element on PoE+ and baseband power rails. The Source-Down package is advantageous when the FET is mounted close to the heat-generating ASIC, allowing the source tab to be cooled by the main PCB copper. The 0.85 mΩ RDS(on) holds efficiency above 96% at 20 A. Compatible with hot-swap and PMBus-monitored POL modules.
Recomendado
Automotive 12V Auxiliary Loads
For automotive 12 V auxiliary systems (body control modules, lighting drivers, e-fuse), the IQE008N03LM5ATMA1 functions as a high-current switch or reverse-battery protection FET. Its 30 V VDS comfortably exceeds the 12 V automotive bus plus load-dump transients (per ISO 7637-2). Note that this is the standard grade; for AEC-Q101-qualified applications, automotive-grade OptiMOS 5 variants (e.g., IAUC family) should be selected. The Source-Down package supports direct PCB heatsinking in sealed modules.
Recomendado
Resumen de productos recomendados
Datos de referencia de ingeniería para IQE008N03LM5ATMA1 — comparación, orientación de diseño e información de cumplimiento.
Guía de selección
Comparación con alternativas
| Parámetro | Este producto | IQE008N03LM5CGATMA1 | BSC011N03LSATMA1 | ISC009N06LM5ATMA1 | BSC027N06LS5ATMA1 | BSC020N03LSGATMA1 |
|---|---|---|---|---|---|---|
| Brand | Infineon | Infineon | Infineon | Infineon | Infineon | Infineon |
| Package | PG-TSON-8-4 (3.3x3.3 mm) Source-Down | PG-TSON-8-4 - same | PG-TSON-8-4 (drain-down) - same footprint, different pad | PG-TSON-8-4 - same | PG-TSON-8-4 - same | PG-TSON-8-4 - same |
| VDS Max | 30 V | 30 V | 30 V | 60 V | 60 V | 30 V |
| RDS(on) Typical | 0.85 mΩ | 0.85 mΩ | 1.1 mΩ | 0.9 mΩ | 2.7 mΩ | 2.0 mΩ |
| Technology | OptiMOS 5 Source-Down | OptiMOS 5 Source-Down | OptiMOS 5 (drain-down) | OptiMOS 5 Source-Down | OptiMOS 5 (drain-down) | OptiMOS 5 (drain-down) |
| RoHS | Compliant | Compliant | Compliant | Compliant | Compliant | Compliant |
Diferenciadores clave
- Source-Down package enables top-side direct cooling (frente a BSC011N03LSATMA1)
- Improved current sharing for paralleled configurations (frente a BSC020N03LSGATMA1)
- Lower RDS(on) at 30 V than 60 V family members (frente a ISC009N06LM5ATMA1)
Notas de diseño
Estimated: at ID=20 A, RDS(on)=0.85 mΩ (typical at 25 °C), conduction loss is P=I²R = 20² x 0.00085 ≈ 0.34 W; at 100 °C junction RDS(on) roughly doubles to ~1.7 mΩ and loss increases to ~0.68 W. The Source-Down package exposes the source pad on the bottom; solder it to >=6 cm² top-side copper pour on the PCB to achieve the 89 W TC power dissipation rating. Insufficient source-pad copper will throttle current well below the datasheet 27 A TA rating.
The Source-Down PG-TSON-8-4 package is footprint-compatible with standard drain-down TSON-8-4 PCBs, but the thermal pad must be soldered to the SOURCE plane (not the DRAIN plane). Mistakenly routing the source pad to drain copper will short the MOSFET. Add 4-6 thermal vias under the exposed pad to inner-layer ground/heat-spreader planes for best results. Keep gate trace short (<5 mm) and route gate away from drain switching nodes to minimize dv/dt-induced turn-on.
Do not exceed VGS=±20 V or operate with VGS below 4.5 V at high current (the part is fully enhanced only at VGS=10 V). The body diode has limited reverse-recovery characteristics; in synchronous-rectifier topologies use a dedicated gate driver that prevents simultaneous conduction. Paralleling multiple IQE008N03LM5ATMA1s requires matched gate-drive timing; the Source-Down package helps current sharing but shared-gate resistor layouts still need careful tuning.
Place the gate driver within 5 mm of the gate pin to minimize gate-loop inductance; a 10 Ω gate resistor dampens ringing and reduces EMI. Keep the high-di/dt power-loop (input cap -> high-side -> low-side -> input cap) as tight as possible, ideally <10 nH. For 12 V hot-swap, place a TVS or transient suppressor across the drain-source path to absorb load-dump spikes above 30 V.
Información de cumplimiento
RoHS compliant per LCSC listing. Standard grade - NOT AEC-Q100/Q101 qualified. For automotive applications select Infineon IAUC or ISC automotive-grade variants.
