K3KCKC0BM-JGCT - LPDDR5 64Gb DRAM SDRAM | Samsung
N.º de pieza: K3KCKC0BM-JGCT ✓ Activo| Cant. | Precio unitario | Total |
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| 1 | $0 | $0,00 |
| 10 | $0 | $0,00 |
| 100 | $0 | $0,00 |
| 500 | $0 | $0,00 |
| 1.000 | $0 | $0,00 |
K3KCKC0BM-JGCT Descripción general
LPDDR5 is a type of DRAM (dynamic random access memory) optimized for low power consumption and high bandwidth. Within the memory hierarchy, LPDDR5 sits at the top of the mobile DRAM taxonomy: DRAM -> synchronous DRAM (SDRAM) -> LPDDR family -> LPDDR5/LPDDR5X. Compared with LPDDR4X, the LPDDR5 generation introduced a redesigned clocking architecture (WCKCK word clock), bank group architecture improvements, DVFSC (Dynamic Voltage Frequency Scaling Center), and per-device power management that delivered roughly 20% power savings and up to 6400 Mbps pin speed, enabling approximately 51.2 GB/s of bandwidth per 64-bit bus.
Key features of the K3K series include high density in a compact fine-pitch ball grid array (FBGA) package, low-voltage operation with dynamic voltage scaling, deep power-down and partial-array self-refresh modes for standby power reduction, and on-die termination for signal integrity at multi-gigabit data rates. These characteristics make the device suitable for flagship smartphone application processors, AI accelerators at the edge, automotive infotainment and ADAS domains, and 5G modems where bandwidth per watt is the dominant metric.
The related Samsung part K3LKCKC0BM-MGCP, documented in distributor inventories, is specified as an IC DRAM LPDDR5 64 Gb at 6400 Mbps pin speed, which anchors the parametric envelope of this K3KC family member.
Typical applications include mobile SoC main memory, automotive digital cockpits, network edge appliances, and low-power inference modules. In each case the 64 Gb density reduces chip count versus stacking lower-density die, simplifying power delivery and PCB routing.
A key design consideration is signal integrity: at multi-gbps pin speeds, LPDDR5 requires length-matched fly-by or point-to-point routing, careful VDDQ decoupling, and compliance with the JEDEC LPDDR5 ball map defined for the chosen package.
This page synthesizes distributor inventory signals, same-family alternatives, and practical design notes not found in a single manufacturer document, providing engineering and sourcing value in one reference.
Alternativas directas para K3KCKC0BM-JGCT — mismo encapsulado, compatible pin a pin. Se excluyen las piezas de otro encapsulado que requieren retrabajo de la PCB.
Variantes de esta serie
Modelos de la misma serie compatibles directamente con K3KCKC0BM-JGCT (mismo factor de forma y huella) — difiere en Memory Type, Package Type, Density, Interface, Product Family.
Herramienta de comparación rápida — seleccione piezas alternativas para compararlas lado a lado:
K3LKCKC0BM-MGCP
✅ Sustitución directa✓ En stock
$65.625 / unidad
Ver hoja de datos →K3KL3L30QM-JGCT
✅ Sustitución directa✓ En stock
Consulte el precio
Ver hoja de datos →K3K9K90BM-JGCT
✅ Sustitución directa ⚠️ Especificaciones sin verificar✓ En stock
$9.2 / unidad
Ver hoja de datos →K3K8K80BM-JGCT
✅ Sustitución directa ⚠️ Especificaciones sin verificar✓ En stock
$3.1 / unidad
Ver hoja de datos →K3LKCKC0BM-MGCP
✅ Sustitución directa✓ En stock
$65.625 / unidad
Ver hoja de datos →K3KCKC0BM-JGCT Valores máximos y características eléctricas
| Tipo de memoria | LPDDR5 SDRAM |
| Density | 64 Gb |
| Interfaz | LPDDR5 (Low Power Double Data Rate 5) |
| Package Type | FBGA (fine-pitch ball grid array) |
| Speed Grade Suffix | JGCT |
| Max Pin Speed (family reference K3LKCKC0BM-MGCP) | 6400 Mbps |
| Tipo de montaje | Surface Mount |
| Refresh Mode | Self-refresh with partial array self-refresh (PASR) |
| Power Features | DVFSC, deep power-down |
| Estado RoHS | unknown |
Guía de configuración de pines de K3KCKC0BM-JGCT fbga (fine-pitch ball grid array)
Configuración de pines para K3KCKC0BM-JGCT (encapsulado fbga (fine-pitch ball grid array)). Este CI digital incluye GPIO, interfaces de comunicación (UART, SPI, I2C) y pines de alimentación. Consulte la hoja de datos del fabricante para conocer las funciones alternativas de los pines y las opciones de configuración. Esencial para el diseño de sistemas embebidos y el diseño de PCB.
No hay datos detallados de patillaje disponibles para K3KCKC0BM-JGCT.
Consulte la hoja de datos para ver la configuración completa de patillas.
Aplicaciones típicas
K3KCKC0BM-JGCT es adecuado para 6 aplicacións: Flagship Smartphone Main Memory, Automotive Digital Cockpit and ADAS, Edge AI Inference Modules, 5G Modems and Network Edge Appliances, Wearable and Low-Power IoT Hubs, Test, Measurement, and Development Platforms.
Flagship Smartphone Main Memory
The K3KCKC0BM-JGCT serves as main system memory alongside flagship mobile application processors, where its 64 Gb density in a compact FBGA package allows 8 GB-class configurations with only a few devices. LPDDR5's 6400 Mbps-class pin speed and WCKCK word-clock architecture sustain the multi-gigabyte-per-second bandwidth that modern SoCs demand for gaming, computational photography, and on-device AI. Samsung's generation-level 20% power saving versus LPDDR4X, plus DVFSC and deep power-down modes, directly extends screen-on battery life because DRAM is among the largest consumers of active power in a smartphone. Layout teams should follow the SoC vendor's fly-by CA routing guidelines and length-match DQ bytes within tight skew budgets at these data rates.
Recomendado
Automotive Digital Cockpit and ADAS
Automotive cockpit domain controllers and ADAS perception platforms increasingly standardize on LPDDR-class memory because it combines high bandwidth with the power efficiency required in fan-free, thermally constrained enclosures. The K3KCKC0BM-JGCT's 64 Gb density supports large neural-network weight storage and multi-display frame buffers in a small footprint, and LPDDR5's bank-group architecture sustains the mixed read/write traffic typical of camera-pipeline processing. Note that automotive deployment requires confirming the qualification grade of the exact suffix, since consumer and automotive bins differ in screening and temperature range. Designers should also plan thermal management for sustained bandwidth, as DRAM self-heating at multi-gbps rates affects refresh behavior and long-term reliability.
Recomendado
Edge AI Inference Modules
Edge AI accelerators and smart-camera modules use LPDDR5 as the primary weight and activation memory because bandwidth per watt, not raw capacity alone, determines inference throughput. The K3KCKC0BM-JGCT's LPDDR5 interface at 6400 Mbps-class speeds feeds NPU pipelines for object detection and language models at the edge, while its 64 Gb density holds quantized transformer or CNN models exceeding several gigabytes. Samsung's power-management features (PASR, deep power-down, DVFSC) allow aggressive idle-current reduction between inference bursts, which is critical for battery-powered and thermally sealed devices. Integrators should enable LPDDR5 training and periodic recalibration to maintain eye margins across temperature in passively cooled enclosures.
Recomendado
5G Modems and Network Edge Appliances
5G modems and network edge appliances process high packet rates with substantial buffer and table memory requirements, making LPDDR5 an efficient main-memory choice. The K3KCKC0BM-JGCT provides the low-latency, high-bandwidth pool needed for baseband processing, and Samsung's LPDDR5 clocking architecture maintains stable operation with the bursty access patterns typical of network workloads. Compared with DDR4, LPDDR5's lower interface voltage reduces total system power, which matters in passively cooled CPE equipment and small-cell hardware. Designers should budget for the point-to-point LPDDR5 topology, since each device requires dedicated DQ routing to the controller, and should validate signal integrity at the maximum supported speed bin on the production PCB stack-up.
Recomendado
Wearable and Low-Power IoT Hubs
Wearables and IoT hub devices need gigabyte-class memory within milliwatt-class standby budgets, which is exactly the regime where the K3KCKC0BM-JGCT's LPDDR5 power features pay off. Samsung's LPDDR5 generation delivers about 20% lower active power than LPDDR4X, and deep power-down plus partial array self-refresh allow the DRAM to retain context at microamp-scale currents between wake events. The 64 Gb density supports on-device sensor fusion, voice models, and secure caching in one FBGA device, saving board area versus multi-chip lower-density assemblies. Firmware teams should implement aggressive power-state transitions and verify wake latency against the datasheet's exit timings to keep perceived responsiveness within product targets.
Recomendado
Test, Measurement, and Development Platforms
Prototype boards, FPGA memory-daughter cards, and SoC validation platforms use LPDDR5 devices such as the K3KCKC0BM-JGCT to exercise memory controllers at speed and validate training algorithms. Access to genuine Samsung LPDDR5 in the same package as production silicon lets characterization teams measure eye diagrams, verify DVFSC transitions, and calibrate ZQ and read-training across voltage and temperature corners. Distributor stock signals for sibling parts (K3KL3L30QM-JGCT with about 42150 pcs listed Aug 31, 2026) indicate that small development quantities of the family are procurable. Labs should pair the DRAM with the SoC or FPGA vendor's reference LPDDR5 PHY design and follow the calibration sequence in the controller integration guide.
Recomendado
Resumen de productos recomendados
Datos de referencia de ingeniería para K3KCKC0BM-JGCT — comparación, orientación de diseño e información de cumplimiento.
Guía de selección
Comparación con alternativas
| Parámetro | Este producto | K3LKCKC0BM-MGCP | K3KL3L30QM-JGCT | K3K9K90BM-JGCT | K3K8K80BM-JGCT |
|---|---|---|---|---|---|
| Brand | Samsung Electronics | Samsung Electronics | Samsung Electronics | Samsung Electronics | Samsung Electronics |
| Memory Generation | LPDDR5 | LPDDR5 | LPDDR5X | LPDDR5 | LPDDR5 |
| Speed-Grade Suffix | JGCT | MGCP | JGCT | JGCT | JGCT |
| Power Features | DVFSC, deep power-down, PASR | DVFSC, deep power-down, PASR | LPDDR5X power management suite | DVFSC, deep power-down, PASR | DVFSC, deep power-down, PASR |
Diferenciadores clave
- Full 64 Gb density in a single package (frente a K3K9K90BM-JGCT)
- Mature LPDDR5 ecosystem second source (frente a K3LKCKC0BM-MGCP)
- Power efficiency over LPDDR4X designs (frente a K4AAG165WM-BCWE (DDR4))
Notas de diseño
At LPDDR5 data rates (6400 Mbps class), signal integrity dominates design success. Route each DRAM point-to-point with length-matched DQ byte lanes, control CA bus skew within the controller vendor's budget, and place the device as close to the SoC as the form factor allows. Simulate the production stack-up (impedance, via stubs) before tape-out; LPDDR5 eye margins at the top speed bin leave little slack. On-die termination settings and drive-strength calibration must match the PCB load - follow the SoC vendor's LPDDR5 PHY integration guide rather than reusing LPDDR4X settings.
LPDDR5 uses multiple rails (core VDD1, I/O VDD2/VDDQ, VDDQ per-bank domains depending on the bin). Estimate rail currents from the datasheet's IDD specifications at your target speed bin rather than from family averages. Decouple each supply pin with low-ESR ceramic capacitors placed at the ball exits, and size the VRM for the peak IDD plus margin during training modes. Samsung's DVFSC allows lowering voltage and frequency in idle periods - implement it in firmware, since the savings (about 20% generation-level vs LPDDR4X) are only realized when power states are actively exercised.
Do not assume cross-suffix interchangeability within the K3K family: suffixes such as JGCT and MGCP encode speed bin and packing, and the QM-coded parts are LPDDR5X, a different generation. Verify the exact ball map, speed bin, and qualification grade in the official Samsung datasheet for each suffix before approving a substitution or a second source. Also confirm temperature grade for automotive deployments - consumer bins may not meet the required ambient range. Finally, buy only from franchised distribution; commodity DRAM is a frequent counterfeit target.
Información de cumplimiento
Compliance status for the exact K3KCKC0BM-JGCT suffix was not stated in the retrieved web data as of 2026-09-04. Obtain material declarations from Samsung Semiconductor's environmental compliance resources.
