Samsung Electronics

K3LKCKC0BM-MGCP - 64Gb LPDDR5 6400Mbps DRAM | Samsung

MPN: K3LKCKC0BM-MGCP ✓ Active
In Stock Ships in 1-3 business days
500 mV, 900 mV, 1.05 V, 1.8 V Vdss FBGA-315 (PBGA315) Package [DATA_NEEDED: clock frequency] Speed LPDDR5 SDRAM (DRAM) Memory
From $46.18 USD / Unit
MOQ: 1 |
Price updated: 2026-09-04
Volume Pricing
Qty Unit Price Extended
1 $57.72 $57.72
10 $54.83 $548.30
100 $51.95 $5,195.00
500 $49.06 $24,530.00
1,000 $46.18 $46,180.00
ℹ️ All prices are in USD

Drop-in alternatives for K3LKCKC0BM-MGCP — same package, pin-to-pin compatible. Different-package parts requiring PCB rework are excluded.

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K3LKCKC0BM-MGCP Maximum Ratings & Electrical Characteristics

Memory Type LPDDR5 SDRAM (DRAM)
Memory Size 64 Gbit
Memory Organization 2G x32
Data Rate 6400 Mbps
Interface Parallel
Technology CMOS
Supply Voltages 500 mV, 900 mV, 1.05 V, 1.8 V
Operating Temperature -25 C to +85 C
Package FBGA-315 (PBGA315)
Mounting Type Surface Mount
Volatile / Non-Volatile Volatile
RoHS Status Compliant

K3LKCKC0BM-MGCP fbga-315 (pbga315) Pin Configuration Guide

Complete pinout information for K3LKCKC0BM-MGCP (fbga-315 (pbga315) package). This digital IC includes GPIO, communication interfaces (UART, SPI, I2C), and power pins. Refer to the manufacturer datasheet for alternate pin functions and configuration options. Essential for embedded system design and PCB layout.

fbga-315 (pbga315) package pinout diagram for K3LKCKC0BM-MGCP

No detailed pinout data available for K3LKCKC0BM-MGCP.

Refer to the datasheet for full pin configuration.

Safe Operating Area (SOA) & Thermal Characteristics

Safe Operating Area Chart Default safe operating area chart for K3LKCKC0BM-MGCP Drain-to-Source Voltage (Vds) Drain Current (Id)

No official SOA curve available for this digital IC. Always operate within absolute maximum ratings specified in the datasheet. Ensure adequate cooling and derate as needed.

Typical Applications

K3LKCKC0BM-MGCP is suitable for 6 applications: Flagship Smartphone Main Memory, AI Edge Computing Modules, 5G Networking Equipment Buffers, Automotive Infotainment Compute, Tablets and Notebook-Class Mobile Computing, Industrial Vision and Machine Learning Gateways.

📱

Flagship Smartphone Main Memory

The K3LKCKC0BM-MGCP fits flagship smartphone main memory because its 64 Gbit density provides 8 GB per package and its LPDDR5 interface sustains 6400 Mbps per pin, delivering the aggregate bandwidth that modern application processors demand for multitasking, gaming, and computational photography. Its multi-rail power architecture (500 mV core, 900 mV/1.05 V VDDQ, 1.8 V interface) aligns with mobile PMIC designs, and deep power-down modes minimize standby drain on the battery. In a typical design, one or two FBGA-315 packages sit directly beneath or beside the SoC with length-matched LPDDR5 traces, trading slightly higher cost than LPDDR4X for roughly 50% more bandwidth per pin and lower operating voltage, which reduces total memory subsystem power during heavy use.

🧩

AI Edge Computing Modules

Edge AI accelerators and smart-camera SoCs need high-bandwidth, low-power DRAM to feed neural network inference workloads, and the K3LKCKC0BM-MGCP delivers exactly that profile: 64 Gbit of LPDDR5 running at 6400 Mbps provides the streaming bandwidth for activation and weight transfers, while the 2G x32 organization simplifies 32-bit-wide controller mapping. The -25 C to +85 C range suits enclosed edge hardware, and the FBGA-315 package fits compact SOM and module form factors. Compared with DDR4 SODIMM-class memory, LPDDR5 cuts I/O power substantially at equivalent bandwidth; the trade-off is soldered-down memory that is not field-upgradable, so density selection at design time is permanent. Pair with a PMIC providing the 500 mV and 1.05 V rails with correct sequencing.

🌐

5G Networking Equipment Buffers

5G baseband units, small-cell radios, and network processing cards require DRAM with high sustained bandwidth for packet buffering, and the K3LKCKC0BM-MGCP's 6400 Mbps LPDDR5 interface provides the per-pin throughput needed at low latency. Its 64 Gbit capacity accommodates deep buffer pools for burst traffic absorption, while the parallel x32 organization maps cleanly onto network processor memory controllers. The industrial-leaning -25 C to +85 C temperature rating supports outdoor enclosures with passive cooling. Designers should budget for strict signal integrity: 6400 Mbps signaling over backplane-adjacent traces requires solid reference planes and ODT tuning per the Samsung datasheet. Compared with GDDR alternatives, LPDDR5 offers better power efficiency for always-on network hardware, at the cost of lower peak bandwidth than GDDR6.

🚗

Automotive Infotainment Compute

Automotive IVI head units and digital cockpit SoCs run map rendering, media, and voice workloads that benefit from the K3LKCKC0BM-MGCP's 64 Gbit density and 6400 Mbps bandwidth. The -25 C to +85 C operating range covers most cabin electronics environments, though designers must confirm whether their platform requires an AEC-Q100-qualified LPDDR5 variant, since this standard-grade part is not automotive-certified per available data. The soldered FBGA-315 package withstands vibration better than socketed DIMMs, and LPDDR5's low operating voltage reduces thermal load in sealed enclosures. Power sequencing of the 500 mV, 1.05 V, and 1.8 V rails must follow the LPDDR5 specification during the vehicle's cold-crank and sleep-wake cycles to avoid controller lock-up, making the PMIC choice a critical companion decision.

🖥️

Tablets and Notebook-Class Mobile Computing

Premium tablets and thin-and-light notebook designs increasingly adopt LPDDR5 soldered memory, and the K3LKCKC0BM-MGCP's 8 GB-per-package density allows a single package to replace multiple lower-density parts, simplifying PCB layout and reducing the BOM. At 6400 Mbps, memory bandwidth supports integrated graphics and productivity workloads, while LPDDR5's per-bank refresh and fine-grained power-down states cut idle power - a direct battery-life win versus LPDDR4X designs of equivalent capacity. The 2G x32 organization supports 32-bit and 64-bit bus configurations depending on how many packages are populated. The key design trade-off is non-upgradability: capacity must be finalized at design time, so product planners should size memory against projected OS and application growth over the product's multi-year service life.

🏭

Industrial Vision and Machine Learning Gateways

Industrial machine-vision gateways and smart-factory edge servers process multiple camera streams with on-device inference, and the K3LKCKC0BM-MGCP supplies the 64 Gbit working set plus 6400 Mbps bandwidth these pipelines require. The -25 C to +85 C rating suits control cabinets near machinery, and the FBGA-315 soldered package resists shock and vibration in Factory 4.0 environments. Its multi-rail LPDDR5 power architecture pairs naturally with industrial PMICs that already generate 1.05 V and 1.8 V rails; the 500 mV core rail typically requires a dedicated high-efficiency buck converter. Compared with conventional DDR4 UDIMMs, LPDDR5 saves board space and power but requires the memory to be designed in permanently - acceptable for fixed-function industrial gateways with long, unchanged production runs.

What is the memory size and data rate of the K3LKCKC0BM-MGCP?
The Samsung K3LKCKC0BM-MGCP is a 64 Gbit LPDDR5 SDRAM organized as 2G x32 with a 6400 Mbps data rate. According to the Samsung datasheet listing on Octopart and Datasheets360, the device uses a parallel DRAM interface in a 315-ball FBGA package, giving 8 GB of main memory per package for flagship mobile and edge AI compute platforms.
What package does the K3LKCKC0BM-MGCP use?
The K3LKCKC0BM-MGCP is housed in a 315-ball Fine-Pitch Ball Grid Array (FBGA-315, also listed as PBGA315). This fine-pitch BGA package supports the high pin count and controlled-impedance signal routing required for LPDDR5 operation at 6400 Mbps, and requires an area-array PCB footprint rather than a peripheral-lead footprint.
What supply voltages does the K3LKCKC0BM-MGCP require?
The K3LKCKC0BM-MGCP requires four supply rails: 500 mV, 900 mV, 1.05 V, and 1.8 V, as listed in the JLCPCB part specification. These correspond to the LPDDR5 core, VDDQ, and interface power domains. A multi-rail PMIC with proper sequencing is required; do not apply the 1.8 V interface rail before the core rail is stable unless the LPDDR5 sequencing rules in the Samsung datasheet are followed.
What is the price of K3LKCKC0BM-MGCP?
As of 2026-09-04, the K3LKCKC0BM-MGCP is listed from approximately $57.72 per unit on LCSC. Octopart reports bulk pricing from 9 distributors, so volume discounts of roughly 10-20% are typically available at 100+ piece quantities. Use the XAIPART RFQ flow for current volume pricing, since DRAM market pricing can move week to week.
Where to buy K3LKCKC0BM-MGCP online?
The K3LKCKC0BM-MGCP is available through distributors listed on Octopart (9 distributors as of September 2026), LCSC, JLCPCB, Win Source, IC-Components, and icDirectory, with reported stock ranging from 6,280 pcs (Octopart Canada, Aug 31, 2026) to 40,700 pcs (icDirectory, Jul 13, 2026). XAIPART also accepts RFQs for this Samsung LPDDR5 part with sourcing from franchised channels.
Is K3LKCKC0BM-MGCP in stock?
Yes, multiple distributors report stock as of 2026-09-04. Octopart Canada listed 6,280 pcs updated Aug 31, 2026, and icDirectory listed 40,700 pcs updated Jul 13, 2026. Note that LCSC showed the part out of stock while JLCPCB listed it for order, so availability varies by channel - verify real-time stock with your distributor before committing to a production schedule.
What is the difference between K3LKCKC0BM-MGCP and K3LKBKB0BM-MGCP?
Both are Samsung LPDDR5 SDRAMs organized x32 in FBGA packages; the key difference is density - the K3LKCKC0BM-MGCP is 64 Gbit while the K3LKBKB0BM-MGCP is 32 Gbit, i.e., half the capacity. According to the Octopart comparison page, both are volatile parallel DRAM in the LPDDR5 technology with tray packaging and Active status, making the 32 Gb part a lower-cost option when 8 GB of memory is not required.
K3LKCKC0BM-MGCP vs K3LKBKB0BM-MGCP - which is better for a flagship smartphone?
For a flagship smartphone needing 8 GB or more of RAM, the 64 Gbit K3LKCKC0BM-MGCP is the better choice; two packages reach 16 GB. The 32 Gbit K3LKBKB0BM-MGCP suits mid-tier designs needing 4 GB per package. Both share the LPDDR5 technology, x32 organization, and similar power rails, so bandwidth and power characteristics are comparable - the decision is purely density and BOM cost versus required system memory.
What is the best drop-in replacement for K3LKCKC0BM-MGCP?
The closest alternatives are Samsung LPDDR5 family parts such as K3LKBKB0BM-MGCP (32 Gbit, same x32 organization and LPDDR5 interface) and other K3LK/K3KL series LPDDR5 components in comparable FBGA packages. However, no true pin-to-pin cross-brand replacement is published in distributor cross-reference data. Always validate the ball map and firmware memory initialization settings against the Samsung datasheet before qualifying any substitute.
What is the best Samsung equivalent for K3LKCKC0BM-MGCP from a competitor brand?
Micron, SK Hynix, and Kioxia all manufacture JEDEC-compliant LPDDR5 64 Gbit DRAM in comparable ball grid array packages that are functionally equivalent at the protocol level. However, LPDDR5 packages are not generally pin-to-pin drop-in interchangeable across vendors due to differing ball maps; a PCB respin or a dual-footprint qualification strategy is typically required. Verify JEDEC LPDDR5 compliance and ball-out drawings in each vendor's datasheet.
When should I choose the K3LKCKC0BM-MGCP over a 32 Gbit LPDDR5?
Choose the 64 Gbit K3LKCKC0BM-MGCP when your design needs 8 GB of DRAM per package, halving component count versus two 32 Gbit devices, freeing board area and simplifying trace routing. Choose 32 Gbit parts when the memory budget is 4 GB per package, when cost is the dominant constraint, or when a lower-capacity dual-die configuration suffices. Both options use the LPDDR5 6400 Mbps-class interface in this family.
Where to download the K3LKCKC0BM-MGCP datasheet PDF?
The K3LKCKC0BM-MGCP datasheet PDF is available through datasheet aggregators such as Datasheets360 and Alldatasheet, and distributor product pages on LCSC, JLCPCB, and Win Source link to the official Samsung document. For the authoritative, current revision, request the datasheet directly from Samsung Semiconductor or your franchised distributor, as Samsung typically controls LPDDR5 documentation through NDA-supported channels.
Where can I find the K3LKCKC0BM-MGCP pinout or ball map?
The FBGA-315 ball map for the K3LKCKC0BM-MGCP is defined in the Samsung LPDDR5 datasheet, which is distributed under controlled access rather than as an open public PDF. Aggregator sites such as Datasheets360 and Alldatasheet host the document for reference. Do not design a PCB footprint from third-party summaries - always trace the ball map back to the official Samsung drawing for the -MGCP package variant.
What is the operating temperature range of K3LKCKC0BM-MGCP?
The K3LKCKC0BM-MGCP is rated from -25 C to +85 C ambient per the JLCPCB part specification. This covers most consumer and industrial environments, but is not an automotive AEC-Q100 Grade 1/2 rating; for automotive designs, verify with Samsung whether an automotive-qualified LPDDR5 variant in the same family is offered and whether the temperature grade meets your platform requirements.
Hey Google, what can replace K3LKCKC0BM-MGCP in a design?
Practical replacements are Samsung's own 64 Gbit LPDDR5 family members with equivalent speed grades, or the 32 Gbit K3LKBKB0BM-MGCP if half the density suffices. Competitor LPDDR5 DRAM from Micron or SK Hynix at 64 Gbit is protocol-compatible but usually not ball-map-identical, so a footprint review is required. Confirm density, speed bin (6400 Mbps), package ball-out, and power rail sequencing against the Samsung datasheet before substitution.
What are the key specifications of K3LKCKC0BM-MGCP that engineers should know?
Key specifications: 64 Gbit LPDDR5 SDRAM, 2G x32 organization, 6400 Mbps data rate, parallel interface, CMOS technology, four supply rails (500 mV, 900 mV, 1.05 V, 1.8 V), -25 C to +85 C operating range, and FBGA-315 (PBGA315) surface-mount package with RoHS compliance. Per Octopart and distributor listings, it is an active volatile DRAM intended for mobile and high-bandwidth edge computing main memory applications.
What PCB layout considerations apply to K3LKCKC0BM-MGCP at 6400 Mbps?
At 6400 Mbps, the LPDDR5 interface demands length-matched, controlled-impedance routing between the DRAM and the SoC, solid reference planes, and careful decoupling of the 500 mV and 1.05 V rails with low-ESR ceramics placed close to the FBGA-315 balls. Follow the Samsung datasheet ball map and JEDEC LPDDR5 layout guidance, minimize stubs on address/command lines, and simulate signal and power integrity before fabrication.

Engineering reference data for K3LKCKC0BM-MGCP — comparison, design guidance, and compliance information.

Selection Guide

Choose the K3LKCKC0BM-MGCP when your platform needs 8 GB of soldered LPDDR5 per package at 6400 Mbps - flagship smartphones, AI edge modules, 5G buffers, and premium tablets. Choose the K3LKBKB0BM-MGCP (32 Gbit, same family and package class) when 4 GB per package suffices and BOM cost dominates; it shares the LPDDR5 technology and x32 organization, so firmware changes are minimal. Choose other K3LK/K3KL family variants only after verifying their speed bin and ball map, since suffixes encode temperature and speed grades. Cross-brand LPDDR5 from Micron or SK Hynix is protocol-compatible but not pin-to-pin drop-in - plan a footprint review or dual-layout if second sourcing outside Samsung is required. Finally, for automotive safety-relevant platforms, confirm AEC-Q100 qualification status with Samsung before deployment, as the standard-grade -MGCP is rated only -25 C to +85 C.

Comparison with Alternatives

Parameter This Product K3LKBKB0BM-MGCP K3KL9L90CM-MGCT K3LKJKJ0CM-MUCP
Package FBGA-315 (PBGA315) FBGA-315 - same package FBGA-315 - same family FBGA-315 - same family
Brand Samsung Electronics Samsung Electronics Samsung Electronics Samsung Electronics
Memory Size 64 Gbit 32 Gbit [DATA_NEEDED] [DATA_NEEDED]
Memory Technology LPDDR5 SDRAM LPDDR5 SDRAM LPDDR5 SDRAM LPDDR5 SDRAM
Data Rate 6400 Mbps [DATA_NEEDED] [DATA_NEEDED] [DATA_NEEDED]
Organization 2G x32 x32 [DATA_NEEDED] [DATA_NEEDED]
Operating Temperature -25 C to +85 C [DATA_NEEDED] [DATA_NEEDED] [DATA_NEEDED]
Lifecycle Status Active Active Active Active

Key Differentiators

  • Maximum density in the family comparison set (vs K3LKBKB0BM-MGCP)
  • High bandwidth LPDDR5 interface (vs K4AAG165WM-BCWE (DDR4 alternative))
  • Trade-off: no cross-brand drop-in (vs Micron / SK Hynix LPDDR5 64 Gbit)

Design Notes

At 6400 Mbps, LPDDR5 address/command and data lines must be length-matched within the tolerance stated in the Samsung datasheet, routed over continuous reference planes with controlled single-ended and differential impedance. Minimize via stubs, keep the DRAM within the SoC's specified trace-length budget, and simulate both signal integrity and power integrity (PDN impedance) before fabrication. Use on-die termination (ODT) settings recommended in the LPDDR5 specification rather than discrete termination resistors.

The K3LKCKC0BM-MGCP requires four rails: 500 mV (core), 900 mV and 1.05 V (VDDQ domains), and 1.8 V (interface). Provide dedicated low-ESR ceramic decoupling at each FBGA ball group per the Samsung reference layout, and ensure the PMIC supports the LPDDR5 power-state transitions (deep sleep, self-refresh) with correct rail sequencing. Estimated: a single package drawing several hundred milliwatts at full bandwidth warrants a dedicated buck converter for the VDDQ rails rather than sharing with other logic.

Do not assume cross-vendor LPDDR5 packages are pin-to-pin drop-in: ball maps differ between Samsung, Micron, and SK Hynix even at identical density and speed. Also, this part is rated -25 C to +85 C and is not shown as AEC-Q100 qualified in available data - do not deploy in automotive safety paths without qualification confirmation. Finally, soldered-down LPDDR5 cannot be field-upgraded, so validate memory init/training firmware against the exact -MGCP speed bin.

Compliance Information

RoHS
Compliant
REACH
Unknown
AEC-Q100
Not Qualified
Lead Free
Yes
Halogen Free
Unknown
Conflict Minerals
Unknown

RoHS compliance stated in JLCPCB part listing. No REACH, halogen-free, or conflict-minerals statements found in provided data. No AEC-Q100 qualification indicated in available data.

Data verified on: 2026-09-04 — data verified and curated by XAIPART's component engineering team

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Samsung Electronics Samsung Semiconductor K3LKCKC0BM-MGCP K3LKBKB0BM-MGCP LPDDR5 LPDDR5 SDRAM DRAM SDRAM volatile memory FBGA-315 PBGA315 ball grid array 6400 Mbps 64 Gbit JEDEC RoHS CMOS mobile main memory edge AI computing 5G networking x32 organization on-die termination
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