MRF6P9220HR3 vs MRF6P9220HR5 Comparación

Comparación detallada lado a lado de MRF6P9220HR3 por NXP Semiconductors y MRF6P9220HR5 por NXP Semiconductors. Compare las especificaciones clave, los parámetros eléctricos, el encapsulado, el estado del ciclo de vida, los precios y la disponibilidad para determinar el mejor componente para los requisitos de su diseño.

NXP Semiconductors
MRF6P9220HR3 MRF6P9220HR3 - 880MHz 47W RF Power MOSFET | NXP

MRF6P9220HR3 - 880MHz 47W RF Power MOSFET | NXP

MRF6P9220HR3 ✓ Activo
NXP Semiconductors
MRF6P9220HR5 MRF6P9220HR5 - 880MHz 47W RF Power MOSFET | NXP Semiconductors

MRF6P9220HR5 - 880MHz 47W RF Power MOSFET | NXP Semiconductors

MRF6P9220HR5 ✓ Activo

Comparación de especificaciones

Parámetro MRF6P9220HR3 MRF6P9220HR5
Marca NXP Semiconductors NXP Semiconductors
Categoría MOSFETs MOSFETs
Estado del ciclo de vida Activo Activo
Estado del stock In Stock In Stock
Precio unitario (USD) $58,40 $91,20
Manufacturer NXP Semiconductors (formerly Freescale) —
Part Number MRF6P9220HR3 —
Tipo de transistor N-Channel Lateral MOSFET (RF Power) N-Channel RF Power MOSFET
Technology LDMOS, enhancement-mode LDMOS (Laterally Diffused MOS)
Drain-Source Voltage (VDS) 28 V typical —
Test Frequency 880 MHz —
Typical Output Power (Pout) 47 W (average, N-CDMA) —
Power Gain (Gp) 20 dB typical —
Drain Current at Test (ID) [DATA_NEEDED: drain current at Pout test] —
Quiescent Bias Current (IDQ) 1.6 A typical —
Drain Efficiency [DATA_NEEDED: efficiency at test] —
Operating Frequency Range Up to 1000 MHz (broadband, up to ~1 GHz typical) —
Encapsulado NI-860C3 (ceramic, flange-mount) —
Configuration Common-source, single-ended Single, Flanged
Tipo de montaje Surface/chassis mount (flange to heatsink) Through-Hole / Bolt-Down
Application Base-station PA, N-CDMA, industrial RF —
Estado RoHS [DATA_NEEDED: RoHS status] [DATA_NEEDED: RoHS status]
Operating Mode Enhancement mode —
Drain-Source Voltage (Vdss) — 68 V
Continuous Drain Current (Id) — 1.6 A
Typical Operating Voltage — 28 V
Operating Frequency — 880 MHz
Output Power (Pout) — 47 W (CW)
Power Gain (Gps) — 20 dB
Encapsulado / Carcasa — NI-860C3 (5-pin ceramic, flange mount)
Nivel MSL — [DATA_NEEDED: MSL level]
Temperatura de funcionamiento — -40C to +150C (TJ)
Lead-Free — [DATA_NEEDED: lead-free status]
Polarization — N-Channel

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