MRFE6P9220HR3 - 47W 900MHz RF Power LDMOS MOSFET | NXP
N.º de pieza: MRFE6P9220HR3 ✓ Activo| Cant. | Precio unitario | Total |
|---|---|---|
| 1 | $354.32 | $354,32 |
| 10 | $318.89 | $3.188,90 |
| 50 | $286.5 | $14.325,00 |
| 100 | $258 | $25.800,00 |
| 250 | $232.2 | $58.050,00 |
MRFE6P9220HR3 Descripción general
An RF power LDMOS (Laterally Diffused Metal-Oxide-Semiconductor) transistor is a specialized power MOSFET optimized for high-frequency, high-power amplification in the VHF/UHF/microwave bands. LDMOS devices sit within the broader MOSFET family -> power semiconductor -> discrete semiconductor -> electronic component hierarchy, and dominate cellular base-station power amplifier (PA) designs because they combine high breakdown voltage, high gain, and good efficiency at RF frequencies where conventional silicon power MOSFETs lose performance. The 'lateral' structure keeps current flow parallel to the die surface, reducing parasitic capacitance and enabling multi-MHz to multi-GHz operation.
Key features of the MRFE6P9220HR3 include a 66 V drain-source voltage rating, 20 dB typical power gain at 880 MHz, 47 W average / 200 W peak output power capability in N-CDMA waveforms, and operation from a 28 V supply. The part is specified for frequencies up to 1000 MHz, with broadband matching capability covering both cellular uplink (824-894 MHz) and ISM-band applications. The NI-860C3 overmolded ceramic package provides a low-thermal-resistance path and is designed for direct solder attachment to a copper-flanged PCB heatsink.
The device uses NXP's proven HV6E LDMOS process generation, which yields high intrinsic ruggedness against load mismatch (VSWR), making it tolerant of antenna-detuned conditions common in field-deployed base stations. Internal gate-source ESD protection and an integrated drain-source diode simplify bias network design. According to the manufacturer datasheet MRFE6P9220H, the device is rated for infinite VSWR survivability under specified bias and drive conditions.
Typical applications include 900 MHz GSM/CDMA/UMTS base-station final-stage power amplifiers, RFID and ISM-band industrial heaters at 915 MHz, digital broadcast transmitters, radar pulse drivers, and tactical/airborne communications amplifiers. The 28 V bias matches standard cellular infrastructure rails, simplifying power-supply design.
When designing with this device, follow the manufacturer reference layout for input/output matching networks and ensure the PCB thermal pad is bonded to a sufficient copper area or external heatsink to keep junction temperature below the maximum rating. Use a gate-side RC network for bias stabilization and a drain-side harmonic filter to meet regulatory emission masks.
This page synthesizes distributor pricing, drop-in pin-compatible NXP and competitor alternatives, and practical thermal/PCB design notes not consolidated in the manufacturer datasheet.
Alternativas directas para MRFE6P9220HR3 — mismo encapsulado, compatible pin a pin. Se excluyen las piezas de otro encapsulado que requieren retrabajo de la PCB.
Variantes de esta serie
Modelos de la misma serie compatibles directamente con MRFE6P9220HR3 (mismo factor de forma y huella) — difiere en Mounting Type, Technology, Transistor Type, Package, Configuration.
Herramienta de comparación rápida — seleccione piezas alternativas para compararlas lado a lado:
MRFE6S9125NBR1
✅ Sustitución directa📋 Alternativa de referencia (no en el catálogo)
MRFE6S9125NR1
✅ Sustitución directa📋 Alternativa de referencia (no en el catálogo)
MRFE6S9200HR3
✅ Sustitución directa✓ En stock
$52.3 / unidad
Ver hoja de datos →MRFE6S9160HR3
✅ Sustitución directa✓ En stock
$25.2 / unidad
Ver hoja de datos →MRFE6P9220HR3 Valores máximos y características eléctricas
| Tipo de transistor | LDMOS, N-Channel Enhancement-Mode, Lateral |
| Technology | RF Power MOSFET |
| Frequency Range | 865 MHz to 1000 MHz |
| Test Frequency | 880 MHz |
| Drain-Source Voltage (Vdss) Max | 66 V |
| Test Supply Voltage | 28 V |
| Test Drain Current | 1.6 A |
| Output Power (Avg, N-CDMA) | 47 W |
| Peak Output Power | 200 W |
| Power Gain (Typ) | 20 dB at 880 MHz |
| Encapsulado | NI-860C3 (NI860ML), ceramic-metal sealed cofired, surface mount |
| Configuration | Common source, 2 elements |
| Tipo de montaje | Surface Mount with copper heatsink pad |
| Lead Free Status | Lead Free |
| Estado RoHS | Compliant |
Configuración de pines de MRFE6P9220HR3
| Pin 1 | Drain — RF output / drain connection |
| Pin 2 | Drain — RF output / drain connection (parallel) |
| Pin 3 | Gate — RF input / gate connection |
| Pin 4 | Gate — RF input / gate connection (parallel) |
| Pin 5 | Source — Source / flange ground |
DC Área de funcionamiento seguro (estimated envelope)
Aplicaciones típicas
MRFE6P9220HR3 es adecuado para 6 aplicacións: 900 MHz Cellular Base Station Final-Stage PA, 915 MHz Industrial RF Heating / Plasma Generator, RFID Reader and 900 MHz ISM-Band Amplifier, Radar Pulse Driver and Tactical RF Amplifier, Digital Broadcast and DVB-T Final-Stage Amplifier, Medical and Industrial Microwave Diathermy.
900 MHz Cellular Base Station Final-Stage PA
The MRFE6P9220HR3 is purpose-built for 865-900 MHz cellular base-station final-stage power amplifiers where its 47 W average N-CDMA power, 20 dB gain, and 66 V Vdss headroom translate directly into downlink coverage and link-budget margin. The 28 V bias matches the standard -48 V telecom bus after DC-DC conversion, simplifying PA power-supply design. Per the NXP datasheet MRFE6P9220H, the device delivers this power with high drain efficiency and infinite VSWR survivability, which is critical for field-deployed antennas that may detune over time. Designers place it at the final stage after a lower-power driver such as the MRF9060 or MRFE6VP61K25H, with harmonic filtering at the output to meet 3GPP emission masks and a low-loss ceramic-loaded combiner for multi-carrier operation. The NI-860C3 copper-flanged package bolts directly to a copper or aluminum heatsink for thermal dissipation under continuous-wave or high-duty-cycle operation.
Recomendado
915 MHz Industrial RF Heating / Plasma Generator
Industrial RF heating, plasma generation, and dielectric welding at 915 MHz benefit from the MRFE6P9220HR3's broadband 865-1000 MHz coverage and 47 W average CW power capability, which is sufficient for small-to-medium industrial RF heating cavities and plasma sources. The lateral N-channel LDMOS architecture provides the high breakdown voltage (66 V Vdss) and rugged VSWR tolerance required to survive partial-matching conditions seen with changing plasma impedance. The 28 V supply simplifies the high-current rail design compared with 50 V alternatives. Designers pair it with a copper-flanged heatsink sized for continuous 47 W dissipation at the desired duty cycle and add a harmonic filter at the output to comply with FCC Part 18 industrial heating emission limits. The NI-860C3 ceramic overmolded package withstands the elevated ambient temperatures typical of industrial enclosures.
Recomendado
RFID Reader and 900 MHz ISM-Band Amplifier
The 902-928 MHz ISM band is fully covered by the MRFE6P9220HR3's 865-1000 MHz operating range, making it well suited as a final PA in long-range UHF RFID readers, wireless sensor gateways, and 900 MHz unlicensed-band transmitters. Its 20 dB gain reduces the required drive level from a small-signal transceiver IC, and the 47 W average power headroom allows trade-off between range, data rate, and regulatory emission-mask compliance. The 28 V bias is compatible with battery-backed industrial power systems. Designers add a bandpass filter at the output to comply with FCC Part 15 / ETSI EN 300 220 limits and use NXP's reference PCB footprint for repeatable impedance matching across reader unit production. The NI-860C3 surface-mount package suits automated assembly lines for high-volume RFID reader manufacturing.
Recomendado
Radar Pulse Driver and Tactical RF Amplifier
Pulsed-radar transmitters and tactical airborne / ground communications amplifiers benefit from the MRFE6P9220HR3's 200 W peak power rating, 20 dB gain, and high breakdown voltage (66 V Vdss) headroom for short-duty-cycle pulse operation in the 865-1000 MHz band. The lateral LDMOS architecture maintains phase and amplitude stability across pulse widths from sub-microsecond to continuous wave, supporting both CW radar illuminators and pulsed LFM/phase-coded waveforms. The 28 V rail enables efficient pulse modulator design, while the NI-860C3 ceramic package withstands vibration and thermal cycling typical of airborne platforms. Per the NXP datasheet, infinite VSWR survivability protects the device during antenna scan blanking or fault conditions. Designers add a fast-recovery drain modulator and T/R switch for receive/transmit isolation.
Recomendado
Digital Broadcast and DVB-T Final-Stage Amplifier
The MRFE6P9220HR3 supports digital video broadcast (DVB-T / DVB-H) and OFDM-based broadband transmitters in the 865-900 MHz band, where its 20 dB gain, 47 W average power, and high linearity minimize out-of-band emissions and adjacent-channel leakage. Per the NXP datasheet, the device maintains gain and phase linearity across the OFDM signal crest factor, which is critical for digital modulation error vector magnitude (EVM). The 28 V bias is compatible with standard broadcast PA power supplies, and the ceramic NI-860C3 package provides the thermal stability required for continuous-duty broadcast transmitter operation. Designers add digital pre-distortion (DPD) feedback paths and adaptive bias networks to optimize linearity under varying modulation conditions.
Recomendado
Medical and Industrial Microwave Diathermy
Microwave diathermy and industrial microwave drying systems operating in the 900 MHz ISM band leverage the MRFE6P9220HR3's broadband 47 W CW capability, high breakdown voltage, and rugged ceramic NI-860C3 package for continuous-duty clinical and industrial use. The lateral N-channel LDMOS architecture provides stable gain and phase over extended on-times typical of therapeutic and material-drying cycles. The 28 V bias simplifies isolation and patient-safety barrier design, and the NI-860C3 package's metal flange enables direct mounting to chassis-grounded heatsinks with thermal monitoring. Designers add precise closed-loop power control and redundant overtemperature shutdowns per IEC 60601 medical equipment safety standards or equivalent industrial machinery directives.
Recomendado
Resumen de productos recomendados
Datos de referencia de ingeniería para MRFE6P9220HR3 — comparación, orientación de diseño e información de cumplimiento.
Guía de selección
Comparación con alternativas
| Parámetro | Este producto | MRFE6S9125NBR1 | MRFE6S9125NR1 | MRFE6S9200HR3 | MRFE6S9160HR3 | MRFE6VS25LR5 |
|---|---|---|---|---|---|---|
| Brand | NXP Semiconductors | NXP Semiconductors | NXP Semiconductors | NXP Semiconductors | NXP Semiconductors | NXP Semiconductors |
| Package | NI-860C3 (NI860ML) | NI-860C3 (NI860ML) - same | NI-860C3 (NI860ML) - same | NI-860C3 (NI860ML) - same | NI-860C3 (NI860ML) - same | NI-860 variant - different outline |
| Frequency Band | 865-900 MHz (typ) | 865-1000 MHz | 865-1000 MHz | 880-1000 MHz | 900-1000 MHz | 1.8-2000 MHz (different band) |
| Test Supply Voltage | 28 V | 28 V | 28 V | 28 V | 28 V | 28 V |
| Primary Waveform | N-CDMA | W-CDMA | W-CDMA | W-CDMA | Pulsed | CW |
Diferenciadores clave
- Purpose-tuned for 865-900 MHz N-CDMA base-station final stages (frente a MRFE6S9200HR3)
- Highest gain in 900 MHz N-CDMA-targeted family (frente a MRFE6S9125NR1)
- Lower output power but more efficient in linear region (frente a MRFE6S9125NBR1)
Notas de diseño
Estimated: at 47 W average RF output with 28 V supply and ~33% drain efficiency, the device dissipates approximately 95 W DC; the NI-860C3 ceramic flange must be bolted to a copper or aluminum heatsink sized for 100 W continuous dissipation to keep junction temperature below the 200 C absolute maximum. Use thermal interface material (TIM) rated for >2 W/m-K and torque the mounting screws to NXP's recommended 0.5-0.7 N-m to minimize thermal resistance. Add a thermocouple or onboard temperature sensor for closed-loop thermal protection in continuous-duty applications such as industrial RF heating or broadcast transmitters.
Follow NXP's reference PCB layout for the NI-860 footprint: 50 ohm microstrip transmission lines on the gate (input) and drain (output) sides, with the source flange providing the RF ground return. Use Rogers RO4350B or equivalent low-loss PCB laminate for the input/output matching networks at 880 MHz to minimize dielectric loss. Place bypass capacitors (100 nF + 10 uF) within 2 mm of the gate and drain bias feeds to suppress low-frequency oscillation. Ensure the gate bias feed network includes a series resistor (10-100 ohm) for bias stabilization and a low-value parallel capacitor to suppress VHF parasitic oscillation.
Do not exceed 66 V on the drain or apply negative gate voltage above the -Vgs rating without a sequenced bias supply; NXP recommends a gate-drain bias sequencer that ensures gate voltage is applied before drain voltage. Avoid operating below the recommended quiescent current - class-AB bias is required for linear amplification, while class-C operation reduces gain and may violate emission masks. The infinite-VSWR rating applies only at the recommended bias and drive level; overdriving into a shorted or open load can still cause destruction. Verify harmonic filter design meets FCC/ETSI emission masks before final qualification.
Información de cumplimiento
RoHS compliant and lead-free per NXP product page and DigChip specifications. AEC-Q100 qualification is not applicable for RF power transistors in cellular infrastructure; for automotive-grade RF power, request AEC-Q101 qualified variants from NXP. REACH compliance per NXP product declarations. Halogen-free status not explicitly stated in available data - confirm via manufacturer datasheet.
