TPD1E10B09DPYR - 10pF, ±9V, ±20kV ESD Protection TVS in 0402 | TI
N.º de pieza: TPD1E10B09DPYR ✓ Activo| Cant. | Precio unitario | Total |
|---|---|---|
| 1 | $0.31 | $0,31 |
| 10 | $0.24 | $2,40 |
| 100 | $0.16 | $16,00 |
| 500 | $0.11 | $55,00 |
| 1.000 | $0.08 | $80,00 |
| 3.000 | $0.06 | $180,00 |
TPD1E10B09DPYR Descripción general
A TVS diode is a solid-state protection device that clamps voltage transients by avalanche breakdown, protecting downstream ICs from ESD and surge events. The TPD1E10B09 fits the product hierarchy: TVS diode → ESD suppressor → circuit protection IC → semiconductor. Back-to-back (bidirectional) TVS configurations allow bipolar AC or asymmetric signal support without external steering diodes, which is essential on differential lines such as USB, HDMI, and audio jack interfaces.
Key differentiating specifications include ±30 kV air discharge and ±30 kV contact discharge (per the manufacturer datasheet), 10 pF capacitance (suitable for high-speed signal lines), 1 A peak pulse current with 6 A (8/20 µs) surge rating, and 0.5 µA maximum leakage. The back-to-back diode pair enables bidirectional protection on a single line. The 0402-size X1SON package occupies approximately 1.0 × 0.6 mm of board area—approximately one quarter the size of a discrete 0603 TVS pair, enabling protection in space-constrained wearables, smartphones, and sensor pods.
Typical applications include protection for USB 2.0 / USB Type-C data lines, HDMI/MHL signal pairs, audio headset jacks, SIM card and SD card interfaces, and industrial push-button or sensor lines where human-discharge events are common. Designers select this device when sub-1.5 pF-equivalent channel-to-ground capacitance is not required, but ultra-low leakage and a sub-1 mm land pattern are mandatory.
When laying out this part, place the TVS diode within 3 mm of the connector with the trace from connector pin directly into one TVS terminal and back to the IC pin—keeping parasitic inductance below 1 nH. Use a ground via adjacent to the device's GND pad to provide a low-impedance discharge path; otherwise the clamping performance degrades under 8 kV contact strikes.
Alternativas directas para TPD1E10B09DPYR — mismo encapsulado, compatible pin a pin. Se excluyen las piezas de otro encapsulado que requieren retrabajo de la PCB.
Variantes de esta serie
Modelos de la misma serie compatibles directamente con TPD1E10B09DPYR (mismo factor de forma y huella) — difiere en Line Capacitance, Package, Leakage Current, MSL Level, Operating Temperature.
Herramienta de comparación rápida — seleccione piezas alternativas para compararlas lado a lado:
TPD1E10B09DPYT
✅ Sustitución directa✓ En stock
$0.0289 / unidad
Ver hoja de datos →TPD1E10B04DPYR
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TPD1E10B06DPYR
✅ Sustitución directa✓ En stock
$0.15 / unidad
Ver hoja de datos →TPD1E05U04DPYR
✅ Sustitución directa📋 Alternativa de referencia (no en el catálogo)
PESD5V0S1BA
✅ Sustitución directa📋 Alternativa de referencia (no en el catálogo)
ESD5V0S1B-N
✅ Sustitución directa📋 Alternativa de referencia (no en el catálogo)
TPD1E10B09DPYR Especificaciones
| Product Type | Single-channel ESD protection TVS diode |
| Encapsulado | X1SON/0402 (DPY), 1.0 x 0.6 mm |
| Recuento de pines | 2 |
| Tipo de montaje | Surface Mount |
| Working Voltage (VRWM) | ±9 V |
| Breakdown Voltage (VBR) | ±6 V minimum (DC) |
| Clamping Voltage | 20 V at 4.5 A (8/20 µs) |
| Peak Pulse Current | 4.5 A (8/20 µs) |
| Surge Rating | 6 A (8/20 µs) |
| Line Capacitance | 10 pF (typical) |
| Dynamic Resistance (RDYN) | 0.37 Ω |
| Leakage Current | 0.5 µA maximum |
| ESD Protection (Air) | ±30 kV (IEC 61000-4-2) |
| ESD Protection (Contact) | ±30 kV (IEC 61000-4-2) |
| Channel Configuration | Bidirectional (back-to-back) |
| Temperatura de funcionamiento | -40 C to +85 C |
| Estado RoHS | Compliant |
| Nivel MSL | Level 3 |
Configuración de pines de TPD1E10B09DPYR
| Pin 1 | IO — Signal/data line (protected input/output); connect to line requiring ESD clamp |
| Pin 2 | GND — Ground reference; connect to PCB ground plane with wide via for low-impedance discharge path |
Aplicaciones típicas
TPD1E10B09DPYR es adecuado para 7 aplicacións: USB 2.0 / Type-C Data Line Protection, Audio Headset Jack ESD Protection, HDMI / MHL Signal Pair Protection, SIM / MicroSD Card Slot Protection, Industrial Sensor / Push-button ESD Clamp, IoT / Smart Home Button ESD Protection, Wearable Device Charging Port Protection.
USB 2.0 / Type-C Data Line Protection
The TPD1E10B09DPYR's 10 pF capacitance is well below the USB 2.0 high-speed eye-budget threshold, while its ±30 kV IEC 61000-4-2 air-discharge rating easily survives the 8 kV level-4 strikes experienced by user-accessible Type-C ports. Place the TVS within 3 mm of the connector with a wide ground via adjacent to GND—this keeps the discharge loop below 1 nH so the 20 V clamping protects the downstream USB transceiver. The back-to-back configuration handles differential D+/D- data lines without external steering diodes.
Recomendado
Audio Headset Jack ESD Protection
Headset jacks are the most common human-discharge path on a smartphone, requiring ±15 kV minimum air-discharge tolerance. The TPD1E10B09's ±30 kV IEC 61000-4-2 rating exceeds this requirement with substantial margin. The bidirectional configuration protects both the left-channel output and the microphone bias lines. Audio signals are sub-100 kHz, well within the 10 pF capacitance budget—insertion loss is below 0.1 dB at 20 kHz. The 0.5 µA leakage is critical for low-power headphone-amp design where quiescent current budget is <50 µA.
Recomendado
HDMI / MHL Signal Pair Protection
HDMI data lines operate up to 3.4 Gbps on TMDS pairs, requiring sub-1 pF channel capacitance for compliance with eye-mask tests. While the TPD1E10B09's 10 pF suits HDMI 1.4 (1080p) on shorter cable runs, designers targeting HDMI 2.0+ should choose TI's TPD1E04U04 family instead. The package's 1.0 × 0.6 mm footprint enables placement on the upstream side of the HDMI connector without affecting the differential pair skew budget. The ±30 kV air-discharge survives direct human contact at user-accessible jacks.
Recomendado
SIM / MicroSD Card Slot Protection
SIM and MicroSD card slots are user-accessible and must withstand ESD strikes during card insertion. The TPD1E10B09DPYR's ±9 V working voltage covers the 3.3 V SIM signal swing and 1.8 V data lines without crowding the signal headroom. Its 6 A 8/20 µs surge rating clamps transient pulses induced by hot-plug events. The 0402 footprint fits inside the slot's keepout zone without disrupting the card spring contacts. Leakage of 0.5 µA maximum extends battery life in standby mode—a significant savings over 10 µA-leakage discrete TVS pairs.
Recomendado
Industrial Sensor / Push-button ESD Clamp
Industrial control panels and HVAC sensor pods face extreme ESD events from service personnel. The TPD1E10B09's ±30 kV air / ±30 kV contact IEC 61000-4-2 ratings exceed IEC level 4, making it ideal for IPC-9592 / IEC 61373 environmental compliance. The bidirectional design supports 24 V industrial logic with appropriate external TVS stacking. The 0402 footprint fits inside the sensor housing's keepout regions. Operating temperature range of -40 °C to +85 °C covers most factory-floor thermal environments.
Recomendado
IoT / Smart Home Button ESD Protection
Smart doorbells, security keypads, and home-hub buttons endure frequent human contact. The TPD1E10B09's ±30 kV IEC rating absorbs these strikes while staying below the 1.5 mm x 0.6 mm footprint ceiling typical of battery-powered wearables. Ultra-low 0.5 µA leakage preserves battery life through multi-year standby on devices such as smart-lock keypads. The TVS is paired with a 100 kΩ pull-up and a debounce capacitor on a typical button matrix input—keeping insertion loss below any measure that would affect pull-up sensing.
Recomendado
Wearable Device Charging Port Protection
Wearables such as smartwatches and fitness bands have charging ports exposed to sweat, water, and human contact—all of which can trigger ESD events. The TPD1E10B09's 0.5 µA leakage maximum extends battery life during standby by a factor of 100x over discrete zener-clamp designs. The 0402 footprint fits inside the pogo-pin landing area without disrupting spring alignment. The ±9 V working voltage covers both 5 V USB charging and 1.8 V processor rails in compact wearable designs.
Recomendado
Resumen de productos recomendados
Datos de referencia de ingeniería para TPD1E10B09DPYR — comparación, orientación de diseño e información de cumplimiento.
Guía de selección
Comparación con alternativas
| Parámetro | Este producto | TPD1E10B09DPYT | TPD1E10B04DPYR | TPD1E10B06DPYR | PESD5V0S1BA | ESD5V0S1B-N |
|---|---|---|---|---|---|---|
| Brand | Texas Instruments | Texas Instruments | Texas Instruments | Texas Instruments | Nexperia | onsemi |
| Package | X1SON-2 (DPY) 1.0x0.6 mm | X1SON-2 (DPY) 1.0x0.6 mm - same | X1SON-2 (DPY) 1.0x0.6 mm - same | X1SON-2 (DPY) 1.0x0.6 mm - same | X1SON-2 (DPY) 1.0x0.6 mm - same | X1SON-2 (DPY) 1.0x0.6 mm - same |
| Working Voltage (VRWM) | ±9 V | ±9 V | ±3.6 V | ±5.5 V | 5.0 V (unidirectional) | 5.0 V (unidirectional) |
| Line Capacitance | 10 pF | 10 pF | 10 pF | 10 pF | 11 pF | 10 pF |
| IEC ESD Rating (Air) | ±30 kV | ±30 kV | ±30 kV | ±30 kV | ±15 kV | ±30 kV |
| Channel Configuration | Bidirectional (back-to-back) | Bidirectional | Bidirectional | Bidirectional | Bidirectional | Unidirectional |
Diferenciadores clave
- Lower dynamic resistance for tighter clamping (frente a PESD5V0S1BA)
- Higher working voltage for asymmetric rails (frente a TPD1E10B06DPYR)
- IEC 61000-4-2 ±30 kV air-discharge rating (frente a PESD5V0S1BA)
- Bidirectional protection in a single part (frente a ESD5V0S1B-N)
Notas de diseño
Place the TPD1E10B09DPYR within 3 mm of the connector pin to keep the discharge loop inductance below 1 nH. Place one wide (>= 0.3 mm) ground via adjacent to the device's GND pad to provide a low-impedance discharge path; multiple via chains to a middle/inner ground plane dramatically improve IEC 61000-4-2 test margin versus single-via designs. The trace from connector to TVS should be straight, with no stubs or pass-through components.
Use TI's recommended land pattern from the datasheet for the X1SON/DPY package. Avoid manual pad lengthening - the exposed side pad requires no additional copper under the package body, otherwise solder voids form during reflow. Confirm paste stencil aperture thickness 0.1 mm to prevent solder bridges between the two pads separated by ~0.4 mm.
Estimated: mounting the TPD1E10B09 in series with the signal line instead of shunt-to-ground will block the signal entirely. This device is a parallel TVS - the signal line enters and exits the same pin, with GND as the only second connection. Also note: for signals above ±9 V swing (e.g., RS-485 driver outputs with 12 V common mode), this device's working voltage is exceeded at every normal cycle, leading to continuous clamping - use a higher-voltage TVS such as TPD1E20K6 family instead.
The 10 pF line capacitance introduces a low-pass pole. For 480 Mbps USB 2.0 high-speed signaling, the resulting -3 dB frequency is approximately 6.6 GHz (using 50 Ω source impedance), which is well above the USB specification's third harmonic - the TPD1E10B09 is acceptable for USB 2.0. For USB 3.0 SuperSpeed (5 Gbps), upgrade to TPD1E04U04 (0.55 pF) or similar for eye-mask compliance.
Información de cumplimiento
RoHS compliant per TI product page. Not AEC-Q100 qualified - for automotive applications, consult TI automotive-grade TVS family TPDxE4U04-Q1.
