TPD1E10B06DPYR - Single-Channel ESD TVS Diode, ±30kV | TI
N.º de pieza: TPD1E10B06DPYR ✓ Activo| Cant. | Precio unitario | Total |
|---|---|---|
| 1 | $0.36 | $0,36 |
| 10 | $0.32 | $3,20 |
| 100 | $0.27 | $27,00 |
| 500 | $0.22 | $110,00 |
| 1.000 | $0.18 | $180,00 |
| 3.000 | $0.15 | $450,00 |
TPD1E10B06DPYR Descripción general
What is a TVS diode? A TVS (transient voltage suppressor) diode is a clamping semiconductor that diverts ESD and surge energy away from sensitive downstream ICs. Within the protection hierarchy (TVS -> protection diode -> discrete semiconductor -> electronic component), TVS arrays sit closest to external connectors, where they shunt fast transients (ns-scale ESD, µs-scale surge) before they reach ASICs, MCUs, or analog front-ends. The TPD1E10B06 family uses a back-to-back configuration to handle bipolar signals.
Key specifications include 12pF (typical, per DigiKey listing; datasheet lists 10pF IO capacitance typical and 12pF line capacitance) line capacitance, 0.37 Ω dynamic resistance (R_DYNAMIC), and ±6V minimum DC breakdown voltage. The 0402-class footprint frees PCB real estate for high-density mobile and wearable designs where every square millimeter matters. The device is rated for ultra-low leakage current, minimizing quiescent loss on protected lines.
Architecturally, the TPD1E10B06 uses a silicon TVS structure with back-to-back Zener diodes, achieving system-level IEC 61000-4-2 ESD immunity. Its low capacitance suits data lines like USB VBUS/ID, audio (microphone, headphone, speakerphone), SD card interfaces, keypads, and GPIO. The bidirectional capability removes the need for two unidirectional TVS in many use cases, halving the BOM on differential or AC-coupled lines.
Typical applications include protection for audio lines (microphone, earphone, speakerphone), SD card interfaces, keypad buttons, USB port VBUS/ID pins, and general-purpose GPIO. End-equipment targets are portable devices, wearables, set-top boxes, electronic point-of-sale terminals, and appliances. The low 12pF capacitance preserves signal integrity on high-speed interfaces.
Design tip: place the TPD1E10B06DPYR as close as possible to the external connector with a short, low-inductance ground return. Use a dedicated TVS ground via directly to the chassis/ground plane to maximize the IEC 61000-4-2 discharge current path and avoid coupling noise into adjacent signal traces. This component is also available in a larger SOD-523 (DPYT) variant on the same datasheet for layouts needing a different footprint.
Alternativas directas para TPD1E10B06DPYR — mismo encapsulado, compatible pin a pin. Se excluyen las piezas de otro encapsulado que requieren retrabajo de la PCB.
Variantes de esta serie
Modelos de la misma serie compatibles directamente con TPD1E10B06DPYR (mismo factor de forma y huella) — difiere en Package, Product Type, Clamping Voltage, Line Capacitance, Peak Pulse Current.
Herramienta de comparación rápida — seleccione piezas alternativas para compararlas lado a lado:
No hay alternativas directas disponibles para este producto.
Solicitar alternativasTPD1E10B06DPYR Valores máximos y características eléctricas
| Device Type | Single-channel ESD protection TVS diode |
| Polarity | Bidirectional (back-to-back TVS) |
| Working Voltage (Vrwm) | 5 V (typical); 14 V clamp at 5 A Ipp |
| DC Breakdown Voltage | ±6 V (minimum) |
| Peak Pulse Current (Ipp) | 5 A (8/20 µs) |
| ESD Contact Discharge | ±30 kV (IEC 61000-4-2) |
| ESD Air-Gap Discharge | ±30 kV (IEC 61000-4-2) |
| Line Capacitance | 12 pF (typical) |
| IO Capacitance | 10 pF (typical) |
| Dynamic Resistance (R_DYNAMIC) | 0.37 Ω |
| Leakage Current | Ultra-low (nA range per datasheet) |
| Encapsulado | X1SON / 2-X1SON (DPY), 1.0 x 0.6 mm |
| Tipo de montaje | Surface Mount |
| Temperatura de funcionamiento | -40 °C to +125 °C |
| ESD Standard | IEC 61000-4-2 Level 4 (Air & Contact) |
| Estado RoHS | Compliant |
| Nivel MSL | Level 3 (per PartGenie summary) |
Guía de configuración de pines de TPD1E10B06DPYR x1son / 2-x1son (dpy), 1.0 x 0.6 mm
Configuración de pines para TPD1E10B06DPYR (encapsulado x1son / 2-x1son (dpy), 1.0 x 0.6 mm). Este dispositivo de potencia presenta terminales de puerta, drenador y fuente. Para encapsulados no polarizados, consulte la hoja de datos del fabricante para conocer la orientación exacta del pin 1 y los detalles del footprint. Las aplicaciones habituales incluyen el diseño de fuentes de alimentación, el accionamiento de motores y la conmutación de cargas.
No hay datos detallados de patillaje disponibles para TPD1E10B06DPYR.
Consulte la hoja de datos para ver la configuración completa de patillas.
Aplicaciones típicas
TPD1E10B06DPYR es adecuado para 3 aplicacións: Gestión de energía, Control de motores, Iluminación LED.
Gestión de energía
Conmutación y regulación en circuitos de fuente de alimentación usando TPD1E10B06DPYR.
Control de motores
Accionamiento y control de motores DC/BLDC con TPD1E10B06DPYR.
Iluminación LED
Accionamiento de cadenas y matrices de LED con TPD1E10B06DPYR.
Datos de referencia de ingeniería para TPD1E10B06DPYR — comparación, orientación de diseño e información de cumplimiento.
Guía de selección
Comparación con alternativas
| Parámetro | Este producto | TPD1E10B06DPYT | TPD1E10B04DPYR | TPD1E10B06QDPYRQ1 |
|---|---|---|---|---|
| Package | 2-X1SON (DPY), 1.0 x 0.6 mm | SOD-523 (DPYT) - different land pattern, same die | 2-X1SON (DPY) - same footprint | 2-X1SON (DPY) Q1 - same footprint |
| Brand | Texas Instruments | Texas Instruments | Texas Instruments | Texas Instruments |
| Working Voltage (Vrwm) | 5 V | 5 V | 3.6 V | 5 V |
| ESD Rating (Contact / Air-Gap) | ±30 kV / ±30 kV | ±30 kV / ±30 kV | ±30 kV / ±30 kV | ±30 kV / ±30 kV |
| Polarity | Bidirectional | Bidirectional | Bidirectional | Bidirectional |
| Automotive Grade (AEC-Q100) | No | No | No | Yes (Q1 suffix) |
Diferenciadores clave
- Smallest bidirectional TVS footprint in TI's 5 V ESD portfolio (frente a TPD1E10B06DPYT (SOD-523))
- AEC-Q100 qualified drop-in available (frente a TPD1E10B06DPYR (industrial))
- Higher working voltage than TPD1E10B04 (frente a TPD1E10B04DPYR)
Notas de diseño
Place the TPD1E10B06DPYR within 2-3 mm of the external connector pads to minimize the inductance of the discharge path. Use a dedicated short, wide TVS-ground via directly under the device's ground terminal to the chassis/ground plane; long ground returns turn the discharge inductance into a secondary clamp-voltage overshoot that defeats the TVS.
Route the protected trace on a single layer (avoid vias on the protected path). Keep the trace impedance matched because the TPD1E10B06DPYR adds 12 pF capacitance; for USB 2.0 (480 Mbps) and similar interfaces this is on the upper edge of acceptable parasitic load, so account for it in your signal-integrity budget.
Do not stack the TPD1E10B06DPYR on the same line as a series ferrite bead without verifying that the bead's saturation current and DC resistance do not push the protected line voltage outside the ±6 V DC breakdown of the TVS. Also avoid using the TVS on lines whose nominal operating voltage exceeds 5 V for extended periods; the part's Vrwm is 5 V and prolonged exposure above that accelerates leakage degradation.
The TPD1E10B06DPYR's 12 pF capacitance is acceptable for sub-100 MHz signals (USB low/full speed, audio, GPIO, SD card) but may attenuate edges on HDMI/MIPI/USB 3.0. For these higher-speed interfaces choose a lower-capacitance TVS in TI's TPD1E04U04 or similar sub-1 pF family. Estimated: the RC rise-time constant (assuming 50 Ω source) is ~600 ps, well below USB 2.0 Hi-Speed unit interval of 2.08 ns.
Información de cumplimiento
RoHS-compliant per TI product page and PartGenie summary. The Q1 variant TPD1E10B06QDPYRQ1 is AEC-Q100 qualified for automotive use; the standard DPYR part is industrial/consumer grade. REACH, halogen-free, and conflict-mineral status not explicitly stated in the verified web data.
