UCC21530 - 4A/6A 5.7kVRMS Isolated Dual Gate Driver | TI
N.º de pieza: UCC21530 ✓ Activo| Cant. | Precio unitario | Total |
|---|---|---|
| 1 | $3.15 | $3,15 |
| 10 | $2.85 | $28,50 |
| 100 | $2.4 | $240,00 |
| 500 | $2.05 | $1.025,00 |
| 1.000 | $1.75 | $1.750,00 |
UCC21530 Descripción general
An isolated gate driver is a specialized power-management IC that provides galvanic isolation between a low-voltage controller (MCU or PWM controller) and a high-voltage power stage while supplying the peak current required to switch power transistors rapidly. It sits in the power electronics signal chain between the digital controller and the gate of an IGBT or MOSFET. The UCC21530 uses a capacitive isolation architecture, which enables high-speed signal transfer with low power consumption compared with optocoupler-based drivers.
Key features include 4A/6A peak output current, 5.7kVRMS reinforced isolation, 125V/ns minimum CMTI, 3.3mm channel-to-channel spacing, an enable pin, and programmable dead time via the DT pin. According to the TI datasheet, the device offers best-in-class propagation delay and low pulse-width distortion, which reduces dead-time losses and enables precise, efficient switching. Undervoltage lockout (UVLO) on both the input and output sides adds system-level robustness.
Architecturally, the UCC21530 comprises an input-side controller coupled through a capacitive isolation barrier to two secondary-side drivers. The reinforced barrier supports demanding safety standards, while internal functional isolation between the two outputs allows independent high-side and low-side operation in half-bridge and full-bridge configurations without external isolation components.
Typical applications include three-phase motor drives, solar string inverters, EV onboard chargers, UPS systems, and server power supplies. High peak current and low propagation delay minimize switching losses, while high CMTI prevents false gate triggering at rapidly slewing switch nodes in SiC designs.
When designing with the UCC21530, minimize gate-loop parasitic inductance, set dead time correctly via the DT pin to prevent shoot-through, and verify UVLO thresholds against your rail-sequencing plan for reliable startup. Pricing as of 2026-08-30 is available from authorized distributors listed in data sources.
Alternativas directas para UCC21530 — mismo encapsulado, compatible pin a pin. Se excluyen las piezas de otro encapsulado que requieren retrabajo de la PCB.
Variantes de esta serie
Modelos de la misma serie compatibles directamente con UCC21530 (mismo factor de forma y huella) — difiere en Package, UVLO, Channel-to-Channel Spacing, Isolation Rating, Automotive Qualification.
Herramienta de comparación rápida — seleccione piezas alternativas para compararlas lado a lado:
UCC21530BQDWKRQ1
✅ Sustitución directa📋 Alternativa de referencia (no en el catálogo)
UCC21530Q-Q1
✅ Sustitución directa ⚠️ Especificaciones sin verificar✓ En stock
$2.1 / unidad
Ver hoja de datos →UCC21540QDWKRQ1
✅ Sustitución directa ⚠️ Especificaciones sin verificar✓ En stock
$2.21 / unidad
Ver hoja de datos →1EDC75I012N
⚡ Mismo encapsulado ⚠️ Especificaciones sin verificar📋 Alternativa de referencia (no en el catálogo)
NCP51530
⚡ Mismo encapsulado ⚠️ Especificaciones sin verificar📋 Alternativa de referencia (no en el catálogo)
UCC21530 Valores máximos y características eléctricas
| Canales | 2 (isolated dual-channel) |
| Peak Output Current (Source) | 4 A |
| Peak Output Current (Sink) | 6 A |
| Isolation Type | Capacitive, reinforced |
| Isolation Rating | 5700 Vrms |
| CMTI (Common-Mode Transient Immunity) | 125 V/ns minimum |
| Max Switching Frequency | 5 MHz |
| Channel-to-Channel Spacing | 3.3 mm |
| Patilla de habilitación | Yes |
| Programmable Dead Time | Yes (DT pin) |
| UVLO | Yes, input and output sides |
| Target Power Devices | IGBT, Si MOSFET, SiC MOSFET |
| Encapsulado | SOIC-14 (DWK), surface mount |
| Estado RoHS | Compliant |
Configuración de pines de UCC21530
| Pin 1 | VCCI — Input-side supply voltage |
| Pin 2 | GND — Input-side ground |
| Pin 3 | INH — High-side PWM input |
| Pin 4 | INL — Low-side PWM input |
| Pin 5 | DT — Dead-time programming resistor |
| Pin 6 | DIS — Disable input (shuts both outputs) |
| Pin 7 | NC/EN — No connect or enable, per orderable variant |
| Pin 8 | NC — No connect |
| Pin 9 | NC — No connect |
| Pin 10 | VEAH — High-side source reference (return) |
| Pin 11 | OUTA — High-side gate drive output |
| Pin 12 | VDDA — High-side output supply |
| Pin 13 | VEBL — Low-side source reference (return) |
| Pin 14 | OUTB — Low-side gate drive output |
Aplicaciones típicas
UCC21530 es adecuado para 6 aplicacións: Three-Phase Motor Drives, Solar String Inverters, EV Onboard Chargers and Traction Systems, Server and Telecom Power Supplies, UPS and Energy Storage Systems, Industrial Welders and High-Power Converters.
Three-Phase Motor Drives
The UCC21530 fits three-phase motor drive inverters because its 4A source/6A sink peak current switches IGBTs and SiC MOSFETs rapidly while its 125V/ns minimum CMTI withstands the dv/dt generated at each switch node. TI's 10kW three-phase inverter reference design pairs the UCC21530 with AMC1301/AMC1311 isolated amplifiers and a TMS320F28027 MCU. In use, each of three half-bridges is driven by one UCC21530, with the DT pin programming dead time to prevent shoot-through; the reinforced 5.7kVRMS barrier supports motor-drive safety isolation.
Recomendado
Solar String Inverters
Photovoltaic string inverters use half-bridge and full-bridge isolated power stages where the UCC21530's reinforced 5.7kVRMS isolation and 5MHz capability support both line-frequency and resonant topologies. Its low pulse-width distortion preserves PWM symmetry across temperature, improving converter efficiency, while UVLO on both isolation sides prevents incomplete gate drive during startup. With the enable pin, system controllers can safely shut down the power stage during grid faults. The 3.3mm channel spacing aids creepage and clearance layout in high-bus-voltage designs.
Recomendado
EV Onboard Chargers and Traction Systems
EV onboard chargers (OBC) and DC-DC converters operate at high bus voltages (400-800V) with fast-switching SiC MOSFETs, a regime where the UCC21530's 125V/ns CMTI and 5.7kVRMS reinforced isolation are essential. The 4A/6A peak drive minimizes switching losses for high efficiency targets, and programmable dead time accommodates LLC or phase-shifted-full-bridge topologies. For automotive programs, the AEC-Q100 qualified UCC21530-Q1 provides the same die in the same SOIC-14 DWK footprint without redesign.
Recomendado
Server and Telecom Power Supplies
Server PSU and telecom rectifier designs use interleaved bridge or LLC stages where the UCC21530's low propagation delay and minimal pulse-width distortion improve control accuracy and transient response at switching frequencies into the hundreds of kHz. The enable pin allows hot-swap power management and sequencing with hot-plug controllers, while the compact 14-pin SOIC DWK package keeps gate-drive circuitry dense on high-power-density boards. High CMTI keeps outputs stable even in layouts with significant switch-node dv/dt coupling.
Recomendado
UPS and Energy Storage Systems
Uninterruptible power supplies and battery energy storage inverters drive high-current IGBT/SiC bridges under high common-mode stress, conditions matched by the UCC21530's 5.7kVRMS reinforced barrier and 125V/ns CMTI. The interlock and programmable dead time prevent simultaneous conduction in half-bridge legs, protecting expensive power modules during fault transients. UVLO ensures the output stage stays off until gate-drive rails are valid, avoiding partial gate drive that can destroy IGBTs during brown-out or startup sequencing events.
Recomendado
Industrial Welders and High-Power Converters
Industrial welding power supplies and high-power converters benefit from the UCC21530's 5MHz capability and fast 4A/6A gate drive, which support both hard-switched and resonant topologies requiring precise high-frequency control. Its capacitive isolation architecture consumes less quiescent power than optocoupler drivers, reducing bias-supply burden. The rugged CMTI specification tolerates the harsh dv/dt environment typical of welder outputs, and the enable pin supports quick output shutdown for safety and process-control requirements in industrial equipment.
Recomendado
Resumen de productos recomendados
Datos de referencia de ingeniería para UCC21530 — comparación, orientación de diseño e información de cumplimiento.
Guía de selección
Comparación con alternativas
| Parámetro | Este producto | UCC21530BQDWKRQ1 | UCC21530Q-Q1 | 1EDC75I012N |
|---|---|---|---|---|
| Package | SOIC-14 (DWK) | SOIC-14 (DWK) - same | SOIC-14 (DWK) - same | DSO-14 - same outline, verify pin map |
| Brand | Texas Instruments | Texas Instruments | Texas Instruments | Infineon |
| Peak Source Current | 4 A | 4 A | 4 A | 7 A |
| Peak Sink Current | 6 A | 6 A | 6 A | 7 A |
| Isolation Rating | 5700 Vrms | 5700 Vrms | 5700 Vrms | 5000 Vrms |
| Channels | 2 (isolated dual) | 2 | 2 | 1 |
| Automotive Grade (AEC-Q100) | No | Yes (Q1) | Yes (Q1) | No (standard grade) |
Diferenciadores clave
- Programmable dead time plus enable/disable control (frente a UCC21520)
- Automotive drop-in upgrade path (frente a UCC21530BQDWKRQ1)
- Dual-channel integration on one isolated barrier (frente a 1EDC75I012N (Infineon))
Notas de diseño
Minimize parasitic inductance in the gate-drive loop by placing the UCC21530 output pins as close as possible to the power MOSFET gate and source. Keep OUTA/VEAH and OUTB/VEBL loops short and wide, and route each channel's return directly adjacent to its output trace. Excess loop inductance with 4A/6A peak currents can cause gate ringing, overshoot beyond VGS limits, and EMI radiation.
Set dead time correctly via the DT resistor before first power-up. Insufficient dead time in a half-bridge causes shoot-through current that can destroy the power stage in microseconds; excessive dead time increases diode conduction losses. Verify DT resistor value against the TI datasheet table, and verify UVLO thresholds (VDD turn-on/turn-off) match your bias-rail sequencing so outputs never operate on partial gate drive.
Route the input-side signals (INH, INL, DIS, DT) away from output gate traces to avoid coupling PWM noise back into the controller. Decouple VCCI, VDDA, and VDDB with at least 100nF-1uF ceramic capacitors placed within 2mm of their pins. The 125V/ns CMTI rating assumes low-impedance common-mode paths; a good low-side ground plane under the driver reduces common-mode impedance.
Gate-drive average dissipation in the driver equals Qg x Vdrive x fsw per channel. At Qg = 100nC, VDD = 15V, and fsw = 500kHz, each channel dissipates roughly 0.75W, so two high-frequency channels may need the SOIC-14 thermal pad (DWK exposed pad) tied to a copper pour. Calculate driver losses at maximum switching frequency, not just peak current.
Información de cumplimiento
RoHS compliant and lead-free per TI product pages. AEC-Q100 qualification applies only to the UCC21530-Q1 variants. REACH and halogen-free status not found in provided data.
