UCC21530Q-Q1 - 4A/6A 5.7kVRMS Isolated Gate Driver | TI
N.º de pieza: UCC21530Q-Q1 ✓ Activo| Cant. | Precio unitario | Total |
|---|---|---|
| 1 | $3.65 | $3,65 |
| 10 | $3.28 | $32,80 |
| 100 | $2.85 | $285,00 |
| 500 | $2.45 | $1.225,00 |
| 1.000 | $2.1 | $2.100,00 |
UCC21530Q-Q1 Descripción general
An isolated gate driver is a power management IC that transfers logic-level PWM control signals across a galvanic isolation barrier to drive the gate of a high-side or low-side power switch floating at high voltage. Within the power-electronics hierarchy (gate driver -> isolated driver IC -> power management IC -> semiconductor), the UCC21530-Q1 occupies the critical interface between a microcontroller such as the TMS320F28004x C2000 family and the power stage.
Key features include best-in-class propagation delay and pulse-width distortion, programmable dead time via a single DT pin resistor, a common-mode transient immunity (CMTI) of at least 125V/ns for operation on fast-switching GaN and SiC bridges, and TTL/CMOS-compatible input thresholds independent of the VDDI supply. An enable pin allows global shutdown, and both outputs can be interlocked for half-bridge configurations.
The capacitive isolation architecture supports a maximum repetitive peak isolation voltage suitable for 800V-class automotive systems such as on-board chargers and traction inverters, though designers should verify creepage requirements against the 3mm package spacing. Wide VDDI operation on the output side accommodates 5V-to-20V gate-drive rails needed for SiC MOSFETs.
Typical applications include automotive traction inverters, 800V on-board chargers (OBC), DC-DC converters, motor drives, and solar inverters. Pairing the driver with SiC MOSFETs such as the LMG3422 GaFET ecosystem or discrete SiC switches yields low-loss, high-frequency power stages.
Design tip: size the DT-pin resistor precisely to set dead time, and place a low-ESR decoupling network (1uF plus 100nF) directly at VDDA and VDDB to sustain 4A/6A peak gate currents without droop.
Alternativas directas para UCC21530Q-Q1 — mismo encapsulado, compatible pin a pin. Se excluyen las piezas de otro encapsulado que requieren retrabajo de la PCB.
Variantes de esta serie
Modelos de la misma serie compatibles directamente con UCC21530Q-Q1 (mismo factor de forma y huella) — difiere en Package, Isolation Rating, Isolation Technology, Input Threshold, UVLO.
Herramienta de comparación rápida — seleccione piezas alternativas para compararlas lado a lado:
UCC21530
✅ Sustitución directa✓ En stock
$1.75 / unidad
Ver hoja de datos →UCC21530BQDWKRQ1
✅ Sustitución directa📋 Alternativa de referencia (no en el catálogo)
UCC21520Q-Q1
✅ Sustitución directa ⚠️ Especificaciones sin verificar✓ En stock
$2.85 / unidad
Ver hoja de datos →UCC21521Q-Q1
✅ Sustitución directa ⚠️ Especificaciones sin verificar✓ En stock
$1 / unidad
Ver hoja de datos →UCC21520
✅ Sustitución directa ⚠️ Especificaciones sin verificar✓ En stock
$1.55 / unidad
Ver hoja de datos →UCC21530Q-Q1 Valores máximos y características eléctricas
| Output Peak Current (Source) | 4 A |
| Output Peak Current (Sink) | 6 A |
| Isolation Rating | 5.7 kVRMS (reinforced) |
| Channel-to-Channel Spacing | 3.3 mm |
| CMTI (Common-Mode Transient Immunity) | 125 V/ns (minimum) |
| Maximum Switching Frequency | 5 MHz |
| Number of Channels | 2 |
| Configuration | Low-side, high-side, half-bridge, dual low-side |
| Dead Time | Programmable via DT pin resistor |
| Patilla de habilitación | Yes |
| Input Threshold | TTL and CMOS compatible |
| Driven Device Types | IGBT, Si MOSFET, SiC MOSFET |
| Qualification | AEC-Q100 (automotive) |
| Encapsulado | SOIC-14 (DWK) |
| Tipo de montaje | Surface Mount |
| Estado RoHS | Compliant |
Configuración de pines de UCC21530Q-Q1
| Pin 1 | GNDI — Input-side ground reference |
| Pin 2 | INA — Input channel A (TTL/CMOS compatible) |
| Pin 3 | INB — Input channel B (TTL/CMOS compatible) |
| Pin 4 | DT — Dead-time programming pin (external resistor) |
| Pin 5 | DIS — Disable/enable control |
| Pin 6 | VDDI — Input-side supply voltage |
| Pin 7 | NC — No connect (isolation barrier region) |
| Pin 8 | VDDA — Output A supply voltage (isolated side) |
| Pin 9 | OUTA — Gate drive output A |
| Pin 10 | GND — Output-side ground for channel A |
| Pin 11 | GND — Output-side ground for channel B |
| Pin 12 | OUTB — Gate drive output B |
| Pin 13 | VDDB — Output B supply voltage (isolated side) |
| Pin 14 | NC — No connect |
Aplicaciones típicas
UCC21530Q-Q1 es adecuado para 6 aplicacións: Automotive Traction Inverter, 800V On-Board Charger (OBC), SiC MOSFET Half-Bridge Power Stage, Industrial Motor Drives, Solar String Inverters, Automotive DC-DC Converters and HEV/EV Auxiliaries.
Automotive Traction Inverter
In EV traction inverters, the UCC21530-Q1 drives the gate of SiC MOSFET or IGBT half-bridge legs switching 400V-to-800V DC buses. Its 4A source and 6A sink currents charge and discharge large gate charges quickly, while the guaranteed 125V/ns CMTI prevents false turn-on from high dV/dt switch-node transitions. Programmable dead time via the DT pin lets engineers optimize efficiency versus shoot-through margin, and AEC-Q100 qualification supports automotive production.
Recomendado
800V On-Board Charger (OBC)
In 800V OBC PFC and LLC stages, the UCC21530-Q1 provides reinforced 5.7kVRMS isolation between the low-voltage controller domain and the high-voltage power stage. The TTL/CMOS-compatible inputs interface directly to C2000 PWM outputs, and up to 5MHz capability supports high-frequency LLC designs that shrink magnetics. For systems whose isolation standard demands more than the roughly 3mm package creepage, the enhanced-creepage UCC21530B-Q1 variant should be evaluated, as noted in TI E2E application discussions.
Recomendado
SiC MOSFET Half-Bridge Power Stage
SiC MOSFETs require gate drivers with high CMTI, fast propagation, and low pulse-width distortion to exploit their fast switching. The UCC21530-Q1 delivers best-in-class propagation delay and PWM distortion, and its wide output-side supply range supports the +15V/-xV gate-drive schemes typical of SiC. The 6A sink current rapidly pulls gate charge out during turn-off, minimizing switching losses at frequencies up to 5MHz in hard-switched bridges.
Recomendado
Industrial Motor Drives
In industrial three-phase motor inverters, the UCC21530-Q1 drives IGBT or SiC gate terminals for each phase leg while the reinforced isolation barrier protects the control electronics from mains-referenced potentials. Its interlock and programmable dead time prevent shoot-through in half-bridge configurations, and the enable pin permits safe fault shutdown. Industrial-grade UCC21530 offers the same performance where AEC-Q100 is unnecessary, allowing one layout to serve both markets.
Recomendado
Solar String Inverters
Photovoltaic string inverter boost and DC-AC stages benefit from the UCC21530-Q1's reinforced isolation and high-frequency capability. Boost switches switching at 50-150kHz keep inductor size and cost down while the driver's low pulse-width distortion preserves duty-cycle accuracy across the isolation barrier, improving MPPT efficiency. The 5.7kVRMS barrier satisfies the insulation coordination typically required between the PV input and grid-tied control circuitry.
Recomendado
Automotive DC-DC Converters and HEV/EV Auxiliaries
Auxiliary automotive DC-DC converters (for example 400V-to-12V in HEV/EV systems) use the UCC21530-Q1 to drive bridge switches in phase-shifted full-bridge or LLC topologies. AEC-Q100 grade 1 suitability, 125V/ns CMTI, and programmable dead time enable robust, efficient conversion, while the enable pin supports system-level fault handling. XAIPART carries companion TI power-management parts such as LM5176QPWPRQ1 for the low-voltage side and UCC25800-Q1 bias supplies.
Recomendado
Resumen de productos recomendados
Datos de referencia de ingeniería para UCC21530Q-Q1 — comparación, orientación de diseño e información de cumplimiento.
Guía de selección
Comparación con alternativas
| Parámetro | Este producto | UCC21530 | UCC21530BQDWKRQ1 | UCC21520Q-Q1 |
|---|---|---|---|---|
| Package | SOIC-14 (DWK) | SOIC-14 (DWK) - same | SOIC-14 (DWK) - same, enhanced creepage | SOIC-14 (DWK) - same |
| Brand | Texas Instruments | Texas Instruments | Texas Instruments | Texas Instruments |
| Dead Time | Programmable (DT pin) | Programmable (DT pin) | Programmable (DT pin) | Family-configured options |
| AEC-Q100 | Qualified (automotive) | Not qualified (industrial) | Qualified (automotive) | Qualified (automotive) |
Diferenciadores clave
- AEC-Q100 automotive qualification (frente a UCC21530)
- Programmable dead time with one resistor (frente a UCC21520Q-Q1)
- 6A sink current capability (frente a UCC21520Q-Q1)
- Standard 3.3mm channel-to-channel spacing (frente a UCC21530BQDWKRQ1)
Notas de diseño
Place 1uF + 100nF low-ESR ceramic decoupling capacitors directly at VDDA and VDDB, each with its own ground return to GND. The 4A/6A peak gate currents create fast di/dt loops; keep the OUT-to-GND loop area minimal to limit ringing. On the input side, decouple VDDI with 100nF. Follow the SOIC-14 DWK layout section of the TI UCC21530-Q1 datasheet for creepage and clearance compliance on the isolated barrier.
For 800V-class designs, verify creepage: TI E2E forum discussion (Feb 2025) notes the standard DWK package offers about 3mm creepage, while some 800V OBC specifications require up to 4mm. In such cases, evaluate the UCC21530BQDWKRQ1 enhanced-creepage variant in the same footprint. Also size the DT resistor per the datasheet equation - an incorrect value erodes shoot-through margin with SiC switches.
Gate-drive power dissipation is P = Qg * Vdrive * fsw * 2 (two channels). At Qg = 100nC, Vdrive = 18V, and fsw = 100kHz per channel, each output dissipates roughly 0.36W. Confirm junction temperature stays within the datasheet limit using the DWK package theta-JA and account for ambient temperature in sealed automotive enclosures before finalizing switching frequency.
The 125V/ns minimum CMTI guards against dV/dt-induced false triggering, but Miller clamp or negative gate bias may still be needed for SiC bridges with very high slew rates. Route the DT pin trace away from high-dV/dt switch-node copper, and use a ground plane on the input side to keep the TTL/CMOS INA/INB signals clean against switching noise.
Información de cumplimiento
AEC-Q100 qualified per TI product page (automotive grade). RoHS and lead-free status per standard TI automotive packaging; verify on TI quality portal.
