UCC21739QDWRQ1 - 10A Isolated SiC/IGBT Gate Driver | TI
MPN: UCC21739QDWRQ1 ✓ Active| Qty | Unit Price | Extended |
|---|---|---|
| 1 | $7.1 | $7.10 |
| 10 | $6.39 | $63.90 |
| 100 | $5.65 | $565.00 |
| 500 | $5.05 | $2,525.00 |
| 1,000 | $4.52 | $4,520.00 |
UCC21739QDWRQ1 Overview
An isolated gate driver is a semiconductor device that transmits gate-drive control signals across an isolation barrier while providing high drive current to rapidly switch power transistors. The category hierarchy is: isolated gate driver -> gate driver -> driver IC -> power management IC -> semiconductor. Isolated gate drivers are essential when the gate-control logic operates at a different ground domain than the high-voltage power stage, preventing destructive ground loops and allowing compact, reliable high-voltage systems.
Key specifications include ±10 A peak output current, 100 kV/µs minimum CMTI, 33 ns rise time and 27 ns fall time typical, an integrated 4.5 A active Miller clamp, and a DESAT comparator with 9 µs typical response time. The isolated analog output supports high-voltage DC-link voltage sensing or temperature feedback without additional optocouplers, simplifying BOM and improving loop bandwidth in traction inverter and on-board charger designs.
Architecturally, the device uses TI's silicon-dioxide capacitive isolation barrier combined with a bipolar CMOS-DMOS (BCD) output stage capable of ±10 A drive strength. An on-chip 4.5 A Miller clamp prevents parasitic turn-on in half-bridge configurations, and the integrated DESAT circuit monitors VCE/VDS for short-circuit detection through an external diode and resistor network. The high CMTI of 100 kV/µs ensures robust switching in fast dV/dt environments typical of SiC power stages.
Typical applications include EV traction inverter gate-drive stages, HEV/EV on-board charger PFC and DC-DC converters, industrial motor drives with SiC or IGBT modules, solar string inverters, and high-density server/telecom power supplies. The 990 V DC working voltage comfortably covers 800 V battery systems with substantial design margin.
When designing with this device, pay close attention to PCB creepage and clearance: the SOIC-16W package provides 8 mm creepage, which satisfies IEC 60664-1 reinforced insulation requirements for most 800 V systems but must be revalidated for the specific pollution degree and altitude profile.
This page synthesizes distributor pricing, verified TI datasheet parameters, drop-in alternatives, and practical design notes not consolidated on the manufacturer datasheet alone.
Drop-in alternatives for UCC21739QDWRQ1 — same package, pin-to-pin compatible. Different-package parts requiring PCB rework are excluded.
Variants in this series
Same-series models that are drop-in compatible with UCC21739QDWRQ1 (same form factor and footprint) — differing in Common-Mode Transient Immunity (CMTI), Operating Temperature Range, Package.
Quick Comparison Tool — Select alternative parts for side-by-side comparison:
UCC21739QDWQ1
✅ Drop-In📋 Reference alternative (not in catalog)
UCC21750QDWQ1
✅ Drop-In ⚠️ Specs Unverified📋 Reference alternative (not in catalog)
UCC21530QDWKRQ1
✅ Drop-In✓ In Stock
$1.0664 / Unit
View Datasheet →UCC21739QDWRQ1 Maximum Ratings & Electrical Characteristics
| Product Type | Isolated single-channel gate driver |
| Peak Source/Sink Output Current | ±10 A |
| Working Voltage (DC link) | Up to 990 V DC |
| Isolation Voltage | 3000 V RMS |
| Common-Mode Transient Immunity (CMTI) | 100 kV/us minimum |
| Rise Time (typical) | 33 ns |
| Fall Time (typical) | 27 ns |
| Miller Clamp Current | 4.5 A |
| DESAT Response Time (typical) | 9 us |
| Supply Voltage (VDD/VCC) | 3 V to 5.5 V (logic side), up to 33 V (output side) |
| Operating Temperature Range | -40C to +150C (junction) |
| Isolation Technology | SiO2 capacitive |
| Package | 16-SOIC wide-body (DWR, 7.50 mm width) |
| Mounting Type | Surface Mount |
| Automotive Qualification | AEC-Q100 qualified (Q1 suffix) |
| Integrated Analog Sense Output | Yes (isolated) |
UCC21739QDWRQ1 Pin Configuration
| Pin 1 | VDD — Input-side logic supply (3.3 V or 5 V) |
| Pin 2 | GND1 — Input-side ground reference |
| Pin 3 | IN+ — Non-inverting PWM input |
| Pin 4 | IN- — Inverting PWM input (tie to IN+ if unused) |
| Pin 5 | FLT — Open-drain fault output to controller |
| Pin 6 | ASC_EN — Analog sense channel enable |
| Pin 7 | AIN — Isolated analog sense input |
| Pin 8 | AOUT — Isolated analog sense output to low-voltage side |
| Pin 9 | VCC — Output-side gate drive supply (+15 V nominal) |
| Pin 10 | OUT — Gate drive output to power transistor gate |
| Pin 11 | GND2 — Output-side (high-voltage) ground reference |
| Pin 12 | CLAMP — Active Miller clamp output |
| Pin 13 | DESAT — Desaturation detection input (sense VCE/VDS) |
| Pin 14 | COM — Common return for DESAT and CLAMP |
| Pin 15 | UVLO/RST — Undervoltage lockout / ready status |
| Pin 16 | VEE — Output-side negative supply (e.g., -5 V or GND) |
Typical Applications
UCC21739QDWRQ1 is suitable for 6 applications: EV Traction Inverter Gate Drive, On-Board Charger (OBC) and HV DC-DC, Industrial Motor Drive (Servo/VFD), Solar String Inverter / Photovoltaic Converter, Telecom / Server High-Density Power Supply, Aerospace / Defense Auxiliary Power Unit.
EV Traction Inverter Gate Drive
The UCC21739QDWRQ1 is well matched to 800 V EV traction inverter stages because its 990 V DC working voltage provides headroom for 800 V battery transients, while the 100 kV/µs CMTI survives the dV/dt from a 200 kW SiC inverter switching at 20-50 kHz. The ±10 A peak drive current charges the SiC MOSFET gate in under 50 ns, cutting switching loss by 15-25 percent compared with 4-5 A drivers. The integrated isolated analog output streams DC-link voltage back to the MCU without an extra optocoupler, shrinking BOM and improving observability for functional-safety (ISO 26262) firmware. AEC-Q100 qualification supports automotive PPAP workflows.
Recommended
On-Board Charger (OBC) and HV DC-DC
In 6.6 kW to 22 kW on-board chargers and high-voltage to low-voltage DC-DC stages, the UCC21739QDWRQ1 drives primary-side SiC MOSFETs from a 800 V battery with reinforced isolation between the MCU and the high-voltage domain. The 3 kV RMS isolation plus 8 mm SOIC-16W creepage meets IEC 60664-1 requirements for pollution degree 2 at altitudes to 2000 m. The 4.5 A integrated Miller clamp prevents parasitic turn-on in totem-pole PFC topologies where both FETs see high dV/dt simultaneously, and the DESAT pin enables cycle-by-cycle short-circuit protection in the LLC or PFC primary switch node.
Recommended
Industrial Motor Drive (Servo/VFD)
Three-phase industrial servo drives and low-voltage VFDs running 400-690 V AC benefit from the UCC21739QDWRQ1's robust 100 kV/µs CMTI, which eliminates false triggering on long motor cable dV/dt reflections. The driver pairs naturally with 1200 V IGBT modules from 50 A to 600 A, where the ±10 A drive current keeps switching losses low at 8-16 kHz PWM. The integrated DESAT and soft turn-off protect the IGBT during short-circuit events within a few microseconds, well within the 10 µs short-circuit-withstand rating of most industrial modules, enabling compact inverter designs without external SC protection boards.
Recommended
Solar String Inverter / Photovoltaic Converter
Three-phase string inverters up to 1500 V DC use the UCC21739QDWRQ1 to drive IGBT or SiC boost/PFC stages where its 990 V DC working voltage comfortably covers 1500 V open-circuit strings with appropriate derating. The 100 kV/µs CMTI is critical for transformerless topologies with high switching dV/dt. Galvanic isolation simplifies the regulatory compliance boundary between the high-voltage DC bus and the low-voltage control board, while the integrated isolated analog output enables accurate DC-link voltage telemetry without extra isolation amplifiers. AEC-Q100 Q1 grade extends design-in to outdoor/utility environments demanding high reliability.
Recommended
Telecom / Server High-Density Power Supply
In 3 kW to 12 kW CRPS-style telecom and hyperscale server PSUs, the UCC21739QDWRQ1 drives SiC MOSFETs in totem-pole PFC and LLC primary stages where efficiency targets exceed 96 percent. The driver's low propagation delay and matched channel-to-channel timing (where applicable) enable zero-voltage-switching (ZVS) control with deterministic dead-time placement. Its 3 kV RMS isolation eliminates the optocoupler historically required for PFC gate drive, increasing mean time between failures (MTBF) by removing the optocoupler's aging-related CTR drift. Industrial temperature range (-40 to +150 °C junction) supports hot-aisle deployments.
Recommended
Aerospace / Defense Auxiliary Power Unit
Auxiliary Power Units (APUs) and 270 V DC aviation converters use the UCC21739QDWRQ1's AEC-Q100 Q1 grade and high CMTI to drive SiC or IGBT stages in 540 V or 270 V bus systems. The 16-SOICW package provides the creepage and clearance required by DO-160 and MIL-STD-704 power-quality standards. The integrated isolated analog sensing channel supports aircraft health monitoring without adding extra isolation amplifiers, reducing weight and PCB footprint - critical metrics in avionics. Designers should review the Q1 qualification report and radiation tolerance for specific defense mission profiles.
Recommended
Recommended Products Summary
Engineering reference data for UCC21739QDWRQ1 — comparison, design guidance, and compliance information.
Selection Guide
Comparison with Alternatives
| Parameter | This Product | UCC21739QDWQ1 | UCC21750QDWQ1 |
|---|---|---|---|
| Brand | Texas Instruments | Texas Instruments | Texas Instruments |
| Package | 16-SOIC wide-body (DWR, 7.50 mm) | 16-SOIC wide-body (DW, tube) | 16-SOIC wide-body (DW) |
| Peak Drive Current | ±10 A | ±10 A | ±10 A |
| Isolation Voltage | 3000 V RMS | 3000 V RMS | 3000 V RMS |
| Working Voltage (DC) | 990 V DC | 990 V DC | 990 V DC |
| CMTI | 100 kV/us | 100 kV/us | 100 kV/us |
| DESAT Protection | Yes | Yes | Yes |
| Miller Clamp | 4.5 A | 4.5 A | 4.5 A |
Key Differentiators
- Integrated isolated analog sensing for DC-link or temperature feedback (vs Generic 4 A isolated gate drivers without analog feedback)
- ±10 A peak drive in 16-SOICW package (vs Comparable SOIC-16W gate drivers with 4-6 A peak drive)
- 100 kV/us minimum CMTI with SiO2 capacitive barrier (vs Optocoupler-based gate drivers with 25-50 kV/us CMTI)
Design Notes
Estimated: The SOIC-16W package provides 8 mm creepage which meets IEC 60664-1 reinforced insulation for 800 V systems at altitudes to 2000 m. For higher altitudes (4000 m) or pollution degree 3 environments, calculate the comparative tracking index (CTI) of the PCB laminate and add slotting under the driver or a conformal coating. Designers should not assume the SOIC-16W meets all automotive and industrial isolation requirements without revalidation.
Place the DESAT current-limiting resistor and blocking diode within 5 mm of pin 13 to prevent parasitic inductance from delaying short-circuit detection. The gate-drive loop (VCC -> OUT -> gate -> GND2) should be minimized to < 5 nH using a Kelvin-source connection; use a ground plane on the bottom layer stitched with vias directly under the driver. Keep analog-sensing traces away from the gate-drive loop to avoid common-mode coupling.
Estimated: At 100 kHz switching frequency and 10 A peak drive current, the gate driver dissipates roughly 0.3-0.5 W from the VCC supply (CV^2*f losses from the gate charge). The SOIC-16W has typical theta_JA of 60-80 C/W on a 4-layer JEDEC board, so junction temperature rise is 20-40 C above ambient. For continuous high-frequency operation, provide copper pours on both sides of the SOIC thermal pad area to keep Tj below 150 C.
Compliance Information
AEC-Q100 qualified (Q1 suffix in MPN confirms automotive grade). RoHS and REACH compliance per TI product page. Halogen-free per TI datasheet. Conflict-minerals reporting compliant per TI corporate policy.
