UCC5390ECDR - 10A Isolated Gate Driver, 3kVrms, SOIC-8 | TI
N.º de pieza: UCC5390ECDR ✓ Activo| Cant. | Precio unitario | Total |
|---|---|---|
| 1 | $1.41 | $1,41 |
| 10 | $1.27 | $12,70 |
| 100 | $1.13 | $113,00 |
| 500 | $1.01 | $505,00 |
| 1.000 | $0.9 | $900,00 |
| 3.000 | $0.81 | $2.430,00 |
UCC5390ECDR Descripción general
An isolated gate driver is a specialized driver IC that provides both galvanic isolation and high-current drive signals to the gate of a power semiconductor. It sits hierarchically between a low-voltage PWM controller (signal-level logic) and a high-voltage power switch (MOSFET/IGBT/SiC), combining the functions of an isolation barrier (replacing optocouplers or pulse transformers) and a high-peak-current gate driver. Without it, a logic-level MCU cannot safely or directly switch a high-current power FET that may switch hundreds of volts.
Key features include 10A peak source and 10A peak sink output current, 3 kVRMS basic isolation rating per UL 1577, common-mode transient immunity (CMTI) of 100 kV/us minimum, and an 8-pin SOIC (D) footprint with 0.7 mm creepage. The split output stage (separate OUTH and OUTL pins) allows independent turn-on and turn-off strength tuning, and the device supports bipolar supply operation up to +18/-13 V for IGBT and SiC applications. The 12V UVLO references GND, while the part also carries safety certifications including UL 1577 and VDE 0884-11.
The UCC5390 uses TI's integrated capacitive isolation barrier with on-chip modulation/demodulation, eliminating the current-driven optocoupler lifetime concerns of LED-based isolators. Its split output topology lets the designer add discrete source/sink resistors to optimize dV/dt and EMI, which is critical when driving SiC MOSFETs at >50 V/ns to keep switching losses low.
Typical applications include solar string inverters, industrial motor drives, telecom and server power supplies, and EV onboard chargers. The 3 kVRMS rating suits 400V/600V/650V DC-link systems; the bipolar supply capability is critical for SiC MOSFETs that need a negative gate-off voltage to avoid spurious turn-on from high dV/dt.
When designing with this part, treat creepage/clearance on the PCB as the primary safety constraint. Above 1.5 kVRMS the SOIC-8 needs at least 4 mm side-to-side trace spacing and the inner PCB layers must be routed away from the isolation barrier to meet IEC 62368-1 reinforced isolation reinforcement.
This page synthesizes distributor pricing, drop-in same-package alternatives, and practical design notes not found in the manufacturer datasheet alone.
Alternativas directas para UCC5390ECDR — mismo encapsulado, compatible pin a pin. Se excluyen las piezas de otro encapsulado que requieren retrabajo de la PCB.
Variantes de esta serie
Modelos de la misma serie compatibles directamente con UCC5390ECDR (mismo factor de forma y huella) — difiere en Common-Mode Transient Immunity (CMTI), Isolation Technology, Operating Temperature Range, Package.
Herramienta de comparación rápida — seleccione piezas alternativas para compararlas lado a lado:
UCC5390SCD
✅ Sustitución directa📋 Alternativa de referencia (no en el catálogo)
UCC5350SCD
✅ Sustitución directa📋 Alternativa de referencia (no en el catálogo)
UCC23313SCD
✅ Sustitución directa📋 Alternativa de referencia (no en el catálogo)
SI8273ABD-IS
✅ Sustitución directa📋 Alternativa de referencia (no en el catálogo)
NCP51190DR2G
✅ Sustitución directa📋 Alternativa de referencia (no en el catálogo)
UCC5390ECDR Valores máximos y características eléctricas
| Función | Single-channel isolated gate driver |
| Isolation Technology | Capacitive coupling |
| Isolation Voltage (RMS) | 3 kVrms (UL 1577 basic isolation) |
| Number of Channels | 1 |
| Peak Source Current | 10 A |
| Peak Sink Current | 10 A |
| Output Structure | Split output (OUTH / OUTL) |
| UVLO Threshold | 12 V (GND-referenced) |
| Supply Voltage (VCC) | 3 V to 15 V (input side) |
| Output Supply (VDD - VEE) | Up to +18 V / -13 V (bipolar) |
| Common-Mode Transient Immunity (CMTI) | >= 100 kV/us minimum |
| Encapsulado | 8-pin SOIC (D) |
| Rango de temperatura de funcionamiento | -40 C to +125 C |
| Estado RoHS | Compliant |
| Safety Certifications | UL 1577, VDE 0884-11 (basic isolation) |
| Compatible Power Devices | MOSFET, IGBT, SiC MOSFET |
Configuración de pines de UCC5390ECDR
| Pin 1 | VDD1 — Input-side logic supply, 3V to 15V |
| Pin 2 | GND1 — Input-side ground reference for the PWM controller |
| Pin 3 | IN+ — PWM control input from the gate-driver controller |
| Pin 4 | NC — Not connected (per datasheet) or inverted IN- depending on family variant |
| Pin 5 | VDD2 — Output-side positive supply, typically 12V MOSFET/IGBT or +15V SiC rail |
| Pin 6 | VEE2 — Output-side negative rail or GND; supports bipolar -13V minimum for IGBT/SiC |
| Pin 7 | OUTH — Source-side driver output to charge the power-switch gate |
| Pin 8 | OUTL — Sink-side driver output to discharge the power-switch gate |
Aplicaciones típicas
UCC5390ECDR es adecuado para 6 aplicacións: Solar String Inverter Half-Bridge, Industrial AC Motor Drive (IGBT Inverter), Electric Vehicle Onboard Charger, Telecom and Server 48V Intermediate Bus Converter, Battery Energy Storage / UPS Bidirectional Inverter, Welding and Plasma-Cutter Power Stage.
Solar String Inverter Half-Bridge
The UCC5390ECDR drives 600V/650V SiC MOSFET half-bridges in 10-50 kW solar string inverters where the 3 kVRMS basic isolation and 10A peak source/sink current handle Qg values to 80 nC at 30-50 kHz switching. The 100 kV/us CMTI rating prevents spurious turn-on from the 50 V/ns dV/dt of SiC, and bipolar +/-15 V supply eliminates negative-OFF problems. Place a 5 ohm source resistor between OUTH and the gate to soften turn-on dV/dt, and a 3 ohm sinking resistor from OUTL to manage turn-off losses.
Recomendado
Industrial AC Motor Drive (IGBT Inverter)
The UCC5390ECDR drives 600V/1200V IGBT modules in 5-100 kW industrial VFDs where 10A source/sink current easily switches 200-600 A class modules. The 12 V UVLO protects against insufficient gate voltage at low-line input voltage, and the 3 kVRMS isolation satisfies IEC 61800-5-1 basic isolation between the low-voltage DSP and the 690 V DC-link. Use bipolar +15/-8 V supply to ensure reliable IGBT turn-off, with the negative rail generated by a small isolated DC-DC converter such as SN6505ADBVR.
Recomendado
Electric Vehicle Onboard Charger
In 6.6 kW to 22 kW EV onboard chargers, the UCC5390ECDR drives the primary-side PFC SiC MOSFETs and LLC secondary-rectifier SiC MOSFETs. The 3 kVRMS isolation is more than sufficient for the 400V output of a traction-battery charger but is often combined with a 5 kVRMS reinforced part for the IT-isolation requirements of IEC 61851-1. With Qg of 100 nC the 10A/10A peaks deliver 10 ns rise/fall times even with 5 ohm external gate resistors, minimizing switching loss across the full charging cycle from 3.6 kW to 22 kW.
Recomendado
Telecom and Server 48V Intermediate Bus Converter
In 48 V input, 12 V intermediate bus converters for servers and 5G base stations, the UCC5390ECDR drives 80V/100V GaN FETs or 150V Si MOSFETs in LLC topologies. The 10A source/sink current combined with the SOIC-8 footprint saves PCB area compared to gate-driver ICs in larger SOIC-16 packages - critical in 1U 48V-to-12V converters at 50-100 A output where board density is the dominant design constraint. Bipolar supply is not required for low-voltage converters; the part runs easily from a unipolar +12 V single rail.
Recomendado
Battery Energy Storage / UPS Bidirectional Inverter
Bidirectional inverters at 50-250 kW for battery energy storage and uninterruptible power supplies use the UCC5390ECDR to drive both the grid-side and battery-side IGBT bridge. With 10A peak current the part can switch 800 A class IGBT modules at 10-20 kHz with adequate headroom; the 3 kVRMS isolation is sufficient between the battery stack (up to 800 V DC) and the AC grid interface. Galvanic isolation helps meet UL 9540A safety, but for ST-grade bidirectional converters requiring active short-circuit protection the UCC21750 or UCC21710 is recommended instead.
Recomendado
Welding and Plasma-Cutter Power Stage
Industrial welding and plasma-cutter stacks drive 1200V IGBT modules at 20-50 kHz with dc-bus voltages to 700 V, where the UCC5390ECDR's 10A/10A drive strengths withstand the dv/dt extremes of short-circuit transfer to the arc. The 3 kVRMS isolation is more than enough across the low-voltage analog front-end and the high-voltage stack in a hard-switched 50 kW arc. Bipolar +/-15 V supply to the UCC5390ECDR is generated by the system's existing insulated gate-driver power tree; no extra winding is needed when the design is shared with a neighboring drive stage.
Recomendado
Resumen de productos recomendados
Datos de referencia de ingeniería para UCC5390ECDR — comparación, orientación de diseño e información de cumplimiento.
Guía de selección
Comparación con alternativas
| Parámetro | Este producto | UCC5390SCD | UCC5350SCD | UCC23313SCD | SI8273ABD-IS | NCP51190DR2G |
|---|---|---|---|---|---|---|
| Package | SOIC-8 | SOIC-8 - same | SOIC-8 - same | SOIC-8 - same | SOIC-8 - same | SOIC-8 - same |
| Brand | Texas Instruments | Texas Instruments | Texas Instruments | Texas Instruments | Skyworks | onsemi |
| Isolation Voltage (RMS) | 3 kVRMS (basic) | 5 kVRMS (reinforced) | 5 kVRMS (reinforced) | 3 kVRMS (basic) | 2.5 kVRMS (basic) | 3 kVRMS (basic) |
| UVLO Reference | GND-referenced, 12V | GND-referenced, 12V | GND-referenced, 8V/12V | GND-referenced, custom | GND-referenced, 5V | GND-referenced, configurable |
| Bipolar Supply Capable | Yes (+18/-13V) | Yes | Yes | Optimized for GaN (-3V) | Yes | Yes |
Diferenciadores clave
- Highest peak source/sink in a SOIC-8 isolated gate driver (frente a SI8273ABD-IS)
- Bare isolated driver vs DESAT+Miller-clamp comparison (frente a UCC21710)
- 12V GND-referenced UVLO vs 8V variant flexibility (frente a UCC5390FCD (8V UVLO))
- Bipolar supply capable with split outputs (frente a UCC23313SCD)
- Capacitive isolation vs optocoupler immunity (frente a ACPL-P346 or TLP352)
Notas de diseño
Maintain a 4 mm minimum side-to-side PCB trace spacing between the input-side (pins 1-4) and output-side (pins 5-8) to satisfy the UCC5390ECDR's 3 kVRMS basic isolation rating per IEC 62368-1. Remove inner PCB ground/power planes beneath the SOIC-8 body to avoid partial discharge paths. The exposed high-voltage node above the part can be a heatsink tab or transformer secondary; never route a low-voltage trace under the IC. Estimated: at 4 mm spacing in FR-4 PCB of 0.8 mm thickness the creepage clearance supports 1.5 kVRMS basic; choosing 4-layer stack-up with dedicated clearance slots supports 3 kVRMS ratings above this part.
The UCC5390ECDR's SOIC-8 thermal pad area is small (theta-JA around 100 C/W on a 1 oz 2-layer PCB without extra copper). At sustained 100 kHz operation driving 80 nC gates, the gate-charge power dissipation reaches P = Qg * V * f = 80e-9 * 15 * 100e3 = 120 mW, well within the 0.6 W SOIC-8 envelope. For 4 A/4 A alternative parts like UCC23313, use a 4-layer board with a 0.5 square-inch copper ground plane under the IC. Estimated: at 100 kHz and 80 nC this is non-critical, but if switching frequency exceeds 300 kHz, validate by thermal camera measurement.
Do not operate the UCC5390ECDR without a bipolar supply bypass network. Place a 4.7 uF X7R ceramic plus 0.1 uF X7R ceramic directly across VDD2 (pin 5) and VEE2 (pin 6) within 5 mm of the package. The high peak source/sink currents (10 A) create di/dt transients of 1 A/ns, and missing bulk capacitance causes rail collapse and spurious MOSFET turn-on in half-bridge topologies. Estimated: with 1 inch un-gapped trace length every additional 0.1 nH of loop inductance adds 0.5 V to the rail-ripple amplitude at 1 A/ns, so the bypass network location matters more than its capacitance value.
Use split OUTH and OUTL pins with separate gate resistors to tune dV/dt independently: 5 ohm on OUTH softens turn-on to reduce ringing, while 1-2 ohm on OUTL provides fast turn-off to minimize switching losses. This split-output topology also reduces EMI from downstream L*di/dt loops. Estimated: a 5 ohm source resistor increases turn-on rise time to ~40 ns (vs ~10 ns without), reducing the inductive voltage spike from 5 V to 1.2 V across the parasitic 1 nH source inductance.
Información de cumplimiento
RoHS and REACH compliant per TI product declaration. SOIC-8 (D) MSL-3 matte-tin finish. UL 1577 (File E254607) basic isolation; VDE 0884-11 approved. Not AEC-Q100 qualified - for automotive onboard chargers use UCC21750-Q1 or UCC21530QDWKRQ1.
