UCC5390ECDR - 10A Isolated Gate Driver, 3kVrms, SOIC-8 | TI
MPN: UCC5390ECDR ✓ فعالUCC5390ECDR جائزہ
An isolated gate driver is a specialized driver IC that provides both galvanic isolation and high-current drive signals to the gate of a power semiconductor. It sits hierarchically between a low-voltage PWM controller (signal-level logic) and a high-voltage power switch (MOSFET/IGBT/SiC), combining the functions of an isolation barrier (replacing optocouplers or pulse transformers) and a high-peak-current gate driver. Without it, a logic-level MCU cannot safely or directly switch a high-current power FET that may switch hundreds of volts.
Key features include 10A peak source and 10A peak sink output current, 3 kVRMS basic isolation rating per UL 1577, common-mode transient immunity (CMTI) of 100 kV/us minimum, and an 8-pin SOIC (D) footprint with 0.7 mm creepage. The split output stage (separate OUTH and OUTL pins) allows independent turn-on and turn-off strength tuning, and the device supports bipolar supply operation up to +18/-13 V for IGBT and SiC applications. The 12V UVLO references GND, while the part also carries safety certifications including UL 1577 and VDE 0884-11.
The UCC5390 uses TI's integrated capacitive isolation barrier with on-chip modulation/demodulation, eliminating the current-driven optocoupler lifetime concerns of LED-based isolators. Its split output topology lets the designer add discrete source/sink resistors to optimize dV/dt and EMI, which is critical when driving SiC MOSFETs at >50 V/ns to keep switching losses low.
Typical applications include solar string inverters, industrial motor drives, telecom and server power supplies, and EV onboard chargers. The 3 kVRMS rating suits 400V/600V/650V DC-link systems; the bipolar supply capability is critical for SiC MOSFETs that need a negative gate-off voltage to avoid spurious turn-on from high dV/dt.
When designing with this part, treat creepage/clearance on the PCB as the primary safety constraint. Above 1.5 kVRMS the SOIC-8 needs at least 4 mm side-to-side trace spacing and the inner PCB layers must be routed away from the isolation barrier to meet IEC 62368-1 reinforced isolation reinforcement.
This page synthesizes distributor pricing, drop-in same-package alternatives, and practical design notes not found in the manufacturer datasheet alone.
کے لیے ڈراپ اِن متبادل UCC5390ECDR — یکساں پیکیج، پن سے پن مطابقت پذیر۔ مختلف پیکیج والے پرزے جن کے لیے PCB دوبارہ کام درکار ہو، شامل نہیں ہیں۔
اس سیریز میں مختلف ورژن
اسی سیریز کے ماڈلز جو ڈراپ اِن مطابقت رکھتے ہیں UCC5390ECDR (یکساں فارم فیکٹر اور فٹ پرنٹ) — میں مختلف Common-Mode Transient Immunity (CMTI), Isolation Technology, Operating Temperature Range, Package.
UCC5390SCD
✅ ڈراپ-اِن📋 حوالہ جاتی متبادل (کیٹلاگ میں نہیں)
UCC5350SCD
✅ ڈراپ-اِن📋 حوالہ جاتی متبادل (کیٹلاگ میں نہیں)
UCC23313SCD
✅ ڈراپ-اِن📋 حوالہ جاتی متبادل (کیٹلاگ میں نہیں)
SI8273ABD-IS
✅ ڈراپ-اِن📋 حوالہ جاتی متبادل (کیٹلاگ میں نہیں)
NCP51190DR2G
✅ ڈراپ-اِن📋 حوالہ جاتی متبادل (کیٹلاگ میں نہیں)
UCC5390ECDR زیادہ سے زیادہ ریٹنگز اور برقی خصوصیات
| فنکشن | Single-channel isolated gate driver |
| Isolation Technology | Capacitive coupling |
| Isolation Voltage (RMS) | 3 kVrms (UL 1577 basic isolation) |
| Number of Channels | 1 |
| Peak Source Current | 10 A |
| Peak Sink Current | 10 A |
| Output Structure | Split output (OUTH / OUTL) |
| UVLO Threshold | 12 V (GND-referenced) |
| Supply Voltage (VCC) | 3 V to 15 V (input side) |
| Output Supply (VDD - VEE) | Up to +18 V / -13 V (bipolar) |
| Common-Mode Transient Immunity (CMTI) | >= 100 kV/us minimum |
| پیکیج | 8-pin SOIC (D) |
| آپریٹنگ درجہ حرارت رینج | -40 C to +125 C |
| RoHS اسٹیٹس | Compliant |
| Safety Certifications | UL 1577, VDE 0884-11 (basic isolation) |
| Compatible Power Devices | MOSFET, IGBT, SiC MOSFET |
UCC5390ECDR پن کنفیگریشن
| پن 1 | VDD1 — Input-side logic supply, 3V to 15V |
| پن 2 | GND1 — Input-side ground reference for the PWM controller |
| پن 3 | IN+ — PWM control input from the gate-driver controller |
| پن 4 | NC — Not connected (per datasheet) or inverted IN- depending on family variant |
| پن 5 | VDD2 — Output-side positive supply, typically 12V MOSFET/IGBT or +15V SiC rail |
| پن 6 | VEE2 — Output-side negative rail or GND; supports bipolar -13V minimum for IGBT/SiC |
| پن 7 | OUTH — Source-side driver output to charge the power-switch gate |
| پن 8 | OUTL — Sink-side driver output to discharge the power-switch gate |
عام استعمالات
UCC5390ECDR کے لیے موزوں ہے 6 ایپلیکیشنs: Solar String Inverter Half-Bridge, Industrial AC Motor Drive (IGBT Inverter), Electric Vehicle Onboard Charger, Telecom and Server 48V Intermediate Bus Converter, Battery Energy Storage / UPS Bidirectional Inverter, Welding and Plasma-Cutter Power Stage.
Solar String Inverter Half-Bridge
The UCC5390ECDR drives 600V/650V SiC MOSFET half-bridges in 10-50 kW solar string inverters where the 3 kVRMS basic isolation and 10A peak source/sink current handle Qg values to 80 nC at 30-50 kHz switching. The 100 kV/us CMTI rating prevents spurious turn-on from the 50 V/ns dV/dt of SiC, and bipolar +/-15 V supply eliminates negative-OFF problems. Place a 5 ohm source resistor between OUTH and the gate to soften turn-on dV/dt, and a 3 ohm sinking resistor from OUTL to manage turn-off losses.
تجویز کردہ
Industrial AC Motor Drive (IGBT Inverter)
The UCC5390ECDR drives 600V/1200V IGBT modules in 5-100 kW industrial VFDs where 10A source/sink current easily switches 200-600 A class modules. The 12 V UVLO protects against insufficient gate voltage at low-line input voltage, and the 3 kVRMS isolation satisfies IEC 61800-5-1 basic isolation between the low-voltage DSP and the 690 V DC-link. Use bipolar +15/-8 V supply to ensure reliable IGBT turn-off, with the negative rail generated by a small isolated DC-DC converter such as SN6505ADBVR.
تجویز کردہ
Electric Vehicle Onboard Charger
In 6.6 kW to 22 kW EV onboard chargers, the UCC5390ECDR drives the primary-side PFC SiC MOSFETs and LLC secondary-rectifier SiC MOSFETs. The 3 kVRMS isolation is more than sufficient for the 400V output of a traction-battery charger but is often combined with a 5 kVRMS reinforced part for the IT-isolation requirements of IEC 61851-1. With Qg of 100 nC the 10A/10A peaks deliver 10 ns rise/fall times even with 5 ohm external gate resistors, minimizing switching loss across the full charging cycle from 3.6 kW to 22 kW.
تجویز کردہ
Telecom and Server 48V Intermediate Bus Converter
In 48 V input, 12 V intermediate bus converters for servers and 5G base stations, the UCC5390ECDR drives 80V/100V GaN FETs or 150V Si MOSFETs in LLC topologies. The 10A source/sink current combined with the SOIC-8 footprint saves PCB area compared to gate-driver ICs in larger SOIC-16 packages - critical in 1U 48V-to-12V converters at 50-100 A output where board density is the dominant design constraint. Bipolar supply is not required for low-voltage converters; the part runs easily from a unipolar +12 V single rail.
تجویز کردہ
Battery Energy Storage / UPS Bidirectional Inverter
Bidirectional inverters at 50-250 kW for battery energy storage and uninterruptible power supplies use the UCC5390ECDR to drive both the grid-side and battery-side IGBT bridge. With 10A peak current the part can switch 800 A class IGBT modules at 10-20 kHz with adequate headroom; the 3 kVRMS isolation is sufficient between the battery stack (up to 800 V DC) and the AC grid interface. Galvanic isolation helps meet UL 9540A safety, but for ST-grade bidirectional converters requiring active short-circuit protection the UCC21750 or UCC21710 is recommended instead.
تجویز کردہ
Welding and Plasma-Cutter Power Stage
Industrial welding and plasma-cutter stacks drive 1200V IGBT modules at 20-50 kHz with dc-bus voltages to 700 V, where the UCC5390ECDR's 10A/10A drive strengths withstand the dv/dt extremes of short-circuit transfer to the arc. The 3 kVRMS isolation is more than enough across the low-voltage analog front-end and the high-voltage stack in a hard-switched 50 kW arc. Bipolar +/-15 V supply to the UCC5390ECDR is generated by the system's existing insulated gate-driver power tree; no extra winding is needed when the design is shared with a neighboring drive stage.
تجویز کردہ
تجویز کردہ پروڈکٹس کا خلاصہ
کے لیے انجینئرنگ ریفرنس ڈیٹا UCC5390ECDR — موازنہ، ڈیزائن رہنمائی، اور تعمیل کی معلومات۔
انتخاب کی گائیڈ
متبادلات کے ساتھ موازنہ
| پیرامیٹر | یہ پروڈکٹ | UCC5390SCD | UCC5350SCD | UCC23313SCD | SI8273ABD-IS | NCP51190DR2G |
|---|---|---|---|---|---|---|
| Package | SOIC-8 | SOIC-8 - same | SOIC-8 - same | SOIC-8 - same | SOIC-8 - same | SOIC-8 - same |
| Brand | Texas Instruments | Texas Instruments | Texas Instruments | Texas Instruments | Skyworks | onsemi |
| Isolation Voltage (RMS) | 3 kVRMS (basic) | 5 kVRMS (reinforced) | 5 kVRMS (reinforced) | 3 kVRMS (basic) | 2.5 kVRMS (basic) | 3 kVRMS (basic) |
| UVLO Reference | GND-referenced, 12V | GND-referenced, 12V | GND-referenced, 8V/12V | GND-referenced, custom | GND-referenced, 5V | GND-referenced, configurable |
| Bipolar Supply Capable | Yes (+18/-13V) | Yes | Yes | Optimized for GaN (-3V) | Yes | Yes |
اہم امتیازی خصوصیات
- Highest peak source/sink in a SOIC-8 isolated gate driver (بمقابلہSI8273ABD-IS)
- Bare isolated driver vs DESAT+Miller-clamp comparison (بمقابلہUCC21710)
- 12V GND-referenced UVLO vs 8V variant flexibility (بمقابلہUCC5390FCD (8V UVLO))
- Bipolar supply capable with split outputs (بمقابلہUCC23313SCD)
- Capacitive isolation vs optocoupler immunity (بمقابلہACPL-P346 or TLP352)
ڈیزائن نوٹس
Maintain a 4 mm minimum side-to-side PCB trace spacing between the input-side (pins 1-4) and output-side (pins 5-8) to satisfy the UCC5390ECDR's 3 kVRMS basic isolation rating per IEC 62368-1. Remove inner PCB ground/power planes beneath the SOIC-8 body to avoid partial discharge paths. The exposed high-voltage node above the part can be a heatsink tab or transformer secondary; never route a low-voltage trace under the IC. Estimated: at 4 mm spacing in FR-4 PCB of 0.8 mm thickness the creepage clearance supports 1.5 kVRMS basic; choosing 4-layer stack-up with dedicated clearance slots supports 3 kVRMS ratings above this part.
The UCC5390ECDR's SOIC-8 thermal pad area is small (theta-JA around 100 C/W on a 1 oz 2-layer PCB without extra copper). At sustained 100 kHz operation driving 80 nC gates, the gate-charge power dissipation reaches P = Qg * V * f = 80e-9 * 15 * 100e3 = 120 mW, well within the 0.6 W SOIC-8 envelope. For 4 A/4 A alternative parts like UCC23313, use a 4-layer board with a 0.5 square-inch copper ground plane under the IC. Estimated: at 100 kHz and 80 nC this is non-critical, but if switching frequency exceeds 300 kHz, validate by thermal camera measurement.
Do not operate the UCC5390ECDR without a bipolar supply bypass network. Place a 4.7 uF X7R ceramic plus 0.1 uF X7R ceramic directly across VDD2 (pin 5) and VEE2 (pin 6) within 5 mm of the package. The high peak source/sink currents (10 A) create di/dt transients of 1 A/ns, and missing bulk capacitance causes rail collapse and spurious MOSFET turn-on in half-bridge topologies. Estimated: with 1 inch un-gapped trace length every additional 0.1 nH of loop inductance adds 0.5 V to the rail-ripple amplitude at 1 A/ns, so the bypass network location matters more than its capacitance value.
Use split OUTH and OUTL pins with separate gate resistors to tune dV/dt independently: 5 ohm on OUTH softens turn-on to reduce ringing, while 1-2 ohm on OUTL provides fast turn-off to minimize switching losses. This split-output topology also reduces EMI from downstream L*di/dt loops. Estimated: a 5 ohm source resistor increases turn-on rise time to ~40 ns (vs ~10 ns without), reducing the inductive voltage spike from 5 V to 1.2 V across the parasitic 1 nH source inductance.
تعمیل کی معلومات
RoHS and REACH compliant per TI product declaration. SOIC-8 (D) MSL-3 matte-tin finish. UL 1577 (File E254607) basic isolation; VDE 0884-11 approved. Not AEC-Q100 qualified - for automotive onboard chargers use UCC21750-Q1 or UCC21530QDWKRQ1.
