2ED21844S06JXUMA1 vs 2ED21064S06JXUMA1 مقایسه
مقایسه دقیق کنار به کنار 2ED21844S06JXUMA1 توسط Infineon و 2ED21064S06JXUMA1 توسط Infineon. مشخصات کلیدی، پارامترهای الکتریکی، بسته‌بندی، وضعیت چرخه عمر، قیمت‌گذاری و موجودی را مقایسه کنید تا بهترین قطعه را برای نیازهای طراحی خود تعیین کنید.
مقایسه مشخصات
| پارامتر | 2ED21844S06JXUMA1 | 2ED21064S06JXUMA1 |
|---|---|---|
| برند | Infineon | Infineon |
| دسته‌بندی | Power MOSFET Drivers | Power MOSFET Drivers |
| وضعیت چرخه عمر | فعال | فعال |
| Driver Configuration | Half-Bridge | — |
| Number of Drivers | 2 (high-side + low-side) | — |
| Input Type | Non-Inverting | — |
| Blocking Voltage (Voffset) | 650 V | — |
| Output Current (Source/Sink) | 2.5 A typical | — |
| Bootstrap Diode | Integrated | Integrated |
| Supply Voltage (VCC) | 10 V to 20 V [DATA_NEEDED: exact range] | 10 V to 20 V |
| Propagation Delay (Typ.) | 200 ns [DATA_NEEDED: matching value] | — |
| Input Logic Compatibility | TTL/CMOS 3.3 V and 5 V | 3.3 V / 5 V CMOS |
| Undervoltage Lockout (UVLO) | Yes, both HS and LS rails | — |
| Shutdown Pin | Yes | — |
| Negative VS Transient Immunity | -100 V typical | — |
| محدوده دمای کاری | -40 C to +125 C | — |
| بسته‌بندی | PG-DSO-14-49 (DSO-14) | PG-DSO-14 (14-pin SOIC) |
| نوع نصب | Surface Mount | Surface Mount |
| سطح MSL | [DATA_NEEDED: MSL level] | [DATA_NEEDED: MSL level] |
| وضعیت RoHS | Compliant | ROHS3 Compliant |
| عملکرد | — | High-Side and Low-Side Gate Driver |
| Configuration | — | Half-Bridge (2 outputs, non-inverting) |
| توپولوژی | — | High-Side, Low-Side with integrated bootstrap diode |
| Maximum Offset / Boot Voltage | — | 650 V |
| Source Current (typical) | — | 0.29 A |
| Sink Current (typical) | — | 0.7 A |
| Rise Time (typical) | — | [DATA_NEEDED: rise time] |
| Fall Time (typical) | — | [DATA_NEEDED: fall time] |
| Propagation Delay (typical) | — | 100 ns |
| Channel-to-Channel Delay Match | — | [DATA_NEEDED: channel-to-channel delay match] |
| Under-Voltage Lockout | — | Yes (both channels) |
| دمای کاری | — | -40C to +125C |
| Negative Gate Drive Robustness | — | -0.7 V |