BSC094N06LS5ATMA1 vs BSZ096N10LS5ATMA1 مقایسه
مقایسه دقیق کنار به کنار BSC094N06LS5ATMA1 توسط Infineon و BSZ096N10LS5ATMA1 توسط Infineon. مشخصات کلیدی، پارامترهای الکتریکی، بسته‌بندی، وضعیت چرخه عمر، قیمت‌گذاری و موجودی را مقایسه کنید تا بهترین قطعه را برای نیازهای طراحی خود تعیین کنید.
Infineon
BSZ096N10LS5ATMA1 - 100V 9.6mΩ OptiMOS 5 N-Channel MOSFET | Infineon
BSZ096N10LS5ATMA1 ✓ فعالمقایسه مشخصات
| پارامتر | BSC094N06LS5ATMA1 | BSZ096N10LS5ATMA1 |
|---|---|---|
| برند | Infineon | Infineon |
| دسته‌بندی | MOSFETs | MOSFETs |
| وضعیت چرخه عمر | فعال | فعال |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Part Number | BSC094N06LS5ATMA1 | — |
| Technology | OptiMOS™ 5 (logic-level) | OptiMOS 5 trench MOSFET |
| FET Type | N-Channel | — |
| Drain-to-Source Voltage (VDS) | 60 V | — |
| Continuous Drain Current (ID) at TC=25°C | 47 A | — |
| Continuous Drain Current (ID) at TC=100°C | [DATA_NEEDED: ID at TC=100C] | — |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: IDM] | — |
| RDS(on) max at VGS=10 V | 9.4 mΩ | — |
| RDS(on) max at VGS=4.5 V | [DATA_NEEDED: RDS(on) at VGS=4.5V] | — |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th) typ/range] | — |
| Total Gate Charge (Qg) | [DATA_NEEDED: Qg typ] | — |
| Power Dissipation (PD) at TC=25°C | 36 W | — |
| دمای اتصال کاری | -55 °C to +150 °C | — |
| بسته‌بندی | PG-TDSON-8-6 (SuperSO8 5x6) | PG-TSDSON-8-FL (PQFN 3.3 x 3.3 mm) |
| نوع نصب | Surface Mount | Surface Mount |
| وضعیت RoHS | Compliant | Compliant |
| سطح MSL | [DATA_NEEDED: MSL level] | — |
| Product Family | — | OptiMOS 5 |
| Polarity | — | N-Channel |
| Drain-Source Voltage (VDS max) | — | 100 V |
| Gate-Source Voltage (VGS max) | — | 20 V (typical) |
| Continuous Drain Current (ID, TC=25 °C) | — | 40 A |
| Maximum Silicon Drain Current (ID max) | — | 62 A |
| Pulse Drain Current (ID,pulse) | — | 160 A |
| On-Resistance RDS(on) max | — | 9.6 mΩ at VGS=10 V |
| Total Power Dissipation (Ptot, TC=25 °C) | — | 69 W |
| Gate Threshold Voltage VGS(th) | — | Logic-level (low single-volt range) |
| Diode Continuous Forward Current (IS) | — | 40 A (TC=25 °C) |
| Diode Forward Voltage (VSD) | — | 0.85 V typ, 1.2 V max at IF=20 A |
| محدوده دمای کاری | — | -55 °C to +150 °C (junction) |
| Gate Drive | — | Logic-level compatible |
| ESD Protection | — | Yes (gate-integrated) |
| Packaging Code | — | ATMA1 (tape and reel) |