MT40A512M16TB-062E:R - 8Gb DDR4 SDRAM 3200MT/s | Micron
MPN: MT40A512M16TB-062E:R ✓ فعالMT40A512M16TB-062E:R نمای کلی
DDR4 SDRAM (Double Data Rate 4 Synchronous Dynamic Random-Access Memory) is a type of volatile memory that transfers data on both edges of the clock signal, effectively doubling the data rate. It is the fourth generation of DDR memory, succeeding DDR3, and offers higher speed, lower power consumption, and increased density. DDR4 is a critical component in modern computing systems, including servers, desktops, laptops, and embedded systems, where it serves as the main system memory.
Key features of the MT40A512M16TB-062E:R include a 1.2V pseudo open-drain I/O interface, on-die internal adjustable VREFDQ generation, and support for auto self-refresh, auto precharge, write leveling, CRC, dynamic on-chip termination, and ZQ calibration functions. The device has a CAS latency of 22 (CL=22) and a refresh time of 8192 cycles, with refresh intervals of 64ms at -40°C to 85°C, 32ms at >85°C to 95°C, and 16ms at >95°C.
This DDR4 SDRAM utilizes an 8n-prefetch architecture, which allows for high-speed data transfer by fetching 8 data words per clock cycle. The device supports a parallel interface with a 16-bit data bus, and the 96-ball FBGA package provides a compact footprint suitable for space-constrained designs. The memory is designed for reliable operation in commercial temperature environments, making it suitable for a wide range of applications.
Typical applications include servers, networking equipment, industrial computing, and high-performance embedded systems. The high data rate and low power consumption make it ideal for memory-intensive tasks such as data center workloads, real-time data processing, and advanced computing platforms.
When designing with this component, it is essential to follow DDR4 layout guidelines, including trace length matching and fly-by topology, to ensure signal integrity at 3200 MT/s. Proper decoupling and power integrity are also critical for reliable operation.
جایگزین‌های drop-in برای MT40A512M16TB-062E:R — همان پکیج، سازگار پین‌به‌پین. قطعات با پکیج متفاوت که نیاز به تغییر PCB دارند مستثنی هستند.
گونه‌ها در این سری
مدل‌های هم‌سری که جایگزین مستقیم هستند برای MT40A512M16TB-062E:R (همان فرم‌فاکتور و فوت‌پرینت) — متفاوت در Package, Data Rate, Memory Size, Clock Frequency, Interface.
K4B4G1646D-BYK00
برای قیمت تماس بگیرید
مشاهده دیتاشیت ←MT40A512M16TB-062E AIT:R
📋 جایگزین مرجع (خارج از کاتالوگ)
MT40A512M16TB-062E IT:R
📋 جایگزین مرجع (خارج از کاتالوگ)
MT40A512M16TD-062E:R
📋 جایگزین مرجع (خارج از کاتالوگ)
AS4C512M16D4B-62BCNTR
برای قیمت تماس بگیرید
مشاهده دیتاشیت ←MT40A512M16LY-062E IT:E
📋 جایگزین مرجع (خارج از کاتالوگ)
MT40A512M16TB-062E:R حداکثر مقادیر مجاز و مشخصات الکتریکی
| نوع حافظه | DDR4 SDRAM |
| اندازه حافظه | 8 Gbit (512M x 16) |
| نرخ داده | 3200 MT/s |
| Clock Frequency | 1600 MHz |
| تأخیر CAS | 22 |
| Supply Voltage (VDD/VDDQ) | 1.2V ±60mV |
| VPP Voltage | 2.5V (-125mV, +250mV) |
| دمای کاری | 0°C to +95°C |
| بسته‌بندی | 96-FBGA (7.5x13 mm) |
| رابط | Parallel |
| عرض گذرگاه داده | 16 bits |
| Refresh Time | 8192 cycles (64ms at -40°C to 85°C, 32ms at >85°C to 95°C, 16ms at >95°C) |
| I/O Type | 1.2V pseudo open-drain |
| ویژگی‌ها | Auto self-refresh, auto precharge, write leveling, CRC, dynamic on-chip termination, ZQ calibration |
| وضعیت RoHS | Compliant |
پیکربندی پین MT40A512M16TB-062E:R
| پین A1 | VDD — Power supply |
| پین A2 | DQ0 — Data input/output 0 |
| پین A3 | DQ1 — Data input/output 1 |
| پین A4 | VSS — Ground |
| پین A5 | DQ2 — Data input/output 2 |
| پین A6 | DQ3 — Data input/output 3 |
| پین A7 | VDDQ — I/O power supply |
| پین A8 | DQ4 — Data input/output 4 |
| پین A9 | DQ5 — Data input/output 5 |
| پین A10 | VSS — Ground |
| پین A11 | DQ6 — Data input/output 6 |
| پین A12 | DQ7 — Data input/output 7 |
کاربردهای معمول
MT40A512M16TB-062E:R مناسب است برای 6 کاربردs: Server Memory, Networking Equipment, Industrial Computing, High-Performance Embedded Systems, Data Center Storage, Telecommunications Infrastructure.
Server Memory
The MT40A512M16TB-062E:R is ideal for server memory modules (DIMMs) where high density and high data rates are critical. With 8Gb capacity and 3200 MT/s data rate, it supports demanding server workloads such as virtualization, cloud computing, and big data analytics. The low 1.2V supply voltage reduces power consumption, which is essential in data centers. Its 96-ball FBGA package allows for compact module designs, and the on-die termination and CRC features enhance signal integrity in multi-rank configurations.
پیشنهادی
Networking Equipment
In networking equipment such as routers, switches, and firewalls, the MT40A512M16TB-062E:R provides high-speed packet buffering and forwarding. The 3200 MT/s data rate ensures low latency for data processing, while the 8Gb capacity supports large routing tables and connection tracking. The device's auto self-refresh and write leveling features help maintain data integrity in high-throughput environments. Its commercial temperature range (0°C to +95°C) is suitable for indoor networking gear, and the compact FBGA package fits in space-constrained line cards.
پیشنهادی
Industrial Computing
The MT40A512M16TB-062E:R is well-suited for industrial PCs, embedded controllers, and edge computing devices that require reliable memory in harsh environments. With a commercial temperature range of 0°C to +95°C, it can operate in many industrial settings. The high data rate and low power consumption make it efficient for real-time data processing and control applications. The device's robust features, including CRC and dynamic on-chip termination, ensure reliable operation in electrically noisy industrial environments. Its 96-ball FBGA package is compatible with standard SMT assembly processes.
پیشنهادی
High-Performance Embedded Systems
For high-performance embedded systems such as advanced driver-assistance systems (ADAS), medical imaging, and military/aerospace computing, the MT40A512M16TB-062E:R offers the speed and capacity needed for complex algorithms. The 3200 MT/s data rate enables fast data throughput, while the 8Gb capacity supports large datasets. The device's low power consumption is beneficial for battery-powered or thermally constrained systems. Although the standard version is commercial temperature, the AIT variant is available for automotive applications. The FBGA package provides a small footprint for compact embedded boards.
پیشنهادی
Data Center Storage
In data center storage systems, the MT40A512M16TB-062E:R is used in storage controllers and SSDs for caching and metadata management. The high data rate and low latency are essential for fast I/O operations. The 8Gb capacity allows for large cache pools, improving read/write performance. The device's low power consumption helps reduce overall data center energy costs. Its commercial temperature range is suitable for controlled data center environments, and the FBGA package enables high-density memory arrays on controller boards.
پیشنهادی
Telecommunications Infrastructure
The MT40A512M16TB-062E:R is used in telecommunications infrastructure such as base stations, switches, and signal processing units. The high data rate supports high-bandwidth communication protocols, while the 8Gb capacity handles large buffers for voice, video, and data traffic. The device's features like write leveling and dynamic on-chip termination ensure signal integrity in high-speed digital designs. Its commercial temperature range is appropriate for indoor telecom equipment, and the compact FBGA package is ideal for dense line cards and processing modules.
پیشنهادی
خلاصه محصولات پیشنهادی
داده‌های مرجع مهندسی برای MT40A512M16TB-062E:R — مقایسه، راهنمای طراحی و اطلاعات انطباق.
راهنمای انتخاب
مقایسه با جایگزین‌ها
| پارامتر | این محصول | MT40A512M16TB-062E AIT | MT40A512M16TB-062E IT | MT40A512M16TD-062E | AS4C512M16D4B-62BCN |
|---|---|---|---|---|---|
| Package | 96-FBGA (7.5x13 mm) | R: 96-FBGA (7.5x13 mm) | R: 96-FBGA (7.5x13 mm) | R: 96-FBGA (7.5x13 mm) | 96-FBGA (7.5x13 mm) |
| Brand | Micron Technology | R: Micron Technology | R: Micron Technology | R: Alliance Memory | Alliance Memory |
| Memory Size | 8 Gbit | R: 8 Gbit | R: 8 Gbit | R: 8 Gbit | 8 Gbit |
| Data Rate | 3200 MT/s | R: 3200 MT/s | R: 3200 MT/s | R: 3200 MT/s | 3200 MT/s |
| Operating Temperature | 0°C to +95°C | R: -40°C to +125°C | R: -40°C to +95°C | R: 0°C to +95°C | 0°C to +95°C |
| Supply Voltage | 1.2V | R: 1.2V | R: 1.2V | R: 1.2V | 1.2V |
| CAS Latency | 22 | R: 22 | R: 22 | R: 22 | 22 |
| Automotive Grade | No | R: Yes | R: No | R: No | No |
تفاوت‌های کلیدی
- High data rate of 3200 MT/s (در مقابلMT41K256M16HA-125:E)
- 8Gb density in a 96-ball FBGA (در مقابلK4B4G1646D-BYK0)
- Automotive variant available (در مقابلAS4C512M16D4B-62BCN)
یادداشت‌های طراحی
For DDR4-3200 operation, follow Micron's layout guidelines: ensure trace length matching for DQ, DQS, and address/command signals. Use fly-by topology for address/command and control signals to reduce signal integrity issues. Maintain 50-ohm single-ended impedance and 100-ohm differential impedance for DQS pairs. Keep the memory controller and DRAM as close as possible to minimize trace lengths.
Decouple VDD and VDDQ with 0.1uF and 1uF ceramic capacitors placed close to each power pin. Use a solid power plane for VDD and VDDQ to minimize impedance. The VPP supply (2.5V) should be decoupled with a 1uF capacitor. Ensure the power supply can handle the peak current during refresh and active operations.
The MT40A512M16TB-062E:R operates up to +95°C. Ensure adequate airflow or heatsinking in high-temperature environments. The FBGA package has a thermal resistance that should be considered; refer to the datasheet for theta_JA values. For high-density modules, consider thermal simulation to ensure junction temperature stays within limits.
اطلاعات انطباق
RoHS compliant per distributor listings. Not AEC-Q100 qualified; automotive variant available.
