1EBN1001AEXUMA1 vs 2ED21064S06JXUMA1 Comparaison
Comparaison détaillée côte à côte de 1EBN1001AEXUMA1 par Infineon et 2ED21064S06JXUMA1 par Infineon. Comparez les spécifications clés, les paramètres électriques, le conditionnement, le statut de cycle de vie, les prix et la disponibilité pour déterminer le meilleur composant pour vos exigences de conception.
Infineon
1EBN1001AEXUMA1 - 15A Isolated Gate Driver Booster | Infineon EiceDRIVER™
1EBN1001AEXUMA1 ✓ ActifComparaison des spécifications
| Paramètre | 1EBN1001AEXUMA1 | 2ED21064S06JXUMA1 |
|---|---|---|
| Marque | Infineon | Infineon |
| Catégorie | Power MOSFET Drivers | Power MOSFET Drivers |
| Statut du cycle de vie | Actif | Actif |
| Statut du stock | In Stock | In Stock |
| Prix unitaire (USD) | $4,41 | $0,85 |
| Product Type | Isolated single-channel IGBT/MOSFET gate driver booster | — |
| Series | EiceDRIVER™ Boost (1EBN family) | — |
| Configuration | High-Side / Low-Side (non-inverting booster) | Half-Bridge (2 outputs, non-inverting) |
| Nombre de sorties | 2 (separate source and sink paths) | — |
| Peak Output Current | ±15 A | — |
| Number of Drivers | 1 | — |
| Input Signal | ASC input, active-clamping disable | — |
| Active Clamping | Yes (very fast reaction time) | — |
| Boîtier | PG-DSO-14-43 (DSO EP, 14-pin, Tape & Reel) | PG-DSO-14 (14-pin SOIC) |
| Type de montage | Surface Mount | Surface Mount |
| Température de fonctionnement | -40 °C to +125 °C (automotive grade) | -40C to +125C |
| Automotive Qualification | AEC-Q100 qualified | — |
| Niveau MSL | [DATA_NEEDED: MSL level] | [DATA_NEEDED: MSL level] |
| Statut RoHS | Compliant | ROHS3 Compliant |
| Target Switching Stage | Motor drives > 10 kW (up to 400 A modules) | — |
| Fonction | — | High-Side and Low-Side Gate Driver |
| Topologie | — | High-Side, Low-Side with integrated bootstrap diode |
| Maximum Offset / Boot Voltage | — | 650 V |
| Supply Voltage (VCC) | — | 10 V to 20 V |
| Source Current (typical) | — | 0.29 A |
| Sink Current (typical) | — | 0.7 A |
| Rise Time (typical) | — | [DATA_NEEDED: rise time] |
| Fall Time (typical) | — | [DATA_NEEDED: fall time] |
| Propagation Delay (typical) | — | 100 ns |
| Channel-to-Channel Delay Match | — | [DATA_NEEDED: channel-to-channel delay match] |
| Under-Voltage Lockout | — | Yes (both channels) |
| Bootstrap Diode | — | Integrated |
| Input Logic Compatibility | — | 3.3 V / 5 V CMOS |
| Negative Gate Drive Robustness | — | -0.7 V |