1EBN1001AEXUMA1 vs 2ED21064S06JXUMA1 Vergleich
Detaillierter Direktvergleich von 1EBN1001AEXUMA1 von Infineon und 2ED21064S06JXUMA1 von Infineon. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.
Infineon
1EBN1001AEXUMA1 - 15A Isolated Gate Driver Booster | Infineon EiceDRIVER™
1EBN1001AEXUMA1 ✓ AktivSpezifikationsvergleich
| Parameter | 1EBN1001AEXUMA1 | 2ED21064S06JXUMA1 |
|---|---|---|
| Marke | Infineon | Infineon |
| Kategorie | Power MOSFET Drivers | Power MOSFET Drivers |
| Lebenszyklusstatus | Aktiv | Aktiv |
| Lagerstatus | In Stock | In Stock |
| Stückpreis (USD) | $4,41 | $0,85 |
| Product Type | Isolated single-channel IGBT/MOSFET gate driver booster | — |
| Series | EiceDRIVER™ Boost (1EBN family) | — |
| Configuration | High-Side / Low-Side (non-inverting booster) | Half-Bridge (2 outputs, non-inverting) |
| Anzahl der Ausgänge | 2 (separate source and sink paths) | — |
| Peak Output Current | ±15 A | — |
| Number of Drivers | 1 | — |
| Input Signal | ASC input, active-clamping disable | — |
| Active Clamping | Yes (very fast reaction time) | — |
| Gehäuse | PG-DSO-14-43 (DSO EP, 14-pin, Tape & Reel) | PG-DSO-14 (14-pin SOIC) |
| Montageart | Surface Mount | Surface Mount |
| Betriebstemperatur | -40 °C to +125 °C (automotive grade) | -40C to +125C |
| Automotive Qualification | AEC-Q100 qualified | — |
| MSL-Level | [DATA_NEEDED: MSL level] | [DATA_NEEDED: MSL level] |
| RoHS-Status | Compliant | ROHS3 Compliant |
| Target Switching Stage | Motor drives > 10 kW (up to 400 A modules) | — |
| Funktion | — | High-Side and Low-Side Gate Driver |
| Topologie | — | High-Side, Low-Side with integrated bootstrap diode |
| Maximum Offset / Boot Voltage | — | 650 V |
| Supply Voltage (VCC) | — | 10 V to 20 V |
| Source Current (typical) | — | 0.29 A |
| Sink Current (typical) | — | 0.7 A |
| Rise Time (typical) | — | [DATA_NEEDED: rise time] |
| Fall Time (typical) | — | [DATA_NEEDED: fall time] |
| Propagation Delay (typical) | — | 100 ns |
| Channel-to-Channel Delay Match | — | [DATA_NEEDED: channel-to-channel delay match] |
| Under-Voltage Lockout | — | Yes (both channels) |
| Bootstrap Diode | — | Integrated |
| Input Logic Compatibility | — | 3.3 V / 5 V CMOS |
| Negative Gate Drive Robustness | — | -0.7 V |