1EBN1001AEXUMA1 vs 2ED21064S06JXUMA1 Comparação
Comparação detalhada lado a lado de 1EBN1001AEXUMA1 por Infineon e 2ED21064S06JXUMA1 por Infineon. Compare especificações principais, parâmetros elétricos, encapsulamento, status do ciclo de vida, preços e disponibilidade para determinar o melhor componente para os requisitos do seu projeto.
Infineon
1EBN1001AEXUMA1 - 15A Isolated Gate Driver Booster | Infineon EiceDRIVER™
1EBN1001AEXUMA1 ✓ AtivoComparação de especificações
| Parâmetro | 1EBN1001AEXUMA1 | 2ED21064S06JXUMA1 |
|---|---|---|
| Marca | Infineon | Infineon |
| Categoria | Power MOSFET Drivers | Power MOSFET Drivers |
| Status do ciclo de vida | Ativo | Ativo |
| Status do estoque | In Stock | In Stock |
| Preço unitário (USD) | $4,41 | $0,85 |
| Product Type | Isolated single-channel IGBT/MOSFET gate driver booster | — |
| Series | EiceDRIVER™ Boost (1EBN family) | — |
| Configuration | High-Side / Low-Side (non-inverting booster) | Half-Bridge (2 outputs, non-inverting) |
| Número de saídas | 2 (separate source and sink paths) | — |
| Peak Output Current | ±15 A | — |
| Number of Drivers | 1 | — |
| Input Signal | ASC input, active-clamping disable | — |
| Active Clamping | Yes (very fast reaction time) | — |
| Encapsulamento | PG-DSO-14-43 (DSO EP, 14-pin, Tape & Reel) | PG-DSO-14 (14-pin SOIC) |
| Tipo de montagem | Surface Mount | Surface Mount |
| Temperatura de operação | -40 °C to +125 °C (automotive grade) | -40C to +125C |
| Automotive Qualification | AEC-Q100 qualified | — |
| Nível MSL | [DATA_NEEDED: MSL level] | [DATA_NEEDED: MSL level] |
| Status RoHS | Compliant | ROHS3 Compliant |
| Target Switching Stage | Motor drives > 10 kW (up to 400 A modules) | — |
| Função | — | High-Side and Low-Side Gate Driver |
| Topologia | — | High-Side, Low-Side with integrated bootstrap diode |
| Maximum Offset / Boot Voltage | — | 650 V |
| Supply Voltage (VCC) | — | 10 V to 20 V |
| Source Current (typical) | — | 0.29 A |
| Sink Current (typical) | — | 0.7 A |
| Rise Time (typical) | — | [DATA_NEEDED: rise time] |
| Fall Time (typical) | — | [DATA_NEEDED: fall time] |
| Propagation Delay (typical) | — | 100 ns |
| Channel-to-Channel Delay Match | — | [DATA_NEEDED: channel-to-channel delay match] |
| Under-Voltage Lockout | — | Yes (both channels) |
| Bootstrap Diode | — | Integrated |
| Input Logic Compatibility | — | 3.3 V / 5 V CMOS |
| Negative Gate Drive Robustness | — | -0.7 V |